TY - JOUR
T1 - Current-Voltage Characteristics of an AlGaAs/GaAs Heterostructure FET for High Gate Voltages
AU - Hirano, M.
AU - Takanashi, Y.
AU - Sugeta, T.
N1 - Copyright:
Copyright 2015 Elsevier B.V., All rights reserved.
PY - 1984/11
Y1 - 1984/11
N2 - Drain-to-source current for high gate voltages in AlGaAs/GaAs heterostructure FET's (HFET's) is found to depend on the electron saturation velocity in the AlGaAs layer. A simple model, which takes into account the current through the undepleted channel in the AlGaAs layer as a function of the electron saturation velocity in AlGaAs, is proposed for describing I-V characteristics of HFET's for high gate voltages. Using the model, effective electron saturation velocity in AlxGa1_xAs for different Al content levels has been obtained from the analysis of the present experimental results; 7 × 106 cm/s for x = 0.24 and 3 × 106 cm/s for x = 0.3 at a 4 × 1017 cm-3 doping concentration.
AB - Drain-to-source current for high gate voltages in AlGaAs/GaAs heterostructure FET's (HFET's) is found to depend on the electron saturation velocity in the AlGaAs layer. A simple model, which takes into account the current through the undepleted channel in the AlGaAs layer as a function of the electron saturation velocity in AlGaAs, is proposed for describing I-V characteristics of HFET's for high gate voltages. Using the model, effective electron saturation velocity in AlxGa1_xAs for different Al content levels has been obtained from the analysis of the present experimental results; 7 × 106 cm/s for x = 0.24 and 3 × 106 cm/s for x = 0.3 at a 4 × 1017 cm-3 doping concentration.
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U2 - 10.1109/EDL.1984.26001
DO - 10.1109/EDL.1984.26001
M3 - Article
AN - SCOPUS:0021522248
SN - 0741-3106
VL - 5
SP - 496
EP - 499
JO - IEEE Electron Device Letters
JF - IEEE Electron Device Letters
IS - 11
ER -