Deep-level effects on slow current transients and current collapse in GaN MESFETs

K. Yonemoto, K. Horio

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

Slow current transients in a GaN MESFET are analyzed by two-dimensional simulation in which deep levels in a semi-insulating buffer layer is considered. It is shown that when the drain voltage VD is raised abruptly, the drain current overshoots the steady-state value, and when VD is lowered, the drain current remains at a low value for some periods, showing drain lag behavior. This drain lag is shown to become a cause of so-called current collapse in the GaN MESFET.

Original languageEnglish
Title of host publication2004 13th International Conference on Semiconducting and Insulating Materials, SIMC-XIII-2004
Pages267-270
Number of pages4
DOIs
Publication statusPublished - 2005 Dec 1
Event2004 13th International Conference on Semiconducting and Insulating Materials, SIMC-XIII-2004 - Beijing, China
Duration: 2004 Sep 202004 Sep 25

Publication series

NameIEEE Semiconducting and Semi-Insulating Materials Conference, SIMC
Volume2005

Conference

Conference2004 13th International Conference on Semiconducting and Insulating Materials, SIMC-XIII-2004
CountryChina
CityBeijing
Period04/9/2004/9/25

ASJC Scopus subject areas

  • Engineering(all)

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    Yonemoto, K., & Horio, K. (2005). Deep-level effects on slow current transients and current collapse in GaN MESFETs. In 2004 13th International Conference on Semiconducting and Insulating Materials, SIMC-XIII-2004 (pp. 267-270). [1511434] (IEEE Semiconducting and Semi-Insulating Materials Conference, SIMC; Vol. 2005). https://doi.org/10.1109/SIM.2005.1511434