Design and implementation methodology of energy-efficient Standard Cell Memory with optimized Body-Bias separation in Silicon-on-Thin-BOX

Yusuke Yoshida, Kimiyoshi Usami

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Citation (Scopus)

Abstract

This paper describes a design of energy-efficient Standard Cell Memory (SCM) using Silicon-on-Thin-BOX (SOTB). We present automatic place and routing (P&R) methodology for optimal body-bias separation (BBS) for SCM, which enables to apply different body bias voltages to latches and to other peripheral circuits within SCM. Simulation results demonstrated that our approach allows us to design SCM with 40% smaller energy dissipation at the energy minimum voltage as compared to the conventional design flow. For the process and temperature variations, Adaptive Body Bias (ABB) for SCM with our BBS provided 70% smaller leakage energy than ABB for the conventional SCM, while achieving the same clock frequency.

Original languageEnglish
Title of host publicationJoint International EUROSOl Workshop and International Conference on Ultimate Integration on Silicon-ULIS, EUROSOI-ULIS 2017 - Proceedings
EditorsAndroula G. Nassiopoulou, Panagiotis Sarafis
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages43-46
Number of pages4
ISBN (Electronic)9781509053131
DOIs
Publication statusPublished - 2017 Jun 29
Event2017 Joint International EUROSOl Workshop and International Conference on Ultimate Integration on Silicon-ULIS, EUROSOI-ULIS 2017 - Athens, Greece
Duration: 2017 Apr 32017 Apr 5

Publication series

NameJoint International EUROSOl Workshop and International Conference on Ultimate Integration on Silicon-ULIS, EUROSOI-ULIS 2017 - Proceedings

Other

Other2017 Joint International EUROSOl Workshop and International Conference on Ultimate Integration on Silicon-ULIS, EUROSOI-ULIS 2017
Country/TerritoryGreece
CityAthens
Period17/4/317/4/5

Keywords

  • Body bias
  • Energy-Efficient
  • Silicon-on-Thin-BOX(SOTB)
  • Standard Cell Memory
  • Ultra-low voltage

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Instrumentation
  • Electrical and Electronic Engineering

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