Degradation-free Cu/HSQ damascene technology using metal mask patterning and post-CMP cleaning by electrolytic ionized water

H. Aoki, S. Yamasaki, T. Usami, Y. Tsuchiya, N. Ito, T. Onodera, Y. Hayashi, K. Ueno, H. Gomi, N. Aoto

Research output: Contribution to journalConference article

8 Citations (Scopus)


A Cu/HSQ damascene structure can be achieved by a new HSQ patterning technology using a TiN mask and post-CMP cleaning with electrolytic ionized ultra-pure cathode water. A Cu/HSQ structure with capacitance 17% lower than that of HSQ patterned by a conventional photo-resist-mask process was successfully fabricated with a sufficiently small number of post-Cu-CMP particles, only 30% of that with conventional post-Cu-CMP cleaning.

Original languageEnglish
Pages (from-to)777-780
Number of pages4
JournalTechnical Digest - International Electron Devices Meeting, IEDM
Publication statusPublished - 1997 Dec 1
Event1997 International Electron Devices Meeting - Washington, DC, USA
Duration: 1997 Dec 71997 Dec 10


ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry

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