Abstract
Structural, electrical, and optical properties of an InGaN-based light-emitting diode (LED) on an AlN/sapphire template have been studied and compared with the conventional LED properties on a sapphire substrate. In comparison to the LED on sapphire, the LED on AlN/sapphire template has shown better electrical and optical characteristics, which are due to a low threading dislocation density, high resistive, and thermal conductive AlN layer. An additional advantage is to grow a high-quality LED structure on an AlN/sapphire template without using low-temperature-grown GaN or an AlN buffer layer.
Original language | English |
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Pages (from-to) | 292-294 |
Number of pages | 3 |
Journal | Applied Physics Letters |
Volume | 81 |
Issue number | 2 |
DOIs | |
Publication status | Published - 2002 Jul 8 |
Externally published | Yes |
ASJC Scopus subject areas
- Physics and Astronomy (miscellaneous)