Demonstration of undoped quaternary AlInGaNGaN heterostructure field-effect transistor on sapphire substrate

Y. Liu, H. Jiang, S. Arulkumaran, T. Egawa, B. Zhang, Hiroyasu Ishikawa

Research output: Contribution to journalArticle

45 Citations (Scopus)

Abstract

Undoped AlInGaNGaN heterostructure field-effect transistors (HFETs) have been demonstrated on sapphire substrate. The maximum drain current of 758 mAmm and extrinsic transconductance of 123 mSmm were obtained from the device with 2 μm gate length and 15 μm gate width. Such performance was comparable to that of a conventional modulation-doped (MOD) AlGaNGaN HFET fabricated at same the condition. In spite of the high-density two-dimentional electron gas formed at the heterointerface, the AlInGaNGaN HFET structure showed relatively low Hall mobility (689 cm2 V s at 300 K), which was due to the high concentration background doping in the undoped AlInGaN barrier region. Encouragingly, both the gate leakage current and drain current collapse showed lower values than that of the MOD-AlGaNGaN HFET, which implied the potential application of quaternary AlInGaN to high-power and high-frequency devices.

Original languageEnglish
Article number223510
Pages (from-to)1-3
Number of pages3
JournalApplied Physics Letters
Volume86
Issue number22
DOIs
Publication statusPublished - 2005
Externally publishedYes

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sapphire
field effect transistors
modulation
transconductance
electron gas
leakage

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Cite this

Demonstration of undoped quaternary AlInGaNGaN heterostructure field-effect transistor on sapphire substrate. / Liu, Y.; Jiang, H.; Arulkumaran, S.; Egawa, T.; Zhang, B.; Ishikawa, Hiroyasu.

In: Applied Physics Letters, Vol. 86, No. 22, 223510, 2005, p. 1-3.

Research output: Contribution to journalArticle

Liu, Y. ; Jiang, H. ; Arulkumaran, S. ; Egawa, T. ; Zhang, B. ; Ishikawa, Hiroyasu. / Demonstration of undoped quaternary AlInGaNGaN heterostructure field-effect transistor on sapphire substrate. In: Applied Physics Letters. 2005 ; Vol. 86, No. 22. pp. 1-3.
@article{dab9cd26b60244249e0d59db42c1529d,
title = "Demonstration of undoped quaternary AlInGaNGaN heterostructure field-effect transistor on sapphire substrate",
abstract = "Undoped AlInGaNGaN heterostructure field-effect transistors (HFETs) have been demonstrated on sapphire substrate. The maximum drain current of 758 mAmm and extrinsic transconductance of 123 mSmm were obtained from the device with 2 μm gate length and 15 μm gate width. Such performance was comparable to that of a conventional modulation-doped (MOD) AlGaNGaN HFET fabricated at same the condition. In spite of the high-density two-dimentional electron gas formed at the heterointerface, the AlInGaNGaN HFET structure showed relatively low Hall mobility (689 cm2 V s at 300 K), which was due to the high concentration background doping in the undoped AlInGaN barrier region. Encouragingly, both the gate leakage current and drain current collapse showed lower values than that of the MOD-AlGaNGaN HFET, which implied the potential application of quaternary AlInGaN to high-power and high-frequency devices.",
author = "Y. Liu and H. Jiang and S. Arulkumaran and T. Egawa and B. Zhang and Hiroyasu Ishikawa",
year = "2005",
doi = "10.1063/1.1942643",
language = "English",
volume = "86",
pages = "1--3",
journal = "Applied Physics Letters",
issn = "0003-6951",
publisher = "American Institute of Physics Publising LLC",
number = "22",

}

TY - JOUR

T1 - Demonstration of undoped quaternary AlInGaNGaN heterostructure field-effect transistor on sapphire substrate

AU - Liu, Y.

AU - Jiang, H.

AU - Arulkumaran, S.

AU - Egawa, T.

AU - Zhang, B.

AU - Ishikawa, Hiroyasu

PY - 2005

Y1 - 2005

N2 - Undoped AlInGaNGaN heterostructure field-effect transistors (HFETs) have been demonstrated on sapphire substrate. The maximum drain current of 758 mAmm and extrinsic transconductance of 123 mSmm were obtained from the device with 2 μm gate length and 15 μm gate width. Such performance was comparable to that of a conventional modulation-doped (MOD) AlGaNGaN HFET fabricated at same the condition. In spite of the high-density two-dimentional electron gas formed at the heterointerface, the AlInGaNGaN HFET structure showed relatively low Hall mobility (689 cm2 V s at 300 K), which was due to the high concentration background doping in the undoped AlInGaN barrier region. Encouragingly, both the gate leakage current and drain current collapse showed lower values than that of the MOD-AlGaNGaN HFET, which implied the potential application of quaternary AlInGaN to high-power and high-frequency devices.

AB - Undoped AlInGaNGaN heterostructure field-effect transistors (HFETs) have been demonstrated on sapphire substrate. The maximum drain current of 758 mAmm and extrinsic transconductance of 123 mSmm were obtained from the device with 2 μm gate length and 15 μm gate width. Such performance was comparable to that of a conventional modulation-doped (MOD) AlGaNGaN HFET fabricated at same the condition. In spite of the high-density two-dimentional electron gas formed at the heterointerface, the AlInGaNGaN HFET structure showed relatively low Hall mobility (689 cm2 V s at 300 K), which was due to the high concentration background doping in the undoped AlInGaN barrier region. Encouragingly, both the gate leakage current and drain current collapse showed lower values than that of the MOD-AlGaNGaN HFET, which implied the potential application of quaternary AlInGaN to high-power and high-frequency devices.

UR - http://www.scopus.com/inward/record.url?scp=20844450872&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=20844450872&partnerID=8YFLogxK

U2 - 10.1063/1.1942643

DO - 10.1063/1.1942643

M3 - Article

AN - SCOPUS:20844450872

VL - 86

SP - 1

EP - 3

JO - Applied Physics Letters

JF - Applied Physics Letters

SN - 0003-6951

IS - 22

M1 - 223510

ER -