Abstract
Structural, electrical, and optical properties of an InGaN-based light-emitting diode (LED) on an AlN/sapphire template have been studied and compared with the conventional LED properties on a sapphire substrate. In comparison to the LED on sapphire, the LED on AlN/sapphire template has shown better electrical and optical characteristics, which are due to a low threading dislocation density, high resistive, and thermal conductive AlN layer. An additional advantage is to grow a high-quality LED structure on an AlN/sapphire template without using low-temperature-grown GaN or an AlN buffer layer.
| Original language | English |
|---|---|
| Pages (from-to) | 292-294 |
| Number of pages | 3 |
| Journal | Applied Physics Letters |
| Volume | 81 |
| Issue number | 2 |
| DOIs | |
| Publication status | Published - 2002 Jul 8 |
ASJC Scopus subject areas
- Physics and Astronomy (miscellaneous)
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Cite this
Egawa, T., Ohmura, H., Ishikawa, H., & Jimbo, T. (2002). Demonstration of an InGaN-based light-emitting diode on an AlN/sapphire template by metalorganic chemical vapor deposition. Applied Physics Letters, 81(2), 292-294. https://doi.org/10.1063/1.1492857