Degradation of InGaN/AlGaN LED on sapphire substrate grown by MOCVD

T. Egawa, Hiroyasu Ishikawa, T. Jimbo, M. Umeno

Research output: Chapter in Book/Report/Conference proceedingConference contribution

3 Citations (Scopus)

Abstract

We report an optical degradation of an InGaN/AlGaN double-heterostructure light-emitting diode (LED) on a sapphire substrate grown by metallorganic chemical vapor deposition. The InGaN/AlGaN LED exhibited an optical output power of 0.17 mW, external quantum efficiency of 0.2 %, and the peak emitting spectrum at 437 nm with full width at half-maximum of 63 nm under 30 mA dc operation at 300 K. The InGaN/AlGaN LED showed the optical degradation under high injected current density. Electroluminescence, electron-beam induced current and cathodoluminescence observations show that the degraded InGaN/AlGaN LED exhibits formation and propagation of dark spots and a crescent-shaped dark patch, which act as nonradiative recombination centers. The values of degradation rate under injected current density of 0.1 kA/cm 2 were determined to be 1.1 × 10 -3, 1.9 × 10 -3 and 3.9 × 10 -3 h -1 at ambient temperatures of 30, 50 and 80°C, respectively. The activation energy of degradation was also determined to be 0.23 eV.

Original languageEnglish
Title of host publicationMaterials Research Society Symposium - Proceedings
EditorsF.A. Ponce, T.D. Moustakas, I. Akasaki, B.A. Monemar
PublisherMaterials Research Society
Pages1191-1196
Number of pages6
Volume449
Publication statusPublished - 1997
Externally publishedYes
EventProceedings of the 1996 MRS Fall Symposium - Boston, MA, USA
Duration: 1996 Dec 21996 Dec 6

Other

OtherProceedings of the 1996 MRS Fall Symposium
CityBoston, MA, USA
Period96/12/296/12/6

Fingerprint

Aluminum Oxide
Metallorganic chemical vapor deposition
Sapphire
Light emitting diodes
Degradation
Substrates
Current density
Cathodoluminescence
Induced currents
Electroluminescence
Full width at half maximum
Quantum efficiency
Heterojunctions
Electron beams
Activation energy
aluminum gallium nitride
Temperature

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials

Cite this

Egawa, T., Ishikawa, H., Jimbo, T., & Umeno, M. (1997). Degradation of InGaN/AlGaN LED on sapphire substrate grown by MOCVD. In F. A. Ponce, T. D. Moustakas, I. Akasaki, & B. A. Monemar (Eds.), Materials Research Society Symposium - Proceedings (Vol. 449, pp. 1191-1196). Materials Research Society.

Degradation of InGaN/AlGaN LED on sapphire substrate grown by MOCVD. / Egawa, T.; Ishikawa, Hiroyasu; Jimbo, T.; Umeno, M.

Materials Research Society Symposium - Proceedings. ed. / F.A. Ponce; T.D. Moustakas; I. Akasaki; B.A. Monemar. Vol. 449 Materials Research Society, 1997. p. 1191-1196.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Egawa, T, Ishikawa, H, Jimbo, T & Umeno, M 1997, Degradation of InGaN/AlGaN LED on sapphire substrate grown by MOCVD. in FA Ponce, TD Moustakas, I Akasaki & BA Monemar (eds), Materials Research Society Symposium - Proceedings. vol. 449, Materials Research Society, pp. 1191-1196, Proceedings of the 1996 MRS Fall Symposium, Boston, MA, USA, 96/12/2.
Egawa T, Ishikawa H, Jimbo T, Umeno M. Degradation of InGaN/AlGaN LED on sapphire substrate grown by MOCVD. In Ponce FA, Moustakas TD, Akasaki I, Monemar BA, editors, Materials Research Society Symposium - Proceedings. Vol. 449. Materials Research Society. 1997. p. 1191-1196
Egawa, T. ; Ishikawa, Hiroyasu ; Jimbo, T. ; Umeno, M. / Degradation of InGaN/AlGaN LED on sapphire substrate grown by MOCVD. Materials Research Society Symposium - Proceedings. editor / F.A. Ponce ; T.D. Moustakas ; I. Akasaki ; B.A. Monemar. Vol. 449 Materials Research Society, 1997. pp. 1191-1196
@inproceedings{5b180cfce9c94f4ca03f78282f69de9b,
title = "Degradation of InGaN/AlGaN LED on sapphire substrate grown by MOCVD",
abstract = "We report an optical degradation of an InGaN/AlGaN double-heterostructure light-emitting diode (LED) on a sapphire substrate grown by metallorganic chemical vapor deposition. The InGaN/AlGaN LED exhibited an optical output power of 0.17 mW, external quantum efficiency of 0.2 {\%}, and the peak emitting spectrum at 437 nm with full width at half-maximum of 63 nm under 30 mA dc operation at 300 K. The InGaN/AlGaN LED showed the optical degradation under high injected current density. Electroluminescence, electron-beam induced current and cathodoluminescence observations show that the degraded InGaN/AlGaN LED exhibits formation and propagation of dark spots and a crescent-shaped dark patch, which act as nonradiative recombination centers. The values of degradation rate under injected current density of 0.1 kA/cm 2 were determined to be 1.1 × 10 -3, 1.9 × 10 -3 and 3.9 × 10 -3 h -1 at ambient temperatures of 30, 50 and 80°C, respectively. The activation energy of degradation was also determined to be 0.23 eV.",
author = "T. Egawa and Hiroyasu Ishikawa and T. Jimbo and M. Umeno",
year = "1997",
language = "English",
volume = "449",
pages = "1191--1196",
editor = "F.A. Ponce and T.D. Moustakas and I. Akasaki and B.A. Monemar",
booktitle = "Materials Research Society Symposium - Proceedings",
publisher = "Materials Research Society",

}

TY - GEN

T1 - Degradation of InGaN/AlGaN LED on sapphire substrate grown by MOCVD

AU - Egawa, T.

AU - Ishikawa, Hiroyasu

AU - Jimbo, T.

AU - Umeno, M.

PY - 1997

Y1 - 1997

N2 - We report an optical degradation of an InGaN/AlGaN double-heterostructure light-emitting diode (LED) on a sapphire substrate grown by metallorganic chemical vapor deposition. The InGaN/AlGaN LED exhibited an optical output power of 0.17 mW, external quantum efficiency of 0.2 %, and the peak emitting spectrum at 437 nm with full width at half-maximum of 63 nm under 30 mA dc operation at 300 K. The InGaN/AlGaN LED showed the optical degradation under high injected current density. Electroluminescence, electron-beam induced current and cathodoluminescence observations show that the degraded InGaN/AlGaN LED exhibits formation and propagation of dark spots and a crescent-shaped dark patch, which act as nonradiative recombination centers. The values of degradation rate under injected current density of 0.1 kA/cm 2 were determined to be 1.1 × 10 -3, 1.9 × 10 -3 and 3.9 × 10 -3 h -1 at ambient temperatures of 30, 50 and 80°C, respectively. The activation energy of degradation was also determined to be 0.23 eV.

AB - We report an optical degradation of an InGaN/AlGaN double-heterostructure light-emitting diode (LED) on a sapphire substrate grown by metallorganic chemical vapor deposition. The InGaN/AlGaN LED exhibited an optical output power of 0.17 mW, external quantum efficiency of 0.2 %, and the peak emitting spectrum at 437 nm with full width at half-maximum of 63 nm under 30 mA dc operation at 300 K. The InGaN/AlGaN LED showed the optical degradation under high injected current density. Electroluminescence, electron-beam induced current and cathodoluminescence observations show that the degraded InGaN/AlGaN LED exhibits formation and propagation of dark spots and a crescent-shaped dark patch, which act as nonradiative recombination centers. The values of degradation rate under injected current density of 0.1 kA/cm 2 were determined to be 1.1 × 10 -3, 1.9 × 10 -3 and 3.9 × 10 -3 h -1 at ambient temperatures of 30, 50 and 80°C, respectively. The activation energy of degradation was also determined to be 0.23 eV.

UR - http://www.scopus.com/inward/record.url?scp=0030644616&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0030644616&partnerID=8YFLogxK

M3 - Conference contribution

AN - SCOPUS:0030644616

VL - 449

SP - 1191

EP - 1196

BT - Materials Research Society Symposium - Proceedings

A2 - Ponce, F.A.

A2 - Moustakas, T.D.

A2 - Akasaki, I.

A2 - Monemar, B.A.

PB - Materials Research Society

ER -