Degradation-free Cu/HSQ damascene technology using metal mask patterning and post-CMP cleaning by electrolytic ionized water

H. Aoki, S. Yamasaki, T. Usami, Y. Tsuchiya, N. Ito, T. Onodera, Y. Hayashi, Kazuyoshi Ueno, H. Gomi, N. Aoto

Research output: Chapter in Book/Report/Conference proceedingConference contribution

8 Citations (Scopus)

Abstract

A Cu/HSQ damascene structure can be achieved by a new HSQ patterning technology using a TiN mask and post-CMP cleaning with electrolytic ionized ultra-pure cathode water. A Cu/HSQ structure with capacitance 17% lower than that of HSQ patterned by a conventional photo-resist-mask process was successfully fabricated with a sufficiently small number of post-Cu-CMP particles, only 30% of that with conventional post-Cu-CMP cleaning.

Original languageEnglish
Title of host publicationTechnical Digest - International Electron Devices Meeting, IEDM
Pages777-780
Number of pages4
Publication statusPublished - 1997
Externally publishedYes
Event1997 International Electron Devices Meeting - Washington, DC, USA
Duration: 1997 Dec 71997 Dec 10

Other

Other1997 International Electron Devices Meeting
CityWashington, DC, USA
Period97/12/797/12/10

Fingerprint

Masks
Cleaning
Degradation
Metals
Water
Cathodes
Capacitance

ASJC Scopus subject areas

  • Engineering(all)

Cite this

Aoki, H., Yamasaki, S., Usami, T., Tsuchiya, Y., Ito, N., Onodera, T., ... Aoto, N. (1997). Degradation-free Cu/HSQ damascene technology using metal mask patterning and post-CMP cleaning by electrolytic ionized water. In Technical Digest - International Electron Devices Meeting, IEDM (pp. 777-780)

Degradation-free Cu/HSQ damascene technology using metal mask patterning and post-CMP cleaning by electrolytic ionized water. / Aoki, H.; Yamasaki, S.; Usami, T.; Tsuchiya, Y.; Ito, N.; Onodera, T.; Hayashi, Y.; Ueno, Kazuyoshi; Gomi, H.; Aoto, N.

Technical Digest - International Electron Devices Meeting, IEDM. 1997. p. 777-780.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Aoki, H, Yamasaki, S, Usami, T, Tsuchiya, Y, Ito, N, Onodera, T, Hayashi, Y, Ueno, K, Gomi, H & Aoto, N 1997, Degradation-free Cu/HSQ damascene technology using metal mask patterning and post-CMP cleaning by electrolytic ionized water. in Technical Digest - International Electron Devices Meeting, IEDM. pp. 777-780, 1997 International Electron Devices Meeting, Washington, DC, USA, 97/12/7.
Aoki H, Yamasaki S, Usami T, Tsuchiya Y, Ito N, Onodera T et al. Degradation-free Cu/HSQ damascene technology using metal mask patterning and post-CMP cleaning by electrolytic ionized water. In Technical Digest - International Electron Devices Meeting, IEDM. 1997. p. 777-780
Aoki, H. ; Yamasaki, S. ; Usami, T. ; Tsuchiya, Y. ; Ito, N. ; Onodera, T. ; Hayashi, Y. ; Ueno, Kazuyoshi ; Gomi, H. ; Aoto, N. / Degradation-free Cu/HSQ damascene technology using metal mask patterning and post-CMP cleaning by electrolytic ionized water. Technical Digest - International Electron Devices Meeting, IEDM. 1997. pp. 777-780
@inproceedings{11e90e20f6dd42aea1f34a3b80829369,
title = "Degradation-free Cu/HSQ damascene technology using metal mask patterning and post-CMP cleaning by electrolytic ionized water",
abstract = "A Cu/HSQ damascene structure can be achieved by a new HSQ patterning technology using a TiN mask and post-CMP cleaning with electrolytic ionized ultra-pure cathode water. A Cu/HSQ structure with capacitance 17{\%} lower than that of HSQ patterned by a conventional photo-resist-mask process was successfully fabricated with a sufficiently small number of post-Cu-CMP particles, only 30{\%} of that with conventional post-Cu-CMP cleaning.",
author = "H. Aoki and S. Yamasaki and T. Usami and Y. Tsuchiya and N. Ito and T. Onodera and Y. Hayashi and Kazuyoshi Ueno and H. Gomi and N. Aoto",
year = "1997",
language = "English",
pages = "777--780",
booktitle = "Technical Digest - International Electron Devices Meeting, IEDM",

}

TY - GEN

T1 - Degradation-free Cu/HSQ damascene technology using metal mask patterning and post-CMP cleaning by electrolytic ionized water

AU - Aoki, H.

AU - Yamasaki, S.

AU - Usami, T.

AU - Tsuchiya, Y.

AU - Ito, N.

AU - Onodera, T.

AU - Hayashi, Y.

AU - Ueno, Kazuyoshi

AU - Gomi, H.

AU - Aoto, N.

PY - 1997

Y1 - 1997

N2 - A Cu/HSQ damascene structure can be achieved by a new HSQ patterning technology using a TiN mask and post-CMP cleaning with electrolytic ionized ultra-pure cathode water. A Cu/HSQ structure with capacitance 17% lower than that of HSQ patterned by a conventional photo-resist-mask process was successfully fabricated with a sufficiently small number of post-Cu-CMP particles, only 30% of that with conventional post-Cu-CMP cleaning.

AB - A Cu/HSQ damascene structure can be achieved by a new HSQ patterning technology using a TiN mask and post-CMP cleaning with electrolytic ionized ultra-pure cathode water. A Cu/HSQ structure with capacitance 17% lower than that of HSQ patterned by a conventional photo-resist-mask process was successfully fabricated with a sufficiently small number of post-Cu-CMP particles, only 30% of that with conventional post-Cu-CMP cleaning.

UR - http://www.scopus.com/inward/record.url?scp=84886448085&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84886448085&partnerID=8YFLogxK

M3 - Conference contribution

SP - 777

EP - 780

BT - Technical Digest - International Electron Devices Meeting, IEDM

ER -