DC Characteristics in High-Quality AlGaN/AlN/ High-Electron-Mobility Transistors Grown on AlN/Sapphire Templates

M. Miyoshi, A. Imanishi, T. Egawa, H. Ishikawa, K. Asai, T. Shibata, O. Oda

Research output: Contribution to journal › Article › peer-review

Cite this

@article{00ccf68b8ade4610aa08faac433e6dc5,

title = "DC Characteristics in High-Quality AlGaN/AlN/ High-Electron-Mobility Transistors Grown on AlN/Sapphire Templates",

author = "M. Miyoshi and A. Imanishi and T. Egawa and H. Ishikawa and K. Asai and T. Shibata and O. Oda",

year = "2005",

month = sep,

day = "1",

language = "English",

volume = "Vol. 44",

pages = "6490--6493",

journal = "Jpn. J. Appl. Phys.",

}

TY - JOUR

T1 - DC Characteristics in High-Quality AlGaN/AlN/ High-Electron-Mobility Transistors Grown on AlN/Sapphire Templates

AU - Miyoshi, M.

AU - Imanishi, A.

AU - Egawa, T.

AU - Ishikawa, H.

AU - Asai, K.

AU - Shibata, T.

AU - Oda, O.

PY - 2005/9/1

Y1 - 2005/9/1

M3 - Article

VL - Vol. 44

SP - 6490

EP - 6493

JO - Jpn. J. Appl. Phys.

JF - Jpn. J. Appl. Phys.

ER -