Demonstration of an InGaN-based light-emitting diode on an AlN/sapphire template by metalorganic chemical vapor deposition

T. Egawa, H. Ohmura, Hiroyasu Ishikawa, T. Jimbo

Research output: Contribution to journalArticle

35 Citations (Scopus)

Abstract

Structural, electrical, and optical properties of an InGaN-based light-emitting diode (LED) on an AlN/sapphire template have been studied and compared with the conventional LED properties on a sapphire substrate. In comparison to the LED on sapphire, the LED on AlN/sapphire template has shown better electrical and optical characteristics, which are due to a low threading dislocation density, high resistive, and thermal conductive AlN layer. An additional advantage is to grow a high-quality LED structure on an AlN/sapphire template without using low-temperature-grown GaN or an AlN buffer layer.

Original languageEnglish
Pages (from-to)292-294
Number of pages3
JournalApplied Physics Letters
Volume81
Issue number2
DOIs
Publication statusPublished - 2002 Jul 8
Externally publishedYes

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metalorganic chemical vapor deposition
sapphire
light emitting diodes
templates
buffers
electrical properties
optical properties

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Cite this

Demonstration of an InGaN-based light-emitting diode on an AlN/sapphire template by metalorganic chemical vapor deposition. / Egawa, T.; Ohmura, H.; Ishikawa, Hiroyasu; Jimbo, T.

In: Applied Physics Letters, Vol. 81, No. 2, 08.07.2002, p. 292-294.

Research output: Contribution to journalArticle

@article{634e7774cf2a4ce0876beb61cb075d8c,
title = "Demonstration of an InGaN-based light-emitting diode on an AlN/sapphire template by metalorganic chemical vapor deposition",
abstract = "Structural, electrical, and optical properties of an InGaN-based light-emitting diode (LED) on an AlN/sapphire template have been studied and compared with the conventional LED properties on a sapphire substrate. In comparison to the LED on sapphire, the LED on AlN/sapphire template has shown better electrical and optical characteristics, which are due to a low threading dislocation density, high resistive, and thermal conductive AlN layer. An additional advantage is to grow a high-quality LED structure on an AlN/sapphire template without using low-temperature-grown GaN or an AlN buffer layer.",
author = "T. Egawa and H. Ohmura and Hiroyasu Ishikawa and T. Jimbo",
year = "2002",
month = "7",
day = "8",
doi = "10.1063/1.1492857",
language = "English",
volume = "81",
pages = "292--294",
journal = "Applied Physics Letters",
issn = "0003-6951",
publisher = "American Institute of Physics Publising LLC",
number = "2",

}

TY - JOUR

T1 - Demonstration of an InGaN-based light-emitting diode on an AlN/sapphire template by metalorganic chemical vapor deposition

AU - Egawa, T.

AU - Ohmura, H.

AU - Ishikawa, Hiroyasu

AU - Jimbo, T.

PY - 2002/7/8

Y1 - 2002/7/8

N2 - Structural, electrical, and optical properties of an InGaN-based light-emitting diode (LED) on an AlN/sapphire template have been studied and compared with the conventional LED properties on a sapphire substrate. In comparison to the LED on sapphire, the LED on AlN/sapphire template has shown better electrical and optical characteristics, which are due to a low threading dislocation density, high resistive, and thermal conductive AlN layer. An additional advantage is to grow a high-quality LED structure on an AlN/sapphire template without using low-temperature-grown GaN or an AlN buffer layer.

AB - Structural, electrical, and optical properties of an InGaN-based light-emitting diode (LED) on an AlN/sapphire template have been studied and compared with the conventional LED properties on a sapphire substrate. In comparison to the LED on sapphire, the LED on AlN/sapphire template has shown better electrical and optical characteristics, which are due to a low threading dislocation density, high resistive, and thermal conductive AlN layer. An additional advantage is to grow a high-quality LED structure on an AlN/sapphire template without using low-temperature-grown GaN or an AlN buffer layer.

UR - http://www.scopus.com/inward/record.url?scp=79956012940&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=79956012940&partnerID=8YFLogxK

U2 - 10.1063/1.1492857

DO - 10.1063/1.1492857

M3 - Article

AN - SCOPUS:79956012940

VL - 81

SP - 292

EP - 294

JO - Applied Physics Letters

JF - Applied Physics Letters

SN - 0003-6951

IS - 2

ER -