Abstract
Structural, electrical, and optical properties of an InGaN-based light-emitting diode (LED) on an AlN/sapphire template have been studied and compared with the conventional LED properties on a sapphire substrate. In comparison to the LED on sapphire, the LED on AlN/sapphire template has shown better electrical and optical characteristics, which are due to a low threading dislocation density, high resistive, and thermal conductive AlN layer. An additional advantage is to grow a high-quality LED structure on an AlN/sapphire template without using low-temperature-grown GaN or an AlN buffer layer.
| Original language | English |
|---|---|
| Pages (from-to) | 292-294 |
| Number of pages | 3 |
| Journal | Applied Physics Letters |
| Volume | 81 |
| Issue number | 2 |
| DOIs | |
| Publication status | Published - 2002 Jul 8 |
| Externally published | Yes |
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ASJC Scopus subject areas
- Physics and Astronomy (miscellaneous)
Cite this
Demonstration of an InGaN-based light-emitting diode on an AlN/sapphire template by metalorganic chemical vapor deposition. / Egawa, T.; Ohmura, H.; Ishikawa, Hiroyasu; Jimbo, T.
In: Applied Physics Letters, Vol. 81, No. 2, 08.07.2002, p. 292-294.Research output: Contribution to journal › Article
}
TY - JOUR
T1 - Demonstration of an InGaN-based light-emitting diode on an AlN/sapphire template by metalorganic chemical vapor deposition
AU - Egawa, T.
AU - Ohmura, H.
AU - Ishikawa, Hiroyasu
AU - Jimbo, T.
PY - 2002/7/8
Y1 - 2002/7/8
N2 - Structural, electrical, and optical properties of an InGaN-based light-emitting diode (LED) on an AlN/sapphire template have been studied and compared with the conventional LED properties on a sapphire substrate. In comparison to the LED on sapphire, the LED on AlN/sapphire template has shown better electrical and optical characteristics, which are due to a low threading dislocation density, high resistive, and thermal conductive AlN layer. An additional advantage is to grow a high-quality LED structure on an AlN/sapphire template without using low-temperature-grown GaN or an AlN buffer layer.
AB - Structural, electrical, and optical properties of an InGaN-based light-emitting diode (LED) on an AlN/sapphire template have been studied and compared with the conventional LED properties on a sapphire substrate. In comparison to the LED on sapphire, the LED on AlN/sapphire template has shown better electrical and optical characteristics, which are due to a low threading dislocation density, high resistive, and thermal conductive AlN layer. An additional advantage is to grow a high-quality LED structure on an AlN/sapphire template without using low-temperature-grown GaN or an AlN buffer layer.
UR - http://www.scopus.com/inward/record.url?scp=79956012940&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=79956012940&partnerID=8YFLogxK
U2 - 10.1063/1.1492857
DO - 10.1063/1.1492857
M3 - Article
AN - SCOPUS:79956012940
VL - 81
SP - 292
EP - 294
JO - Applied Physics Letters
JF - Applied Physics Letters
SN - 0003-6951
IS - 2
ER -