Depth profiles of the Fermi level at an amorphous-carbon nitride/SiO2/n-type-Si heterojunction interface obtained by Kelvin probe force microscopy

Takahiro Ishizaki, Nagahiro Saito, Riichiro Ohta, Osamu Takai

Research output: Contribution to journalArticle

1 Citation (Scopus)

Abstract

To explore the work function of a typical amorphous-CN film containing a nitrogen concentration of 23.5 at.%, surface potential images were acquired using Kelvin probe force microscopy. Based on the Fermi level of the n-type Si and the contact potential difference between the amorphous-CN film and the n-Si substrate, the work function of the amorphous-CN film was estimated to be 5.2 ± 0.2 eV below its vacuum level. Using the surface potential depth profile for an etched amorphous-CN film, energy diagrams of the amorphous-CN/SiO2/n-Si interface were constructed based on the positional relationship of the Fermi level. These band diagrams showed that band bending occurred at the amorphous-CN/SiO2/n-Si interface despite the Fermi level pinning effect of surface trapping due to the SiO2 insulator layer.

Original languageEnglish
Pages (from-to)1378-1382
Number of pages5
JournalDiamond and Related Materials
Volume15
Issue number9
DOIs
Publication statusPublished - 2006 Sep
Externally publishedYes

Fingerprint

carbon nitrides
Carbon nitride
Amorphous carbon
Amorphous films
Fermi level
Heterojunctions
heterojunctions
Microscopic examination
microscopy
probes
Surface potential
profiles
diagrams
contact potentials
Nitrogen
trapping
insulators
Vacuum
nitrogen
vacuum

Keywords

  • Amorphous-carbon nitride
  • Kelvin probe force microscopy
  • Work function

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Materials Chemistry
  • Surfaces, Coatings and Films
  • Surfaces and Interfaces

Cite this

Depth profiles of the Fermi level at an amorphous-carbon nitride/SiO2/n-type-Si heterojunction interface obtained by Kelvin probe force microscopy. / Ishizaki, Takahiro; Saito, Nagahiro; Ohta, Riichiro; Takai, Osamu.

In: Diamond and Related Materials, Vol. 15, No. 9, 09.2006, p. 1378-1382.

Research output: Contribution to journalArticle

@article{96f0e0085b8a49ac8589c7e5c06700b0,
title = "Depth profiles of the Fermi level at an amorphous-carbon nitride/SiO2/n-type-Si heterojunction interface obtained by Kelvin probe force microscopy",
abstract = "To explore the work function of a typical amorphous-CN film containing a nitrogen concentration of 23.5 at.{\%}, surface potential images were acquired using Kelvin probe force microscopy. Based on the Fermi level of the n-type Si and the contact potential difference between the amorphous-CN film and the n-Si substrate, the work function of the amorphous-CN film was estimated to be 5.2 ± 0.2 eV below its vacuum level. Using the surface potential depth profile for an etched amorphous-CN film, energy diagrams of the amorphous-CN/SiO2/n-Si interface were constructed based on the positional relationship of the Fermi level. These band diagrams showed that band bending occurred at the amorphous-CN/SiO2/n-Si interface despite the Fermi level pinning effect of surface trapping due to the SiO2 insulator layer.",
keywords = "Amorphous-carbon nitride, Kelvin probe force microscopy, Work function",
author = "Takahiro Ishizaki and Nagahiro Saito and Riichiro Ohta and Osamu Takai",
year = "2006",
month = "9",
doi = "10.1016/j.diamond.2005.10.001",
language = "English",
volume = "15",
pages = "1378--1382",
journal = "Diamond and Related Materials",
issn = "0925-9635",
publisher = "Elsevier BV",
number = "9",

}

TY - JOUR

T1 - Depth profiles of the Fermi level at an amorphous-carbon nitride/SiO2/n-type-Si heterojunction interface obtained by Kelvin probe force microscopy

AU - Ishizaki, Takahiro

AU - Saito, Nagahiro

AU - Ohta, Riichiro

AU - Takai, Osamu

PY - 2006/9

Y1 - 2006/9

N2 - To explore the work function of a typical amorphous-CN film containing a nitrogen concentration of 23.5 at.%, surface potential images were acquired using Kelvin probe force microscopy. Based on the Fermi level of the n-type Si and the contact potential difference between the amorphous-CN film and the n-Si substrate, the work function of the amorphous-CN film was estimated to be 5.2 ± 0.2 eV below its vacuum level. Using the surface potential depth profile for an etched amorphous-CN film, energy diagrams of the amorphous-CN/SiO2/n-Si interface were constructed based on the positional relationship of the Fermi level. These band diagrams showed that band bending occurred at the amorphous-CN/SiO2/n-Si interface despite the Fermi level pinning effect of surface trapping due to the SiO2 insulator layer.

AB - To explore the work function of a typical amorphous-CN film containing a nitrogen concentration of 23.5 at.%, surface potential images were acquired using Kelvin probe force microscopy. Based on the Fermi level of the n-type Si and the contact potential difference between the amorphous-CN film and the n-Si substrate, the work function of the amorphous-CN film was estimated to be 5.2 ± 0.2 eV below its vacuum level. Using the surface potential depth profile for an etched amorphous-CN film, energy diagrams of the amorphous-CN/SiO2/n-Si interface were constructed based on the positional relationship of the Fermi level. These band diagrams showed that band bending occurred at the amorphous-CN/SiO2/n-Si interface despite the Fermi level pinning effect of surface trapping due to the SiO2 insulator layer.

KW - Amorphous-carbon nitride

KW - Kelvin probe force microscopy

KW - Work function

UR - http://www.scopus.com/inward/record.url?scp=33746581938&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=33746581938&partnerID=8YFLogxK

U2 - 10.1016/j.diamond.2005.10.001

DO - 10.1016/j.diamond.2005.10.001

M3 - Article

AN - SCOPUS:33746581938

VL - 15

SP - 1378

EP - 1382

JO - Diamond and Related Materials

JF - Diamond and Related Materials

SN - 0925-9635

IS - 9

ER -