Degradation of electromigration lifetime by post-annealing for CU/Low-k interconnects

Y. Kakuhara, Kazuyoshi Ueno

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Citation (Scopus)
Original languageEnglish
Title of host publicationIEEE International Reliability Physics Symposium Proceedings
Pages656-657
Number of pages2
Publication statusPublished - 2005
Externally publishedYes
Event2005 IEEE International Reliability Physics Symposium Proceedings, 43rd Annual - San Jose, CA
Duration: 2005 Apr 172005 Apr 21

Other

Other2005 IEEE International Reliability Physics Symposium Proceedings, 43rd Annual
CitySan Jose, CA
Period05/4/1705/4/21

Fingerprint

Electromigration
Annealing
Degradation

ASJC Scopus subject areas

  • Engineering(all)

Cite this

Kakuhara, Y., & Ueno, K. (2005). Degradation of electromigration lifetime by post-annealing for CU/Low-k interconnects. In IEEE International Reliability Physics Symposium Proceedings (pp. 656-657)

Degradation of electromigration lifetime by post-annealing for CU/Low-k interconnects. / Kakuhara, Y.; Ueno, Kazuyoshi.

IEEE International Reliability Physics Symposium Proceedings. 2005. p. 656-657.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Kakuhara, Y & Ueno, K 2005, Degradation of electromigration lifetime by post-annealing for CU/Low-k interconnects. in IEEE International Reliability Physics Symposium Proceedings. pp. 656-657, 2005 IEEE International Reliability Physics Symposium Proceedings, 43rd Annual, San Jose, CA, 05/4/17.
Kakuhara Y, Ueno K. Degradation of electromigration lifetime by post-annealing for CU/Low-k interconnects. In IEEE International Reliability Physics Symposium Proceedings. 2005. p. 656-657
Kakuhara, Y. ; Ueno, Kazuyoshi. / Degradation of electromigration lifetime by post-annealing for CU/Low-k interconnects. IEEE International Reliability Physics Symposium Proceedings. 2005. pp. 656-657
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