DC characteristics in high-quality AlGaN/AlN/GaN high-electron-mobility transistors grown on AIN/sapphire templates

Makoto Miyoshi, Atsushi Imanishi, Takashi Egawa, Hiroyasu Ishikawa, Kei Ichiro Asai, Tomohiko Shibata, Mitsuhiro Tanaka, Osamu Oda

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26 Citations (Scopus)

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