Decrease in slow current transients and current collapse in GaN-based FETs with a filed plate

A. Nakajima, K. Itagaki, Kazushige Horio

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Citation (Scopus)

Abstract

Two-dimensional transient analyses of AlGaN/GaN HEMTs and GaN MESFETs are performed in which a deep donor and a deep acceptor are considered in a semi-insulating buffer layer. Quasi-pulsed I-V curves are derived from the transient characteristics. It is studied how the existence of field plate affects buffer-related lag phenomena and current collapse. It is shown that in both FETs, the lag phenomena and current collapse could be reduced by introducing a field plate, because electron injection into the buffer layer is weakened by it, and trapping effects are reduced. The dependence on insulator-thickness under the field plate is also studied, suggesting that there is an optimum thickness of insulator to minimize the current collapse and drain lag.

Original languageEnglish
Title of host publication2008 European Microwave Integrated Circuit Conference, EuMIC 2008
Pages183-186
Number of pages4
DOIs
Publication statusPublished - 2008
Event2008 European Microwave Integrated Circuit Conference, EuMIC 2008 - Amsterdam
Duration: 2008 Oct 272008 Oct 31

Other

Other2008 European Microwave Integrated Circuit Conference, EuMIC 2008
CityAmsterdam
Period08/10/2708/10/31

Fingerprint

Buffer layers
Field effect transistors
Electron injection
High electron mobility transistors

ASJC Scopus subject areas

  • Electrical and Electronic Engineering

Cite this

Nakajima, A., Itagaki, K., & Horio, K. (2008). Decrease in slow current transients and current collapse in GaN-based FETs with a filed plate. In 2008 European Microwave Integrated Circuit Conference, EuMIC 2008 (pp. 183-186). [4772259] https://doi.org/10.1109/EMICC.2008.4772259

Decrease in slow current transients and current collapse in GaN-based FETs with a filed plate. / Nakajima, A.; Itagaki, K.; Horio, Kazushige.

2008 European Microwave Integrated Circuit Conference, EuMIC 2008. 2008. p. 183-186 4772259.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Nakajima, A, Itagaki, K & Horio, K 2008, Decrease in slow current transients and current collapse in GaN-based FETs with a filed plate. in 2008 European Microwave Integrated Circuit Conference, EuMIC 2008., 4772259, pp. 183-186, 2008 European Microwave Integrated Circuit Conference, EuMIC 2008, Amsterdam, 08/10/27. https://doi.org/10.1109/EMICC.2008.4772259
Nakajima A, Itagaki K, Horio K. Decrease in slow current transients and current collapse in GaN-based FETs with a filed plate. In 2008 European Microwave Integrated Circuit Conference, EuMIC 2008. 2008. p. 183-186. 4772259 https://doi.org/10.1109/EMICC.2008.4772259
Nakajima, A. ; Itagaki, K. ; Horio, Kazushige. / Decrease in slow current transients and current collapse in GaN-based FETs with a filed plate. 2008 European Microwave Integrated Circuit Conference, EuMIC 2008. 2008. pp. 183-186
@inproceedings{ba7197c6a70b4e0d9579655f1ec808ea,
title = "Decrease in slow current transients and current collapse in GaN-based FETs with a filed plate",
abstract = "Two-dimensional transient analyses of AlGaN/GaN HEMTs and GaN MESFETs are performed in which a deep donor and a deep acceptor are considered in a semi-insulating buffer layer. Quasi-pulsed I-V curves are derived from the transient characteristics. It is studied how the existence of field plate affects buffer-related lag phenomena and current collapse. It is shown that in both FETs, the lag phenomena and current collapse could be reduced by introducing a field plate, because electron injection into the buffer layer is weakened by it, and trapping effects are reduced. The dependence on insulator-thickness under the field plate is also studied, suggesting that there is an optimum thickness of insulator to minimize the current collapse and drain lag.",
author = "A. Nakajima and K. Itagaki and Kazushige Horio",
year = "2008",
doi = "10.1109/EMICC.2008.4772259",
language = "English",
isbn = "9782874870071",
pages = "183--186",
booktitle = "2008 European Microwave Integrated Circuit Conference, EuMIC 2008",

}

TY - GEN

T1 - Decrease in slow current transients and current collapse in GaN-based FETs with a filed plate

AU - Nakajima, A.

AU - Itagaki, K.

AU - Horio, Kazushige

PY - 2008

Y1 - 2008

N2 - Two-dimensional transient analyses of AlGaN/GaN HEMTs and GaN MESFETs are performed in which a deep donor and a deep acceptor are considered in a semi-insulating buffer layer. Quasi-pulsed I-V curves are derived from the transient characteristics. It is studied how the existence of field plate affects buffer-related lag phenomena and current collapse. It is shown that in both FETs, the lag phenomena and current collapse could be reduced by introducing a field plate, because electron injection into the buffer layer is weakened by it, and trapping effects are reduced. The dependence on insulator-thickness under the field plate is also studied, suggesting that there is an optimum thickness of insulator to minimize the current collapse and drain lag.

AB - Two-dimensional transient analyses of AlGaN/GaN HEMTs and GaN MESFETs are performed in which a deep donor and a deep acceptor are considered in a semi-insulating buffer layer. Quasi-pulsed I-V curves are derived from the transient characteristics. It is studied how the existence of field plate affects buffer-related lag phenomena and current collapse. It is shown that in both FETs, the lag phenomena and current collapse could be reduced by introducing a field plate, because electron injection into the buffer layer is weakened by it, and trapping effects are reduced. The dependence on insulator-thickness under the field plate is also studied, suggesting that there is an optimum thickness of insulator to minimize the current collapse and drain lag.

UR - http://www.scopus.com/inward/record.url?scp=66649086234&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=66649086234&partnerID=8YFLogxK

U2 - 10.1109/EMICC.2008.4772259

DO - 10.1109/EMICC.2008.4772259

M3 - Conference contribution

AN - SCOPUS:66649086234

SN - 9782874870071

SP - 183

EP - 186

BT - 2008 European Microwave Integrated Circuit Conference, EuMIC 2008

ER -