| Original language | English |
|---|---|
| Pages (from-to) | 6490-6493 |
| Journal | Jpn. J. Appl. Phys. |
| Volume | Vol. 44 |
| Publication status | Published - 2005 Sep 1 |
Cite this
Miyoshi, M., Imanishi, A., Egawa, T., Ishikawa, H., Asai, K., Shibata, T., & Oda, O. (2005). DC Characteristics in High-Quality AlGaN/AlN/ High-Electron-Mobility Transistors Grown on AlN/Sapphire Templates. Jpn. J. Appl. Phys., Vol. 44, 6490-6493.
DC Characteristics in High-Quality AlGaN/AlN/ High-Electron-Mobility Transistors Grown on AlN/Sapphire Templates. / Miyoshi, M.; Imanishi, A.; Egawa, T.; Ishikawa, H.; Asai, K.; Shibata, T.; Oda, O.
In: Jpn. J. Appl. Phys., Vol. Vol. 44, 01.09.2005, p. 6490-6493.Research output: Contribution to journal › Article
Miyoshi, M, Imanishi, A, Egawa, T, Ishikawa, H, Asai, K, Shibata, T & Oda, O 2005, 'DC Characteristics in High-Quality AlGaN/AlN/ High-Electron-Mobility Transistors Grown on AlN/Sapphire Templates', Jpn. J. Appl. Phys., vol. Vol. 44, pp. 6490-6493.
Miyoshi M, Imanishi A, Egawa T, Ishikawa H, Asai K, Shibata T et al. DC Characteristics in High-Quality AlGaN/AlN/ High-Electron-Mobility Transistors Grown on AlN/Sapphire Templates. Jpn. J. Appl. Phys. 2005 Sep 1;Vol. 44:6490-6493.
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