Abstract
We present the experimental study of an optical isolator with a semiconductor guiding layer that was obtained by use of a nonreciprocal phase shift. The isolator is equipped with an optical interferometer composed of tapered couplers, nonreciprocal phase shifters, and a reciprocal phase shifter. The nonreciprocal phase shifter was constructed by wafer direct bonding between the semiconductor guiding layer and the magneto-optic cladding layer. The isolator, designed for the 1.55-μm wavelength, was fabricated to investigate the characteristics of each component. By applying an external magnetic field to the nonreciprocal phase shifter, we achieved an isolation ratio of approximately 4.9 dB in the interferometric isolator.
| Original language | English |
|---|---|
| Pages (from-to) | 6158-6164 |
| Number of pages | 7 |
| Journal | Applied Optics |
| Volume | 39 |
| Issue number | 33 |
| Publication status | Published - 2000 Nov 20 |
| Externally published | Yes |
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ASJC Scopus subject areas
- Atomic and Molecular Physics, and Optics
Cite this
Demonstration of an optical isolator with a semiconductor guiding layer that was obtained by use of a nonreciprocal phase shift. / Yokoi, Hideki; Mizumoto, Tetsuya; Shinjo, Nobuhiro; Futakuchi, Naoki; Nakano, Yoshiaki.
In: Applied Optics, Vol. 39, No. 33, 20.11.2000, p. 6158-6164.Research output: Contribution to journal › Article
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TY - JOUR
T1 - Demonstration of an optical isolator with a semiconductor guiding layer that was obtained by use of a nonreciprocal phase shift
AU - Yokoi, Hideki
AU - Mizumoto, Tetsuya
AU - Shinjo, Nobuhiro
AU - Futakuchi, Naoki
AU - Nakano, Yoshiaki
PY - 2000/11/20
Y1 - 2000/11/20
N2 - We present the experimental study of an optical isolator with a semiconductor guiding layer that was obtained by use of a nonreciprocal phase shift. The isolator is equipped with an optical interferometer composed of tapered couplers, nonreciprocal phase shifters, and a reciprocal phase shifter. The nonreciprocal phase shifter was constructed by wafer direct bonding between the semiconductor guiding layer and the magneto-optic cladding layer. The isolator, designed for the 1.55-μm wavelength, was fabricated to investigate the characteristics of each component. By applying an external magnetic field to the nonreciprocal phase shifter, we achieved an isolation ratio of approximately 4.9 dB in the interferometric isolator.
AB - We present the experimental study of an optical isolator with a semiconductor guiding layer that was obtained by use of a nonreciprocal phase shift. The isolator is equipped with an optical interferometer composed of tapered couplers, nonreciprocal phase shifters, and a reciprocal phase shifter. The nonreciprocal phase shifter was constructed by wafer direct bonding between the semiconductor guiding layer and the magneto-optic cladding layer. The isolator, designed for the 1.55-μm wavelength, was fabricated to investigate the characteristics of each component. By applying an external magnetic field to the nonreciprocal phase shifter, we achieved an isolation ratio of approximately 4.9 dB in the interferometric isolator.
UR - http://www.scopus.com/inward/record.url?scp=0000969503&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=0000969503&partnerID=8YFLogxK
M3 - Article
C2 - 18354623
AN - SCOPUS:0000969503
VL - 39
SP - 6158
EP - 6164
JO - Applied Optics
JF - Applied Optics
SN - 0003-6935
IS - 33
ER -