TY - GEN
T1 - Deep-level effects on slow current transients and current collapse in GaN MESFETs
AU - Yonemoto, K.
AU - Horio, K.
PY - 2005/12/1
Y1 - 2005/12/1
N2 - Slow current transients in a GaN MESFET are analyzed by two-dimensional simulation in which deep levels in a semi-insulating buffer layer is considered. It is shown that when the drain voltage VD is raised abruptly, the drain current overshoots the steady-state value, and when VD is lowered, the drain current remains at a low value for some periods, showing drain lag behavior. This drain lag is shown to become a cause of so-called current collapse in the GaN MESFET.
AB - Slow current transients in a GaN MESFET are analyzed by two-dimensional simulation in which deep levels in a semi-insulating buffer layer is considered. It is shown that when the drain voltage VD is raised abruptly, the drain current overshoots the steady-state value, and when VD is lowered, the drain current remains at a low value for some periods, showing drain lag behavior. This drain lag is shown to become a cause of so-called current collapse in the GaN MESFET.
UR - http://www.scopus.com/inward/record.url?scp=33746649110&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=33746649110&partnerID=8YFLogxK
U2 - 10.1109/SIM.2005.1511434
DO - 10.1109/SIM.2005.1511434
M3 - Conference contribution
AN - SCOPUS:33746649110
SN - 078038668X
SN - 9780780386686
T3 - IEEE Semiconducting and Semi-Insulating Materials Conference, SIMC
SP - 267
EP - 270
BT - 2004 13th International Conference on Semiconducting and Insulating Materials, SIMC-XIII-2004
T2 - 2004 13th International Conference on Semiconducting and Insulating Materials, SIMC-XIII-2004
Y2 - 20 September 2004 through 25 September 2004
ER -