DC Characteristics in High-Quality AlGaN/AlN/ High-Electron-Mobility Transistors Grown on AlN/Sapphire Templates

M. Miyoshi, A. Imanishi, T. Egawa, H. Ishikawa, K. Asai, T. Shibata, O. Oda

Research output: Contribution to journalArticle

24 Citations (Scopus)
Original languageEnglish
Pages (from-to)6490-6493
JournalJpn. J. Appl. Phys.
VolumeVol. 44
Publication statusPublished - 2005 Sep 1

Cite this

Miyoshi, M., Imanishi, A., Egawa, T., Ishikawa, H., Asai, K., Shibata, T., & Oda, O. (2005). DC Characteristics in High-Quality AlGaN/AlN/ High-Electron-Mobility Transistors Grown on AlN/Sapphire Templates. Jpn. J. Appl. Phys., Vol. 44, 6490-6493.

DC Characteristics in High-Quality AlGaN/AlN/ High-Electron-Mobility Transistors Grown on AlN/Sapphire Templates. / Miyoshi, M.; Imanishi, A.; Egawa, T.; Ishikawa, H.; Asai, K.; Shibata, T.; Oda, O.

In: Jpn. J. Appl. Phys., Vol. Vol. 44, 01.09.2005, p. 6490-6493.

Research output: Contribution to journalArticle

Miyoshi, M, Imanishi, A, Egawa, T, Ishikawa, H, Asai, K, Shibata, T & Oda, O 2005, 'DC Characteristics in High-Quality AlGaN/AlN/ High-Electron-Mobility Transistors Grown on AlN/Sapphire Templates', Jpn. J. Appl. Phys., vol. Vol. 44, pp. 6490-6493.
Miyoshi, M. ; Imanishi, A. ; Egawa, T. ; Ishikawa, H. ; Asai, K. ; Shibata, T. ; Oda, O. / DC Characteristics in High-Quality AlGaN/AlN/ High-Electron-Mobility Transistors Grown on AlN/Sapphire Templates. In: Jpn. J. Appl. Phys. 2005 ; Vol. Vol. 44. pp. 6490-6493.
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