Deformation Behavior of Pressurized Sintered Ag Nanoparticles in Discrete Type Power Semiconductor Device

Kiichi Nagata, Yoshiharu Kariya, Shoji Horie

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

Creep deformation analysis of die attach materials in a discrete type power semiconductor device under the operating conditions were performed. Pressurized sintered Ag nanoparticles are superior in creep deformation resistance at any period between on time and off time and \varepsilon-{\mathrm {in}} per cycle was about 60% of Sn-3.0Ag-0.5Cu alloy.

Original languageEnglish
Title of host publicationProceedings of 2019 6th International Workshop on Low Temperature Bonding for 3D Integration, LTB-3D 2019
PublisherInstitute of Electrical and Electronics Engineers Inc.
Number of pages1
ISBN (Electronic)9784904743072
DOIs
Publication statusPublished - 2019 May 1
Event6th International Workshop on Low Temperature Bonding for 3D Integration, LTB-3D 2019 - Kanazawa, Ishikawa, Japan
Duration: 2019 May 212019 May 25

Publication series

NameProceedings of 2019 6th International Workshop on Low Temperature Bonding for 3D Integration, LTB-3D 2019

Conference

Conference6th International Workshop on Low Temperature Bonding for 3D Integration, LTB-3D 2019
CountryJapan
CityKanazawa, Ishikawa
Period19/5/2119/5/25

Fingerprint

Creep
Nanoparticles
Power semiconductor devices

ASJC Scopus subject areas

  • Process Chemistry and Technology
  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials

Cite this

Nagata, K., Kariya, Y., & Horie, S. (2019). Deformation Behavior of Pressurized Sintered Ag Nanoparticles in Discrete Type Power Semiconductor Device. In Proceedings of 2019 6th International Workshop on Low Temperature Bonding for 3D Integration, LTB-3D 2019 [8735247] (Proceedings of 2019 6th International Workshop on Low Temperature Bonding for 3D Integration, LTB-3D 2019). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.23919/LTB-3D.2019.8735247

Deformation Behavior of Pressurized Sintered Ag Nanoparticles in Discrete Type Power Semiconductor Device. / Nagata, Kiichi; Kariya, Yoshiharu; Horie, Shoji.

Proceedings of 2019 6th International Workshop on Low Temperature Bonding for 3D Integration, LTB-3D 2019. Institute of Electrical and Electronics Engineers Inc., 2019. 8735247 (Proceedings of 2019 6th International Workshop on Low Temperature Bonding for 3D Integration, LTB-3D 2019).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Nagata, K, Kariya, Y & Horie, S 2019, Deformation Behavior of Pressurized Sintered Ag Nanoparticles in Discrete Type Power Semiconductor Device. in Proceedings of 2019 6th International Workshop on Low Temperature Bonding for 3D Integration, LTB-3D 2019., 8735247, Proceedings of 2019 6th International Workshop on Low Temperature Bonding for 3D Integration, LTB-3D 2019, Institute of Electrical and Electronics Engineers Inc., 6th International Workshop on Low Temperature Bonding for 3D Integration, LTB-3D 2019, Kanazawa, Ishikawa, Japan, 19/5/21. https://doi.org/10.23919/LTB-3D.2019.8735247
Nagata K, Kariya Y, Horie S. Deformation Behavior of Pressurized Sintered Ag Nanoparticles in Discrete Type Power Semiconductor Device. In Proceedings of 2019 6th International Workshop on Low Temperature Bonding for 3D Integration, LTB-3D 2019. Institute of Electrical and Electronics Engineers Inc. 2019. 8735247. (Proceedings of 2019 6th International Workshop on Low Temperature Bonding for 3D Integration, LTB-3D 2019). https://doi.org/10.23919/LTB-3D.2019.8735247
Nagata, Kiichi ; Kariya, Yoshiharu ; Horie, Shoji. / Deformation Behavior of Pressurized Sintered Ag Nanoparticles in Discrete Type Power Semiconductor Device. Proceedings of 2019 6th International Workshop on Low Temperature Bonding for 3D Integration, LTB-3D 2019. Institute of Electrical and Electronics Engineers Inc., 2019. (Proceedings of 2019 6th International Workshop on Low Temperature Bonding for 3D Integration, LTB-3D 2019).
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