Depth profiles of the Fermi level at an amorphous-carbon nitride/SiO2/n-type-Si heterojunction interface obtained by Kelvin probe force microscopy

Takahiro Ishizaki, Nagahiro Saito, Riichiro Ohta, Osamu Takai

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Abstract

To explore the work function of a typical amorphous-CN film containing a nitrogen concentration of 23.5 at.%, surface potential images were acquired using Kelvin probe force microscopy. Based on the Fermi level of the n-type Si and the contact potential difference between the amorphous-CN film and the n-Si substrate, the work function of the amorphous-CN film was estimated to be 5.2 ± 0.2 eV below its vacuum level. Using the surface potential depth profile for an etched amorphous-CN film, energy diagrams of the amorphous-CN/SiO2/n-Si interface were constructed based on the positional relationship of the Fermi level. These band diagrams showed that band bending occurred at the amorphous-CN/SiO2/n-Si interface despite the Fermi level pinning effect of surface trapping due to the SiO2 insulator layer.

Original languageEnglish
Pages (from-to)1378-1382
Number of pages5
JournalDiamond and Related Materials
Volume15
Issue number9
DOIs
Publication statusPublished - 2006 Sep 1

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Keywords

  • Amorphous-carbon nitride
  • Kelvin probe force microscopy
  • Work function

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Chemistry(all)
  • Mechanical Engineering
  • Materials Chemistry
  • Electrical and Electronic Engineering

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