Abstract
The nature of excess oxygen in as-manufactured and γ-irradiated high-purity synthetic silicas is investigated. Electron-spin-resonance measurements suggest that peroxy radicals (3/4 SiOO·) could be produced either by the cleavage of peroxy linkages (3/4 SiOOSi 3/4) or by the reaction of E'centers (3/4 Si·) with oxygen molecules. The excess oxygen is found to exist in the glass in two forms: as peroxy linkages and as interstitial molecular oxygen. The peroxy linkage is shown to be the cause of optical absorption at 3.8 eV. Heat treatment at 900-1000 °C results in the growth of the 3.8-eV band, that is, the peroxy linkages, through the reaction of oxygen vacancies and interstitial dioxygen molecules. These results indicate that the 5.0- and 3.8-eV bands (which are characteristic of "oxygen-deficient" and "oxygen-surplus" silica, respectively) can coexist in a glass, depending on the synthesis conditions.
| Original language | English |
|---|---|
| Pages (from-to) | 4672-4678 |
| Number of pages | 7 |
| Journal | Journal of Applied Physics |
| Volume | 65 |
| Issue number | 12 |
| DOIs | |
| Publication status | Published - 1989 |
| Externally published | Yes |
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ASJC Scopus subject areas
- Physics and Astronomy (miscellaneous)
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Defects and optical absorption bands induced by surplus oxygen in high-purity synthetic silica. / Nishikawa, Hiroyuki; Tohmon, Ryoichi; Ohki, Yoshimichi; Nagasawa, Kaya; Hama, Yoshimasa.
In: Journal of Applied Physics, Vol. 65, No. 12, 1989, p. 4672-4678.Research output: Contribution to journal › Article
}
TY - JOUR
T1 - Defects and optical absorption bands induced by surplus oxygen in high-purity synthetic silica
AU - Nishikawa, Hiroyuki
AU - Tohmon, Ryoichi
AU - Ohki, Yoshimichi
AU - Nagasawa, Kaya
AU - Hama, Yoshimasa
PY - 1989
Y1 - 1989
N2 - The nature of excess oxygen in as-manufactured and γ-irradiated high-purity synthetic silicas is investigated. Electron-spin-resonance measurements suggest that peroxy radicals (3/4 SiOO·) could be produced either by the cleavage of peroxy linkages (3/4 SiOOSi 3/4) or by the reaction of E'centers (3/4 Si·) with oxygen molecules. The excess oxygen is found to exist in the glass in two forms: as peroxy linkages and as interstitial molecular oxygen. The peroxy linkage is shown to be the cause of optical absorption at 3.8 eV. Heat treatment at 900-1000 °C results in the growth of the 3.8-eV band, that is, the peroxy linkages, through the reaction of oxygen vacancies and interstitial dioxygen molecules. These results indicate that the 5.0- and 3.8-eV bands (which are characteristic of "oxygen-deficient" and "oxygen-surplus" silica, respectively) can coexist in a glass, depending on the synthesis conditions.
AB - The nature of excess oxygen in as-manufactured and γ-irradiated high-purity synthetic silicas is investigated. Electron-spin-resonance measurements suggest that peroxy radicals (3/4 SiOO·) could be produced either by the cleavage of peroxy linkages (3/4 SiOOSi 3/4) or by the reaction of E'centers (3/4 Si·) with oxygen molecules. The excess oxygen is found to exist in the glass in two forms: as peroxy linkages and as interstitial molecular oxygen. The peroxy linkage is shown to be the cause of optical absorption at 3.8 eV. Heat treatment at 900-1000 °C results in the growth of the 3.8-eV band, that is, the peroxy linkages, through the reaction of oxygen vacancies and interstitial dioxygen molecules. These results indicate that the 5.0- and 3.8-eV bands (which are characteristic of "oxygen-deficient" and "oxygen-surplus" silica, respectively) can coexist in a glass, depending on the synthesis conditions.
UR - http://www.scopus.com/inward/record.url?scp=0000631663&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=0000631663&partnerID=8YFLogxK
U2 - 10.1063/1.343242
DO - 10.1063/1.343242
M3 - Article
AN - SCOPUS:0000631663
VL - 65
SP - 4672
EP - 4678
JO - Journal of Applied Physics
JF - Journal of Applied Physics
SN - 0021-8979
IS - 12
ER -