Abstract
To explore the work function of a typical amorphous-CN film containing a nitrogen concentration of 23.5 at.%, surface potential images were acquired using Kelvin probe force microscopy. Based on the Fermi level of the n-type Si and the contact potential difference between the amorphous-CN film and the n-Si substrate, the work function of the amorphous-CN film was estimated to be 5.2 ± 0.2 eV below its vacuum level. Using the surface potential depth profile for an etched amorphous-CN film, energy diagrams of the amorphous-CN/SiO2/n-Si interface were constructed based on the positional relationship of the Fermi level. These band diagrams showed that band bending occurred at the amorphous-CN/SiO2/n-Si interface despite the Fermi level pinning effect of surface trapping due to the SiO2 insulator layer.
| Original language | English |
|---|---|
| Pages (from-to) | 1378-1382 |
| Number of pages | 5 |
| Journal | Diamond and Related Materials |
| Volume | 15 |
| Issue number | 9 |
| DOIs | |
| Publication status | Published - 2006 Sep |
| Externally published | Yes |
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Keywords
- Amorphous-carbon nitride
- Kelvin probe force microscopy
- Work function
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Materials Chemistry
- Surfaces, Coatings and Films
- Surfaces and Interfaces
Cite this
Depth profiles of the Fermi level at an amorphous-carbon nitride/SiO2/n-type-Si heterojunction interface obtained by Kelvin probe force microscopy. / Ishizaki, Takahiro; Saito, Nagahiro; Ohta, Riichiro; Takai, Osamu.
In: Diamond and Related Materials, Vol. 15, No. 9, 09.2006, p. 1378-1382.Research output: Contribution to journal › Article
}
TY - JOUR
T1 - Depth profiles of the Fermi level at an amorphous-carbon nitride/SiO2/n-type-Si heterojunction interface obtained by Kelvin probe force microscopy
AU - Ishizaki, Takahiro
AU - Saito, Nagahiro
AU - Ohta, Riichiro
AU - Takai, Osamu
PY - 2006/9
Y1 - 2006/9
N2 - To explore the work function of a typical amorphous-CN film containing a nitrogen concentration of 23.5 at.%, surface potential images were acquired using Kelvin probe force microscopy. Based on the Fermi level of the n-type Si and the contact potential difference between the amorphous-CN film and the n-Si substrate, the work function of the amorphous-CN film was estimated to be 5.2 ± 0.2 eV below its vacuum level. Using the surface potential depth profile for an etched amorphous-CN film, energy diagrams of the amorphous-CN/SiO2/n-Si interface were constructed based on the positional relationship of the Fermi level. These band diagrams showed that band bending occurred at the amorphous-CN/SiO2/n-Si interface despite the Fermi level pinning effect of surface trapping due to the SiO2 insulator layer.
AB - To explore the work function of a typical amorphous-CN film containing a nitrogen concentration of 23.5 at.%, surface potential images were acquired using Kelvin probe force microscopy. Based on the Fermi level of the n-type Si and the contact potential difference between the amorphous-CN film and the n-Si substrate, the work function of the amorphous-CN film was estimated to be 5.2 ± 0.2 eV below its vacuum level. Using the surface potential depth profile for an etched amorphous-CN film, energy diagrams of the amorphous-CN/SiO2/n-Si interface were constructed based on the positional relationship of the Fermi level. These band diagrams showed that band bending occurred at the amorphous-CN/SiO2/n-Si interface despite the Fermi level pinning effect of surface trapping due to the SiO2 insulator layer.
KW - Amorphous-carbon nitride
KW - Kelvin probe force microscopy
KW - Work function
UR - http://www.scopus.com/inward/record.url?scp=33746581938&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=33746581938&partnerID=8YFLogxK
U2 - 10.1016/j.diamond.2005.10.001
DO - 10.1016/j.diamond.2005.10.001
M3 - Article
AN - SCOPUS:33746581938
VL - 15
SP - 1378
EP - 1382
JO - Diamond and Related Materials
JF - Diamond and Related Materials
SN - 0925-9635
IS - 9
ER -