Current-Voltage Characteristics of an AlGaAs/GaAs Heterostructure FET for High Gate Voltages

Makoto Hirano

    Research output: Contribution to journal › Article

    4 Citations (Scopus)
    Original languageEnglish
    Pages (from-to)496-499
    JournalElectron device letters
    VolumeEDL-5
    Publication statusPublished - 1984 Nov 1

    Cite this

    Current-Voltage Characteristics of an AlGaAs/GaAs Heterostructure FET for High Gate Voltages. / Hirano, Makoto.

    In: Electron device letters, Vol. EDL-5, 01.11.1984, p. 496-499.

    Research output: Contribution to journal › Article

    Hirano, M 1984, 'Current-Voltage Characteristics of an AlGaAs/GaAs Heterostructure FET for High Gate Voltages', Electron device letters, vol. EDL-5, pp. 496-499.
    Hirano M. Current-Voltage Characteristics of an AlGaAs/GaAs Heterostructure FET for High Gate Voltages. Electron device letters. 1984 Nov 1;EDL-5:496-499.
    Hirano, Makoto. / Current-Voltage Characteristics of an AlGaAs/GaAs Heterostructure FET for High Gate Voltages. In: Electron device letters. 1984 ; Vol. EDL-5. pp. 496-499.
    @article{6706e1d491c74ad7afcd49683529fb2d,
    title = "Current-Voltage Characteristics of an AlGaAs/GaAs Heterostructure FET for High Gate Voltages",
    author = "Makoto Hirano",
    year = "1984",
    month = "11",
    day = "1",
    language = "English",
    volume = "EDL-5",
    pages = "496--499",
    journal = "IEEE Electron Device Letters",
    issn = "0741-3106",
    publisher = "Institute of Electrical and Electronics Engineers Inc.",

    }

    TY - JOUR

    T1 - Current-Voltage Characteristics of an AlGaAs/GaAs Heterostructure FET for High Gate Voltages

    AU - Hirano, Makoto

    PY - 1984/11/1

    Y1 - 1984/11/1

    M3 - Article

    VL - EDL-5

    SP - 496

    EP - 499

    JO - IEEE Electron Device Letters

    JF - IEEE Electron Device Letters

    SN - 0741-3106

    ER -