DC characteristics in high-quality AlGaN/AlN/GaN high-electron-mobility transistors grown on AIN/sapphire templates

Makoto Miyoshi, Atsushi Imanishi, Takashi Egawa, Hiroyasu Ishikawa, Kei Ichiro Asai, Tomohiko Shibata, Mitsuhiro Tanaka, Osamu Oda

Research output: Contribution to journalArticle

24 Citations (Scopus)

Abstract

High-crystal-quality Al0.26Ga0.74N/AlN/GaN structures with a very high mobility, such as over 2100cm2/(V s) with a two-dimensional-electron gas (2DEG) density of approximately 1 × 10 13/cm2, were grown on epitaxial AIN/sapphire templates by metalorganic vapor phase epitaxy and adopted for the fabrication of high-electron-mobility transistors (HEMTs). The fabricated devices showed good DC characteristics compared with those in conventional AlGaN/GaN HEMTs and in devices grown on sapphire substrates. Also, it was confirmed that further improvements in DC characteristics are achieved by applying recessed ohmic contacts to AlGaN/AlN/GaN HEMTs. A high extrinsic transconductance of approximately 220mS/mm and a high drain current density of over 1 A/mm with a threshold voltage of -4.08 V were obtained for 1,5-μm-gate-length recessed ohmic AlGaN/AlN/GaN HEMTs on AIN/sapphire templates. In addition, it was found that the gate leakage current of HEMTs can be suppressed by using epitaxial AIN/sapphire templates as substrates.

Original languageEnglish
Pages (from-to)6490-6494
Number of pages5
JournalJapanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
Volume44
Issue number9 A
DOIs
Publication statusPublished - 2005 Sep 8
Externally publishedYes

Fingerprint

High electron mobility transistors
high electron mobility transistors
Sapphire
sapphire
templates
direct current
Two dimensional electron gas
Metallorganic vapor phase epitaxy
Ohmic contacts
Drain current
Transconductance
gas density
transconductance
Substrates
Threshold voltage
vapor phase epitaxy
Leakage currents
threshold voltage
electron gas
high current

Keywords

  • AIGaN/AIN/GaN
  • AIN/sapphire template
  • HEMT
  • Recessed ohmic

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Cite this

DC characteristics in high-quality AlGaN/AlN/GaN high-electron-mobility transistors grown on AIN/sapphire templates. / Miyoshi, Makoto; Imanishi, Atsushi; Egawa, Takashi; Ishikawa, Hiroyasu; Asai, Kei Ichiro; Shibata, Tomohiko; Tanaka, Mitsuhiro; Oda, Osamu.

In: Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, Vol. 44, No. 9 A, 08.09.2005, p. 6490-6494.

Research output: Contribution to journalArticle

Miyoshi, Makoto ; Imanishi, Atsushi ; Egawa, Takashi ; Ishikawa, Hiroyasu ; Asai, Kei Ichiro ; Shibata, Tomohiko ; Tanaka, Mitsuhiro ; Oda, Osamu. / DC characteristics in high-quality AlGaN/AlN/GaN high-electron-mobility transistors grown on AIN/sapphire templates. In: Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers. 2005 ; Vol. 44, No. 9 A. pp. 6490-6494.
@article{d148ec7d7e204a9888adebae14bb7bc4,
title = "DC characteristics in high-quality AlGaN/AlN/GaN high-electron-mobility transistors grown on AIN/sapphire templates",
abstract = "High-crystal-quality Al0.26Ga0.74N/AlN/GaN structures with a very high mobility, such as over 2100cm2/(V s) with a two-dimensional-electron gas (2DEG) density of approximately 1 × 10 13/cm2, were grown on epitaxial AIN/sapphire templates by metalorganic vapor phase epitaxy and adopted for the fabrication of high-electron-mobility transistors (HEMTs). The fabricated devices showed good DC characteristics compared with those in conventional AlGaN/GaN HEMTs and in devices grown on sapphire substrates. Also, it was confirmed that further improvements in DC characteristics are achieved by applying recessed ohmic contacts to AlGaN/AlN/GaN HEMTs. A high extrinsic transconductance of approximately 220mS/mm and a high drain current density of over 1 A/mm with a threshold voltage of -4.08 V were obtained for 1,5-μm-gate-length recessed ohmic AlGaN/AlN/GaN HEMTs on AIN/sapphire templates. In addition, it was found that the gate leakage current of HEMTs can be suppressed by using epitaxial AIN/sapphire templates as substrates.",
keywords = "AIGaN/AIN/GaN, AIN/sapphire template, HEMT, Recessed ohmic",
author = "Makoto Miyoshi and Atsushi Imanishi and Takashi Egawa and Hiroyasu Ishikawa and Asai, {Kei Ichiro} and Tomohiko Shibata and Mitsuhiro Tanaka and Osamu Oda",
year = "2005",
month = "9",
day = "8",
doi = "10.1143/JJAP.44.6490",
language = "English",
volume = "44",
pages = "6490--6494",
journal = "Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes",
issn = "0021-4922",
publisher = "Japan Society of Applied Physics",
number = "9 A",

}

TY - JOUR

T1 - DC characteristics in high-quality AlGaN/AlN/GaN high-electron-mobility transistors grown on AIN/sapphire templates

AU - Miyoshi, Makoto

AU - Imanishi, Atsushi

AU - Egawa, Takashi

AU - Ishikawa, Hiroyasu

AU - Asai, Kei Ichiro

AU - Shibata, Tomohiko

AU - Tanaka, Mitsuhiro

AU - Oda, Osamu

PY - 2005/9/8

Y1 - 2005/9/8

N2 - High-crystal-quality Al0.26Ga0.74N/AlN/GaN structures with a very high mobility, such as over 2100cm2/(V s) with a two-dimensional-electron gas (2DEG) density of approximately 1 × 10 13/cm2, were grown on epitaxial AIN/sapphire templates by metalorganic vapor phase epitaxy and adopted for the fabrication of high-electron-mobility transistors (HEMTs). The fabricated devices showed good DC characteristics compared with those in conventional AlGaN/GaN HEMTs and in devices grown on sapphire substrates. Also, it was confirmed that further improvements in DC characteristics are achieved by applying recessed ohmic contacts to AlGaN/AlN/GaN HEMTs. A high extrinsic transconductance of approximately 220mS/mm and a high drain current density of over 1 A/mm with a threshold voltage of -4.08 V were obtained for 1,5-μm-gate-length recessed ohmic AlGaN/AlN/GaN HEMTs on AIN/sapphire templates. In addition, it was found that the gate leakage current of HEMTs can be suppressed by using epitaxial AIN/sapphire templates as substrates.

AB - High-crystal-quality Al0.26Ga0.74N/AlN/GaN structures with a very high mobility, such as over 2100cm2/(V s) with a two-dimensional-electron gas (2DEG) density of approximately 1 × 10 13/cm2, were grown on epitaxial AIN/sapphire templates by metalorganic vapor phase epitaxy and adopted for the fabrication of high-electron-mobility transistors (HEMTs). The fabricated devices showed good DC characteristics compared with those in conventional AlGaN/GaN HEMTs and in devices grown on sapphire substrates. Also, it was confirmed that further improvements in DC characteristics are achieved by applying recessed ohmic contacts to AlGaN/AlN/GaN HEMTs. A high extrinsic transconductance of approximately 220mS/mm and a high drain current density of over 1 A/mm with a threshold voltage of -4.08 V were obtained for 1,5-μm-gate-length recessed ohmic AlGaN/AlN/GaN HEMTs on AIN/sapphire templates. In addition, it was found that the gate leakage current of HEMTs can be suppressed by using epitaxial AIN/sapphire templates as substrates.

KW - AIGaN/AIN/GaN

KW - AIN/sapphire template

KW - HEMT

KW - Recessed ohmic

UR - http://www.scopus.com/inward/record.url?scp=26244443807&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=26244443807&partnerID=8YFLogxK

U2 - 10.1143/JJAP.44.6490

DO - 10.1143/JJAP.44.6490

M3 - Article

VL - 44

SP - 6490

EP - 6494

JO - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes

JF - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes

SN - 0021-4922

IS - 9 A

ER -