Demonstration of an optical isolator with a semiconductor guiding layer that was obtained by use of a nonreciprocal phase shift

Hideki Yokoi, Tetsuya Mizumoto, Nobuhiro Shinjo, Naoki Futakuchi, Yoshiaki Nakano

Research output: Contribution to journalArticle

120 Citations (Scopus)

Abstract

We present the experimental study of an optical isolator with a semiconductor guiding layer that was obtained by use of a nonreciprocal phase shift. The isolator is equipped with an optical interferometer composed of tapered couplers, nonreciprocal phase shifters, and a reciprocal phase shifter. The nonreciprocal phase shifter was constructed by wafer direct bonding between the semiconductor guiding layer and the magneto-optic cladding layer. The isolator, designed for the 1.55-μm wavelength, was fabricated to investigate the characteristics of each component. By applying an external magnetic field to the nonreciprocal phase shifter, we achieved an isolation ratio of approximately 4.9 dB in the interferometric isolator.

Original languageEnglish
Pages (from-to)6158-6164
Number of pages7
JournalApplied Optics
Volume39
Issue number33
Publication statusPublished - 2000 Nov 20
Externally publishedYes

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isolators
Phase shifters
Phase shift
phase shift
Demonstrations
Semiconductor materials
Magnetooptical effects
magneto-optics
Interferometers
couplers
isolation
interferometers
wafers
Magnetic fields
Wavelength
magnetic fields
wavelengths

ASJC Scopus subject areas

  • Atomic and Molecular Physics, and Optics

Cite this

Demonstration of an optical isolator with a semiconductor guiding layer that was obtained by use of a nonreciprocal phase shift. / Yokoi, Hideki; Mizumoto, Tetsuya; Shinjo, Nobuhiro; Futakuchi, Naoki; Nakano, Yoshiaki.

In: Applied Optics, Vol. 39, No. 33, 20.11.2000, p. 6158-6164.

Research output: Contribution to journalArticle

Yokoi, Hideki ; Mizumoto, Tetsuya ; Shinjo, Nobuhiro ; Futakuchi, Naoki ; Nakano, Yoshiaki. / Demonstration of an optical isolator with a semiconductor guiding layer that was obtained by use of a nonreciprocal phase shift. In: Applied Optics. 2000 ; Vol. 39, No. 33. pp. 6158-6164.
@article{2866ecf6c7bd45f59ae96f0a684158b7,
title = "Demonstration of an optical isolator with a semiconductor guiding layer that was obtained by use of a nonreciprocal phase shift",
abstract = "We present the experimental study of an optical isolator with a semiconductor guiding layer that was obtained by use of a nonreciprocal phase shift. The isolator is equipped with an optical interferometer composed of tapered couplers, nonreciprocal phase shifters, and a reciprocal phase shifter. The nonreciprocal phase shifter was constructed by wafer direct bonding between the semiconductor guiding layer and the magneto-optic cladding layer. The isolator, designed for the 1.55-μm wavelength, was fabricated to investigate the characteristics of each component. By applying an external magnetic field to the nonreciprocal phase shifter, we achieved an isolation ratio of approximately 4.9 dB in the interferometric isolator.",
author = "Hideki Yokoi and Tetsuya Mizumoto and Nobuhiro Shinjo and Naoki Futakuchi and Yoshiaki Nakano",
year = "2000",
month = "11",
day = "20",
language = "English",
volume = "39",
pages = "6158--6164",
journal = "Applied Optics",
issn = "0003-6935",
publisher = "The Optical Society",
number = "33",

}

TY - JOUR

T1 - Demonstration of an optical isolator with a semiconductor guiding layer that was obtained by use of a nonreciprocal phase shift

AU - Yokoi, Hideki

AU - Mizumoto, Tetsuya

AU - Shinjo, Nobuhiro

AU - Futakuchi, Naoki

AU - Nakano, Yoshiaki

PY - 2000/11/20

Y1 - 2000/11/20

N2 - We present the experimental study of an optical isolator with a semiconductor guiding layer that was obtained by use of a nonreciprocal phase shift. The isolator is equipped with an optical interferometer composed of tapered couplers, nonreciprocal phase shifters, and a reciprocal phase shifter. The nonreciprocal phase shifter was constructed by wafer direct bonding between the semiconductor guiding layer and the magneto-optic cladding layer. The isolator, designed for the 1.55-μm wavelength, was fabricated to investigate the characteristics of each component. By applying an external magnetic field to the nonreciprocal phase shifter, we achieved an isolation ratio of approximately 4.9 dB in the interferometric isolator.

AB - We present the experimental study of an optical isolator with a semiconductor guiding layer that was obtained by use of a nonreciprocal phase shift. The isolator is equipped with an optical interferometer composed of tapered couplers, nonreciprocal phase shifters, and a reciprocal phase shifter. The nonreciprocal phase shifter was constructed by wafer direct bonding between the semiconductor guiding layer and the magneto-optic cladding layer. The isolator, designed for the 1.55-μm wavelength, was fabricated to investigate the characteristics of each component. By applying an external magnetic field to the nonreciprocal phase shifter, we achieved an isolation ratio of approximately 4.9 dB in the interferometric isolator.

UR - http://www.scopus.com/inward/record.url?scp=0000969503&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0000969503&partnerID=8YFLogxK

M3 - Article

C2 - 18354623

AN - SCOPUS:0000969503

VL - 39

SP - 6158

EP - 6164

JO - Applied Optics

JF - Applied Optics

SN - 0003-6935

IS - 33

ER -