Abstract
Undoped AlInGaNGaN heterostructure field-effect transistors (HFETs) have been demonstrated on sapphire substrate. The maximum drain current of 758 mAmm and extrinsic transconductance of 123 mSmm were obtained from the device with 2 μm gate length and 15 μm gate width. Such performance was comparable to that of a conventional modulation-doped (MOD) AlGaNGaN HFET fabricated at same the condition. In spite of the high-density two-dimentional electron gas formed at the heterointerface, the AlInGaNGaN HFET structure showed relatively low Hall mobility (689 cm2 V s at 300 K), which was due to the high concentration background doping in the undoped AlInGaN barrier region. Encouragingly, both the gate leakage current and drain current collapse showed lower values than that of the MOD-AlGaNGaN HFET, which implied the potential application of quaternary AlInGaN to high-power and high-frequency devices.
| Original language | English |
|---|---|
| Article number | 223510 |
| Pages (from-to) | 1-3 |
| Number of pages | 3 |
| Journal | Applied Physics Letters |
| Volume | 86 |
| Issue number | 22 |
| DOIs | |
| Publication status | Published - 2005 |
| Externally published | Yes |
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ASJC Scopus subject areas
- Physics and Astronomy (miscellaneous)
Cite this
Demonstration of undoped quaternary AlInGaNGaN heterostructure field-effect transistor on sapphire substrate. / Liu, Y.; Jiang, H.; Arulkumaran, S.; Egawa, T.; Zhang, B.; Ishikawa, Hiroyasu.
In: Applied Physics Letters, Vol. 86, No. 22, 223510, 2005, p. 1-3.Research output: Contribution to journal › Article
}
TY - JOUR
T1 - Demonstration of undoped quaternary AlInGaNGaN heterostructure field-effect transistor on sapphire substrate
AU - Liu, Y.
AU - Jiang, H.
AU - Arulkumaran, S.
AU - Egawa, T.
AU - Zhang, B.
AU - Ishikawa, Hiroyasu
PY - 2005
Y1 - 2005
N2 - Undoped AlInGaNGaN heterostructure field-effect transistors (HFETs) have been demonstrated on sapphire substrate. The maximum drain current of 758 mAmm and extrinsic transconductance of 123 mSmm were obtained from the device with 2 μm gate length and 15 μm gate width. Such performance was comparable to that of a conventional modulation-doped (MOD) AlGaNGaN HFET fabricated at same the condition. In spite of the high-density two-dimentional electron gas formed at the heterointerface, the AlInGaNGaN HFET structure showed relatively low Hall mobility (689 cm2 V s at 300 K), which was due to the high concentration background doping in the undoped AlInGaN barrier region. Encouragingly, both the gate leakage current and drain current collapse showed lower values than that of the MOD-AlGaNGaN HFET, which implied the potential application of quaternary AlInGaN to high-power and high-frequency devices.
AB - Undoped AlInGaNGaN heterostructure field-effect transistors (HFETs) have been demonstrated on sapphire substrate. The maximum drain current of 758 mAmm and extrinsic transconductance of 123 mSmm were obtained from the device with 2 μm gate length and 15 μm gate width. Such performance was comparable to that of a conventional modulation-doped (MOD) AlGaNGaN HFET fabricated at same the condition. In spite of the high-density two-dimentional electron gas formed at the heterointerface, the AlInGaNGaN HFET structure showed relatively low Hall mobility (689 cm2 V s at 300 K), which was due to the high concentration background doping in the undoped AlInGaN barrier region. Encouragingly, both the gate leakage current and drain current collapse showed lower values than that of the MOD-AlGaNGaN HFET, which implied the potential application of quaternary AlInGaN to high-power and high-frequency devices.
UR - http://www.scopus.com/inward/record.url?scp=20844450872&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=20844450872&partnerID=8YFLogxK
U2 - 10.1063/1.1942643
DO - 10.1063/1.1942643
M3 - Article
AN - SCOPUS:20844450872
VL - 86
SP - 1
EP - 3
JO - Applied Physics Letters
JF - Applied Physics Letters
SN - 0003-6951
IS - 22
M1 - 223510
ER -