Deep-level effects on slow current transients and current collapse in GaN MESFETs

K. Yonemoto, Kazushige Horio

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

Slow current transients in a GaN MESFET are analyzed by two-dimensional simulation in which deep levels in a semi-insulating buffer layer is considered. It is shown that when the drain voltage VD is raised abruptly, the drain current overshoots the steady-state value, and when VD is lowered, the drain current remains at a low value for some periods, showing drain lag behavior. This drain lag is shown to become a cause of so-called current collapse in the GaN MESFET.

Original languageEnglish
Title of host publicationIEEE Semiconducting and Semi-Insulating Materials Conference, SIMC
Pages267-270
Number of pages4
Volume2005
DOIs
Publication statusPublished - 2005
Event2004 13th International Conference on Semiconducting and Insulating Materials, SIMC-XIII-2004 - Beijing
Duration: 2004 Sep 202004 Sep 25

Other

Other2004 13th International Conference on Semiconducting and Insulating Materials, SIMC-XIII-2004
CityBeijing
Period04/9/2004/9/25

Fingerprint

Drain current
Buffer layers
Electric potential

ASJC Scopus subject areas

  • Engineering(all)

Cite this

Yonemoto, K., & Horio, K. (2005). Deep-level effects on slow current transients and current collapse in GaN MESFETs. In IEEE Semiconducting and Semi-Insulating Materials Conference, SIMC (Vol. 2005, pp. 267-270). [1511434] https://doi.org/10.1109/SIM.2005.1511434

Deep-level effects on slow current transients and current collapse in GaN MESFETs. / Yonemoto, K.; Horio, Kazushige.

IEEE Semiconducting and Semi-Insulating Materials Conference, SIMC. Vol. 2005 2005. p. 267-270 1511434.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Yonemoto, K & Horio, K 2005, Deep-level effects on slow current transients and current collapse in GaN MESFETs. in IEEE Semiconducting and Semi-Insulating Materials Conference, SIMC. vol. 2005, 1511434, pp. 267-270, 2004 13th International Conference on Semiconducting and Insulating Materials, SIMC-XIII-2004, Beijing, 04/9/20. https://doi.org/10.1109/SIM.2005.1511434
Yonemoto K, Horio K. Deep-level effects on slow current transients and current collapse in GaN MESFETs. In IEEE Semiconducting and Semi-Insulating Materials Conference, SIMC. Vol. 2005. 2005. p. 267-270. 1511434 https://doi.org/10.1109/SIM.2005.1511434
Yonemoto, K. ; Horio, Kazushige. / Deep-level effects on slow current transients and current collapse in GaN MESFETs. IEEE Semiconducting and Semi-Insulating Materials Conference, SIMC. Vol. 2005 2005. pp. 267-270
@inproceedings{ee43a93866c2440dbd4d289ab290127b,
title = "Deep-level effects on slow current transients and current collapse in GaN MESFETs",
abstract = "Slow current transients in a GaN MESFET are analyzed by two-dimensional simulation in which deep levels in a semi-insulating buffer layer is considered. It is shown that when the drain voltage VD is raised abruptly, the drain current overshoots the steady-state value, and when VD is lowered, the drain current remains at a low value for some periods, showing drain lag behavior. This drain lag is shown to become a cause of so-called current collapse in the GaN MESFET.",
author = "K. Yonemoto and Kazushige Horio",
year = "2005",
doi = "10.1109/SIM.2005.1511434",
language = "English",
isbn = "078038668X",
volume = "2005",
pages = "267--270",
booktitle = "IEEE Semiconducting and Semi-Insulating Materials Conference, SIMC",

}

TY - GEN

T1 - Deep-level effects on slow current transients and current collapse in GaN MESFETs

AU - Yonemoto, K.

AU - Horio, Kazushige

PY - 2005

Y1 - 2005

N2 - Slow current transients in a GaN MESFET are analyzed by two-dimensional simulation in which deep levels in a semi-insulating buffer layer is considered. It is shown that when the drain voltage VD is raised abruptly, the drain current overshoots the steady-state value, and when VD is lowered, the drain current remains at a low value for some periods, showing drain lag behavior. This drain lag is shown to become a cause of so-called current collapse in the GaN MESFET.

AB - Slow current transients in a GaN MESFET are analyzed by two-dimensional simulation in which deep levels in a semi-insulating buffer layer is considered. It is shown that when the drain voltage VD is raised abruptly, the drain current overshoots the steady-state value, and when VD is lowered, the drain current remains at a low value for some periods, showing drain lag behavior. This drain lag is shown to become a cause of so-called current collapse in the GaN MESFET.

UR - http://www.scopus.com/inward/record.url?scp=33746649110&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=33746649110&partnerID=8YFLogxK

U2 - 10.1109/SIM.2005.1511434

DO - 10.1109/SIM.2005.1511434

M3 - Conference contribution

SN - 078038668X

SN - 9780780386686

VL - 2005

SP - 267

EP - 270

BT - IEEE Semiconducting and Semi-Insulating Materials Conference, SIMC

ER -