Deep-ultraviolet micro-Raman investigation of surface defects in a 4H-SiC homoepitaxially grown film

Takuro Tomita, Shigeki Matsuo, Tatsuya Okada, Tsunenobu Kimoto, Hiroyuki Matsunami, Takeshi Mitani, Shin Ichi Nakashima

Research output: Contribution to journalArticle

9 Citations (Scopus)

Abstract

The structures of comet defects in a 4H-SiC homoepitaxially grown film are investigated by deep-ultraviolet micro-Raman spectroscopy. Spatial distribution of the 4H- and 3C-SiC is clearly distinguished both from the intensities of the folded longitudinal acoustic phonon mode and the peak energies of the nonfolded longitudinal optical phonon mode. The mappings of these parameters indicate the existence of two types of comets. The mechanisms of heteropolytypic inclusion in comets are discussed.

Original languageEnglish
Article number241906
Pages (from-to)1-3
Number of pages3
JournalApplied Physics Letters
Volume87
Issue number24
DOIs
Publication statusPublished - 2005
Externally publishedYes

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surface defects
comets
spatial distribution
Raman spectroscopy
inclusions
acoustics
defects
energy

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Cite this

Tomita, T., Matsuo, S., Okada, T., Kimoto, T., Matsunami, H., Mitani, T., & Nakashima, S. I. (2005). Deep-ultraviolet micro-Raman investigation of surface defects in a 4H-SiC homoepitaxially grown film. Applied Physics Letters, 87(24), 1-3. [241906]. https://doi.org/10.1063/1.2142080

Deep-ultraviolet micro-Raman investigation of surface defects in a 4H-SiC homoepitaxially grown film. / Tomita, Takuro; Matsuo, Shigeki; Okada, Tatsuya; Kimoto, Tsunenobu; Matsunami, Hiroyuki; Mitani, Takeshi; Nakashima, Shin Ichi.

In: Applied Physics Letters, Vol. 87, No. 24, 241906, 2005, p. 1-3.

Research output: Contribution to journalArticle

Tomita, T, Matsuo, S, Okada, T, Kimoto, T, Matsunami, H, Mitani, T & Nakashima, SI 2005, 'Deep-ultraviolet micro-Raman investigation of surface defects in a 4H-SiC homoepitaxially grown film', Applied Physics Letters, vol. 87, no. 24, 241906, pp. 1-3. https://doi.org/10.1063/1.2142080
Tomita, Takuro ; Matsuo, Shigeki ; Okada, Tatsuya ; Kimoto, Tsunenobu ; Matsunami, Hiroyuki ; Mitani, Takeshi ; Nakashima, Shin Ichi. / Deep-ultraviolet micro-Raman investigation of surface defects in a 4H-SiC homoepitaxially grown film. In: Applied Physics Letters. 2005 ; Vol. 87, No. 24. pp. 1-3.
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