Original language | English |
---|---|
Pages (from-to) | 496-499 |
Journal | Electron device letters |
Volume | EDL-5 |
Publication status | Published - 1984 Nov 1 |
Cite this
Hirano, M. (1984). Current-Voltage Characteristics of an AlGaAs/GaAs Heterostructure FET for High Gate Voltages. Electron device letters, EDL-5, 496-499.
Current-Voltage Characteristics of an AlGaAs/GaAs Heterostructure FET for High Gate Voltages. / Hirano, Makoto.
In: Electron device letters, Vol. EDL-5, 01.11.1984, p. 496-499.Research output: Contribution to journal › Article
Hirano, M 1984, 'Current-Voltage Characteristics of an AlGaAs/GaAs Heterostructure FET for High Gate Voltages', Electron device letters, vol. EDL-5, pp. 496-499.
Hirano M. Current-Voltage Characteristics of an AlGaAs/GaAs Heterostructure FET for High Gate Voltages. Electron device letters. 1984 Nov 1;EDL-5:496-499.
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title = "Current-Voltage Characteristics of an AlGaAs/GaAs Heterostructure FET for High Gate Voltages",
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T1 - Current-Voltage Characteristics of an AlGaAs/GaAs Heterostructure FET for High Gate Voltages
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VL - EDL-5
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JO - IEEE Electron Device Letters
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