DC Characteristics in High-Quality AlGaN/AlN/ High-Electron-Mobility Transistors Grown on AlN/Sapphire Templates

M. Miyoshi, A. Imanishi, T. Egawa, H. Ishikawa, K. Asai, T. Shibata, O. Oda

Research output: Contribution to journalArticle

24 Citations (Scopus)
Original languageEnglish
Pages (from-to)6490-6493
JournalJpn. J. Appl. Phys.
VolumeVol. 44
Publication statusPublished - 2005 Sep 1

Cite this

Miyoshi, M., Imanishi, A., Egawa, T., Ishikawa, H., Asai, K., Shibata, T., & Oda, O. (2005). DC Characteristics in High-Quality AlGaN/AlN/ High-Electron-Mobility Transistors Grown on AlN/Sapphire Templates. Jpn. J. Appl. Phys., Vol. 44, 6490-6493.