Degradation of InGaN/AlGaN LED on sapphire substrate grown by MOCVD

T. Egawa, H. Ishikawa, T. Jimbo, M. Umeno

Research output: Contribution to journalConference article

3 Citations (Scopus)

Abstract

We report an optical degradation of an InGaN/AlGaN double-heterostructure light-emitting diode (LED) on a sapphire substrate grown by metallorganic chemical vapor deposition. The InGaN/AlGaN LED exhibited an optical output power of 0.17 mW, external quantum efficiency of 0.2 %, and the peak emitting spectrum at 437 nm with full width at half-maximum of 63 nm under 30 mA dc operation at 300 K. The InGaN/AlGaN LED showed the optical degradation under high injected current density. Electroluminescence, electron-beam induced current and cathodoluminescence observations show that the degraded InGaN/AlGaN LED exhibits formation and propagation of dark spots and a crescent-shaped dark patch, which act as nonradiative recombination centers. The values of degradation rate under injected current density of 0.1 kA/cm2 were determined to be 1.1 × 10-3, 1.9 × 10-3 and 3.9 × 10-3 h-1 at ambient temperatures of 30, 50 and 80°C, respectively. The activation energy of degradation was also determined to be 0.23 eV.

Original languageEnglish
Pages (from-to)1191-1196
Number of pages6
JournalMaterials Research Society Symposium - Proceedings
Volume449
Publication statusPublished - 1997 Jan 1
EventProceedings of the 1996 MRS Fall Symposium - Boston, MA, USA
Duration: 1996 Dec 21996 Dec 6

ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

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