Degradation of electromigration lifetime by post-annealing for CU/Low-k interconnects

Y. Kakuhara, K. Ueno

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Citation (Scopus)
Original languageEnglish
Title of host publication2005 IEEE International Reliability Physics Symposium Proceedings, 43rd Annual
Pages656-657
Number of pages2
Publication statusPublished - 2005 Dec 15
Event2005 IEEE International Reliability Physics Symposium Proceedings, 43rd Annual - San Jose, CA, United States
Duration: 2005 Apr 172005 Apr 21

Publication series

NameIEEE International Reliability Physics Symposium Proceedings
ISSN (Print)1541-7026

Conference

Conference2005 IEEE International Reliability Physics Symposium Proceedings, 43rd Annual
CountryUnited States
CitySan Jose, CA
Period05/4/1705/4/21

ASJC Scopus subject areas

  • Engineering(all)

Cite this

Kakuhara, Y., & Ueno, K. (2005). Degradation of electromigration lifetime by post-annealing for CU/Low-k interconnects. In 2005 IEEE International Reliability Physics Symposium Proceedings, 43rd Annual (pp. 656-657). (IEEE International Reliability Physics Symposium Proceedings).