CURRENT-VOLTAGE CHARACTERISTICS OF AN AlGaAs/GaAs HETEROSTRUCTURE FET FOR HIGH GATE VOLTAGES.

M. Hirano, Y. Takanashi, T. Sugeta

Research output: Contribution to journalArticle

4 Citations (Scopus)

Abstract

Drain-to-source current for high gate voltages in AlGaAs/GaAs heterostructure FET's (HFET's) is found to depend on the electron saturation velocity in the AlGaAs layer. A simple model, which takes into account the current through the undepleted channel in the AlGaAs layer as a function of the electron saturation velocity in AlGaAs, is proposed for describing I-V characteristics of HFET's for high gate voltages. Using the model, effective electron saturation velocity in Al//xGa//1// minus //xAs for different Al content levels has been obtained from the analysis of the present experimental results.

Original languageEnglish
Pages (from-to)496-499
Number of pages4
JournalElectron device letters
VolumeEDL-5
Issue number11
Publication statusPublished - 1984 Nov
Externally publishedYes

Fingerprint

Current voltage characteristics
Field effect transistors
Heterojunctions
Electrons
Electric potential
gallium arsenide

ASJC Scopus subject areas

  • Engineering(all)

Cite this

CURRENT-VOLTAGE CHARACTERISTICS OF AN AlGaAs/GaAs HETEROSTRUCTURE FET FOR HIGH GATE VOLTAGES. / Hirano, M.; Takanashi, Y.; Sugeta, T.

In: Electron device letters, Vol. EDL-5, No. 11, 11.1984, p. 496-499.

Research output: Contribution to journalArticle

Hirano, M, Takanashi, Y & Sugeta, T 1984, 'CURRENT-VOLTAGE CHARACTERISTICS OF AN AlGaAs/GaAs HETEROSTRUCTURE FET FOR HIGH GATE VOLTAGES.', Electron device letters, vol. EDL-5, no. 11, pp. 496-499.
Hirano, M. ; Takanashi, Y. ; Sugeta, T. / CURRENT-VOLTAGE CHARACTERISTICS OF AN AlGaAs/GaAs HETEROSTRUCTURE FET FOR HIGH GATE VOLTAGES. In: Electron device letters. 1984 ; Vol. EDL-5, No. 11. pp. 496-499.
@article{c9c22fa1b0374a7aa36cbc7400b56f6d,
title = "CURRENT-VOLTAGE CHARACTERISTICS OF AN AlGaAs/GaAs HETEROSTRUCTURE FET FOR HIGH GATE VOLTAGES.",
abstract = "Drain-to-source current for high gate voltages in AlGaAs/GaAs heterostructure FET's (HFET's) is found to depend on the electron saturation velocity in the AlGaAs layer. A simple model, which takes into account the current through the undepleted channel in the AlGaAs layer as a function of the electron saturation velocity in AlGaAs, is proposed for describing I-V characteristics of HFET's for high gate voltages. Using the model, effective electron saturation velocity in Al//xGa//1// minus //xAs for different Al content levels has been obtained from the analysis of the present experimental results.",
author = "M. Hirano and Y. Takanashi and T. Sugeta",
year = "1984",
month = "11",
language = "English",
volume = "EDL-5",
pages = "496--499",
journal = "IEEE Electron Device Letters",
issn = "0741-3106",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
number = "11",

}

TY - JOUR

T1 - CURRENT-VOLTAGE CHARACTERISTICS OF AN AlGaAs/GaAs HETEROSTRUCTURE FET FOR HIGH GATE VOLTAGES.

AU - Hirano, M.

AU - Takanashi, Y.

AU - Sugeta, T.

PY - 1984/11

Y1 - 1984/11

N2 - Drain-to-source current for high gate voltages in AlGaAs/GaAs heterostructure FET's (HFET's) is found to depend on the electron saturation velocity in the AlGaAs layer. A simple model, which takes into account the current through the undepleted channel in the AlGaAs layer as a function of the electron saturation velocity in AlGaAs, is proposed for describing I-V characteristics of HFET's for high gate voltages. Using the model, effective electron saturation velocity in Al//xGa//1// minus //xAs for different Al content levels has been obtained from the analysis of the present experimental results.

AB - Drain-to-source current for high gate voltages in AlGaAs/GaAs heterostructure FET's (HFET's) is found to depend on the electron saturation velocity in the AlGaAs layer. A simple model, which takes into account the current through the undepleted channel in the AlGaAs layer as a function of the electron saturation velocity in AlGaAs, is proposed for describing I-V characteristics of HFET's for high gate voltages. Using the model, effective electron saturation velocity in Al//xGa//1// minus //xAs for different Al content levels has been obtained from the analysis of the present experimental results.

UR - http://www.scopus.com/inward/record.url?scp=0021522248&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0021522248&partnerID=8YFLogxK

M3 - Article

AN - SCOPUS:0021522248

VL - EDL-5

SP - 496

EP - 499

JO - IEEE Electron Device Letters

JF - IEEE Electron Device Letters

SN - 0741-3106

IS - 11

ER -