Abstract
The dependence on dimensionality of the excitonic optical nonlinearity and the figures of merit in quantum confined structures is clarified for the resonant third-order optical nonlinearity. An important parameter which determines the dimensionality dependence of the figures of merit is found to be the ratio of the homogeneous linewidth to the exciton binding energy or the ratio of the exciton coherence length to the exciton Bohr radius. It is predicted that for the III-V compound semiconductors the exciton confinement in low-dimensional structures (d=1,2 d:dimensionality) is favorable for enhancing the figures of merit, whereas for the I-VII compound semiconductors the exciton confinement does not always improve the figures of merit.
| Original language | English |
|---|---|
| Pages (from-to) | 279-282 |
| Number of pages | 4 |
| Journal | Solid State Communications |
| Volume | 78 |
| Issue number | 4 |
| DOIs | |
| Publication status | Published - 1991 |
| Externally published | Yes |
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ASJC Scopus subject areas
- Materials Science(all)
- Condensed Matter Physics
Cite this
Dependence on dimensionality of excitonic optical nonlinearity in quantum confined structures. / Takagahara, Toshihide.
In: Solid State Communications, Vol. 78, No. 4, 1991, p. 279-282.Research output: Contribution to journal › Article
}
TY - JOUR
T1 - Dependence on dimensionality of excitonic optical nonlinearity in quantum confined structures
AU - Takagahara, Toshihide
PY - 1991
Y1 - 1991
N2 - The dependence on dimensionality of the excitonic optical nonlinearity and the figures of merit in quantum confined structures is clarified for the resonant third-order optical nonlinearity. An important parameter which determines the dimensionality dependence of the figures of merit is found to be the ratio of the homogeneous linewidth to the exciton binding energy or the ratio of the exciton coherence length to the exciton Bohr radius. It is predicted that for the III-V compound semiconductors the exciton confinement in low-dimensional structures (d=1,2 d:dimensionality) is favorable for enhancing the figures of merit, whereas for the I-VII compound semiconductors the exciton confinement does not always improve the figures of merit.
AB - The dependence on dimensionality of the excitonic optical nonlinearity and the figures of merit in quantum confined structures is clarified for the resonant third-order optical nonlinearity. An important parameter which determines the dimensionality dependence of the figures of merit is found to be the ratio of the homogeneous linewidth to the exciton binding energy or the ratio of the exciton coherence length to the exciton Bohr radius. It is predicted that for the III-V compound semiconductors the exciton confinement in low-dimensional structures (d=1,2 d:dimensionality) is favorable for enhancing the figures of merit, whereas for the I-VII compound semiconductors the exciton confinement does not always improve the figures of merit.
UR - http://www.scopus.com/inward/record.url?scp=0026140641&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=0026140641&partnerID=8YFLogxK
U2 - 10.1016/0038-1098(91)90197-4
DO - 10.1016/0038-1098(91)90197-4
M3 - Article
AN - SCOPUS:0026140641
VL - 78
SP - 279
EP - 282
JO - Solid State Communications
JF - Solid State Communications
SN - 0038-1098
IS - 4
ER -