Depth profiles of the Fermi level at an amorphous-carbon nitride/SiO2/n-type-Si heterojunction interface obtained by Kelvin probe force microscopy

Takahiro Ishizaki; Nagahiro Saito; Riichiro Ohta; Osamu Takai

doi:10.1016/j.diamond.2005.10.001

Depth profiles of the Fermi level at an amorphous-carbon nitride/SiO₂/n-type-Si heterojunction interface obtained by Kelvin probe force microscopy

Takahiro Ishizaki, Nagahiro Saito, Riichiro Ohta, Osamu Takai

Research output: Contribution to journal › Article › peer-review

1 Citation (Scopus)

Abstract

To explore the work function of a typical amorphous-CN film containing a nitrogen concentration of 23.5 at.%, surface potential images were acquired using Kelvin probe force microscopy. Based on the Fermi level of the n-type Si and the contact potential difference between the amorphous-CN film and the n-Si substrate, the work function of the amorphous-CN film was estimated to be 5.2 ± 0.2 eV below its vacuum level. Using the surface potential depth profile for an etched amorphous-CN film, energy diagrams of the amorphous-CN/SiO₂/n-Si interface were constructed based on the positional relationship of the Fermi level. These band diagrams showed that band bending occurred at the amorphous-CN/SiO₂/n-Si interface despite the Fermi level pinning effect of surface trapping due to the SiO₂ insulator layer.

Original language	English
Pages (from-to)	1378-1382
Number of pages	5
Journal	Diamond and Related Materials
Volume	15
Issue number	9
DOIs	https://doi.org/10.1016/j.diamond.2005.10.001
Publication status	Published - 2006 Sep 1
Externally published	Yes

Keywords

Amorphous-carbon nitride
Kelvin probe force microscopy
Work function

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Chemistry(all)
Mechanical Engineering
Materials Chemistry
Electrical and Electronic Engineering

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10.1016/j.diamond.2005.10.001

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title = "Depth profiles of the Fermi level at an amorphous-carbon nitride/SiO2/n-type-Si heterojunction interface obtained by Kelvin probe force microscopy",

abstract = "To explore the work function of a typical amorphous-CN film containing a nitrogen concentration of 23.5 at.%, surface potential images were acquired using Kelvin probe force microscopy. Based on the Fermi level of the n-type Si and the contact potential difference between the amorphous-CN film and the n-Si substrate, the work function of the amorphous-CN film was estimated to be 5.2 ± 0.2 eV below its vacuum level. Using the surface potential depth profile for an etched amorphous-CN film, energy diagrams of the amorphous-CN/SiO2/n-Si interface were constructed based on the positional relationship of the Fermi level. These band diagrams showed that band bending occurred at the amorphous-CN/SiO2/n-Si interface despite the Fermi level pinning effect of surface trapping due to the SiO2 insulator layer.",

keywords = "Amorphous-carbon nitride, Kelvin probe force microscopy, Work function",

author = "Takahiro Ishizaki and Nagahiro Saito and Riichiro Ohta and Osamu Takai",

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T1 - Depth profiles of the Fermi level at an amorphous-carbon nitride/SiO2/n-type-Si heterojunction interface obtained by Kelvin probe force microscopy

AU - Ishizaki, Takahiro

AU - Saito, Nagahiro

AU - Ohta, Riichiro

AU - Takai, Osamu

PY - 2006/9/1

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N2 - To explore the work function of a typical amorphous-CN film containing a nitrogen concentration of 23.5 at.%, surface potential images were acquired using Kelvin probe force microscopy. Based on the Fermi level of the n-type Si and the contact potential difference between the amorphous-CN film and the n-Si substrate, the work function of the amorphous-CN film was estimated to be 5.2 ± 0.2 eV below its vacuum level. Using the surface potential depth profile for an etched amorphous-CN film, energy diagrams of the amorphous-CN/SiO2/n-Si interface were constructed based on the positional relationship of the Fermi level. These band diagrams showed that band bending occurred at the amorphous-CN/SiO2/n-Si interface despite the Fermi level pinning effect of surface trapping due to the SiO2 insulator layer.

AB - To explore the work function of a typical amorphous-CN film containing a nitrogen concentration of 23.5 at.%, surface potential images were acquired using Kelvin probe force microscopy. Based on the Fermi level of the n-type Si and the contact potential difference between the amorphous-CN film and the n-Si substrate, the work function of the amorphous-CN film was estimated to be 5.2 ± 0.2 eV below its vacuum level. Using the surface potential depth profile for an etched amorphous-CN film, energy diagrams of the amorphous-CN/SiO2/n-Si interface were constructed based on the positional relationship of the Fermi level. These band diagrams showed that band bending occurred at the amorphous-CN/SiO2/n-Si interface despite the Fermi level pinning effect of surface trapping due to the SiO2 insulator layer.

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