Decay kinetics of the 4.4 eV photoluminescence associated with the two states of oxygen-deficient-type defect in amorphous SiO2

Hiroyuki Nishikawa, Eiki Watanabe, Daisuke Ito, Yoshimichi Ohki

Research output: Contribution to journalArticle

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Abstract

We present the first observation of 4.4 eV photoluminescence (PL) decay in an oxygen-deficient-type silica excited with ultraviolet and vacuum ultraviolet photons from synchrotron radiation. The lifetime of the 4.4 eV PL is 4.2, 4.3, and 2.1 ns for the 5.0, 6.9, and 7.6 eV excitations, respectively, indicating the presence of multiple decay channels. This can be explained by an energy diagram involving the interconversion between two states of the oxygen-deficient-type defect.

Original languageEnglish
Pages (from-to)2101-2104
Number of pages4
JournalPhysical Review Letters
Volume72
Issue number13
Publication statusPublished - 1994
Externally publishedYes

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photoluminescence
defects
kinetics
decay
oxygen
synchrotron radiation
diagrams
silicon dioxide
life (durability)
vacuum
photons
excitation
energy

ASJC Scopus subject areas

  • Physics and Astronomy(all)

Cite this

Decay kinetics of the 4.4 eV photoluminescence associated with the two states of oxygen-deficient-type defect in amorphous SiO2. / Nishikawa, Hiroyuki; Watanabe, Eiki; Ito, Daisuke; Ohki, Yoshimichi.

In: Physical Review Letters, Vol. 72, No. 13, 1994, p. 2101-2104.

Research output: Contribution to journalArticle

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