Decrease in slow current transients and current collapse in GaN-based FETs with a filed plate

A. Nakajima, K. Itagaki, K. Horio

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Citation (Scopus)

Abstract

Two-dimensional transient analyses of AlGaN/GaN HEMTs and GaN MESFETs are performed in which a deep donor and a deep acceptor are considered in a semi-insulating buffer layer. Quasi-pulsed I-V curves are derived from the transient characteristics. It is studied how the existence of field plate affects buffer-related lag phenomena and current collapse. It is shown that in both FETs, the lag phenomena and current collapse could be reduced by introducing a field plate, because electron injection into the buffer layer is weakened by it, and trapping effects are reduced. The dependence on insulator-thickness under the field plate is also studied, suggesting that there is an optimum thickness of insulator to minimize the current collapse and drain lag.

Original languageEnglish
Title of host publication2008 European Microwave Integrated Circuit Conference, EuMIC 2008
Pages183-186
Number of pages4
DOIs
Publication statusPublished - 2008 Dec 1
Event2008 European Microwave Integrated Circuit Conference, EuMIC 2008 - Amsterdam, Netherlands
Duration: 2008 Oct 272008 Oct 31

Publication series

Name2008 European Microwave Integrated Circuit Conference, EuMIC 2008

Conference

Conference2008 European Microwave Integrated Circuit Conference, EuMIC 2008
CountryNetherlands
CityAmsterdam
Period08/10/2708/10/31

ASJC Scopus subject areas

  • Electrical and Electronic Engineering

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    Nakajima, A., Itagaki, K., & Horio, K. (2008). Decrease in slow current transients and current collapse in GaN-based FETs with a filed plate. In 2008 European Microwave Integrated Circuit Conference, EuMIC 2008 (pp. 183-186). [4772259] (2008 European Microwave Integrated Circuit Conference, EuMIC 2008). https://doi.org/10.1109/EMICC.2008.4772259