Demonstration of an InGaN-based light-emitting diode on an AlN/sapphire template by metalorganic chemical vapor deposition

T. Egawa, H. Ohmura, H. Ishikawa, T. Jimbo

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Abstract

Structural, electrical, and optical properties of an InGaN-based light-emitting diode (LED) on an AlN/sapphire template have been studied and compared with the conventional LED properties on a sapphire substrate. In comparison to the LED on sapphire, the LED on AlN/sapphire template has shown better electrical and optical characteristics, which are due to a low threading dislocation density, high resistive, and thermal conductive AlN layer. An additional advantage is to grow a high-quality LED structure on an AlN/sapphire template without using low-temperature-grown GaN or an AlN buffer layer.

Original languageEnglish
Pages (from-to)292-294
Number of pages3
JournalApplied Physics Letters
Volume81
Issue number2
DOIs
Publication statusPublished - 2002 Jul 8

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ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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