Design considerations for millimeter-wave power HBT's based on gain performance analysis

ShiN'Ichi Tanaka, Yasushi Amamiya, Seiichi Murakami, Hidenori Shimawaki, Norio Goto, Yoichiro Takayama, Kazuhiko Honjo

Research output: Contribution to journalArticle

13 Citations (Scopus)

Abstract

Critical design issues involved in optimizing milli-meter-wave power HBT's are described. Gain analysis of common-emitter (CE) and common-base (CB) HBT's is performed using analytical formulas derived based on a practical HBT model. While CB HBT's have superior maximum-gain at very high frequencies, their frequency limit is found to be determined by the carrier transit time delay. Thus, to fully exploit the potential gain in a CB HBT, it is essential to maintain a high FT even at high collector voltages. The advantage of using CB HBT's in a multifingered device geometry is also discussed. Unlike CE HBT's, CB HBT's are capable of maintaining a high gain even if the device size is scaled up by increasing the number of emitter-fingers. Moreover, it is found that reducing the wire parasitic capacitance allows emitter ballasting resistance to be used without affecting the gain. Fabrication of HBT's based on these design considerations led to excellent power performance in a CB unit-cell HBT at 25-26 GHz, featuring output power of 740 m W and power-added efficiency of 42%.

Original languageEnglish
Pages (from-to)36-44
Number of pages9
JournalIEEE Transactions on Electron Devices
Volume45
Issue number1
DOIs
Publication statusPublished - 1998
Externally publishedYes

Fingerprint

Wave power
Heterojunction bipolar transistors
Millimeter waves
millimeter waves
emitters
very high frequencies
power efficiency
transit time
high gain
accumulators
time lag
capacitance
wire
fabrication
output
electric potential
geometry
cells
Time delay
Capacitance

Keywords

  • Heterojunction bipolar transistors
  • Millimeter-wave power bipolar transistors

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Physics and Astronomy (miscellaneous)

Cite this

Design considerations for millimeter-wave power HBT's based on gain performance analysis. / Tanaka, ShiN'Ichi; Amamiya, Yasushi; Murakami, Seiichi; Shimawaki, Hidenori; Goto, Norio; Takayama, Yoichiro; Honjo, Kazuhiko.

In: IEEE Transactions on Electron Devices, Vol. 45, No. 1, 1998, p. 36-44.

Research output: Contribution to journalArticle

Tanaka, SI, Amamiya, Y, Murakami, S, Shimawaki, H, Goto, N, Takayama, Y & Honjo, K 1998, 'Design considerations for millimeter-wave power HBT's based on gain performance analysis', IEEE Transactions on Electron Devices, vol. 45, no. 1, pp. 36-44. https://doi.org/10.1109/16.658809
Tanaka, ShiN'Ichi ; Amamiya, Yasushi ; Murakami, Seiichi ; Shimawaki, Hidenori ; Goto, Norio ; Takayama, Yoichiro ; Honjo, Kazuhiko. / Design considerations for millimeter-wave power HBT's based on gain performance analysis. In: IEEE Transactions on Electron Devices. 1998 ; Vol. 45, No. 1. pp. 36-44.
@article{b8fe834ce896435eacdefaa0b3f27285,
title = "Design considerations for millimeter-wave power HBT's based on gain performance analysis",
abstract = "Critical design issues involved in optimizing milli-meter-wave power HBT's are described. Gain analysis of common-emitter (CE) and common-base (CB) HBT's is performed using analytical formulas derived based on a practical HBT model. While CB HBT's have superior maximum-gain at very high frequencies, their frequency limit is found to be determined by the carrier transit time delay. Thus, to fully exploit the potential gain in a CB HBT, it is essential to maintain a high FT even at high collector voltages. The advantage of using CB HBT's in a multifingered device geometry is also discussed. Unlike CE HBT's, CB HBT's are capable of maintaining a high gain even if the device size is scaled up by increasing the number of emitter-fingers. Moreover, it is found that reducing the wire parasitic capacitance allows emitter ballasting resistance to be used without affecting the gain. Fabrication of HBT's based on these design considerations led to excellent power performance in a CB unit-cell HBT at 25-26 GHz, featuring output power of 740 m W and power-added efficiency of 42{\%}.",
keywords = "Heterojunction bipolar transistors, Millimeter-wave power bipolar transistors",
author = "ShiN'Ichi Tanaka and Yasushi Amamiya and Seiichi Murakami and Hidenori Shimawaki and Norio Goto and Yoichiro Takayama and Kazuhiko Honjo",
year = "1998",
doi = "10.1109/16.658809",
language = "English",
volume = "45",
pages = "36--44",
journal = "IEEE Transactions on Electron Devices",
issn = "0018-9383",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
number = "1",

}

TY - JOUR

T1 - Design considerations for millimeter-wave power HBT's based on gain performance analysis

AU - Tanaka, ShiN'Ichi

AU - Amamiya, Yasushi

AU - Murakami, Seiichi

AU - Shimawaki, Hidenori

AU - Goto, Norio

AU - Takayama, Yoichiro

AU - Honjo, Kazuhiko

PY - 1998

Y1 - 1998

N2 - Critical design issues involved in optimizing milli-meter-wave power HBT's are described. Gain analysis of common-emitter (CE) and common-base (CB) HBT's is performed using analytical formulas derived based on a practical HBT model. While CB HBT's have superior maximum-gain at very high frequencies, their frequency limit is found to be determined by the carrier transit time delay. Thus, to fully exploit the potential gain in a CB HBT, it is essential to maintain a high FT even at high collector voltages. The advantage of using CB HBT's in a multifingered device geometry is also discussed. Unlike CE HBT's, CB HBT's are capable of maintaining a high gain even if the device size is scaled up by increasing the number of emitter-fingers. Moreover, it is found that reducing the wire parasitic capacitance allows emitter ballasting resistance to be used without affecting the gain. Fabrication of HBT's based on these design considerations led to excellent power performance in a CB unit-cell HBT at 25-26 GHz, featuring output power of 740 m W and power-added efficiency of 42%.

AB - Critical design issues involved in optimizing milli-meter-wave power HBT's are described. Gain analysis of common-emitter (CE) and common-base (CB) HBT's is performed using analytical formulas derived based on a practical HBT model. While CB HBT's have superior maximum-gain at very high frequencies, their frequency limit is found to be determined by the carrier transit time delay. Thus, to fully exploit the potential gain in a CB HBT, it is essential to maintain a high FT even at high collector voltages. The advantage of using CB HBT's in a multifingered device geometry is also discussed. Unlike CE HBT's, CB HBT's are capable of maintaining a high gain even if the device size is scaled up by increasing the number of emitter-fingers. Moreover, it is found that reducing the wire parasitic capacitance allows emitter ballasting resistance to be used without affecting the gain. Fabrication of HBT's based on these design considerations led to excellent power performance in a CB unit-cell HBT at 25-26 GHz, featuring output power of 740 m W and power-added efficiency of 42%.

KW - Heterojunction bipolar transistors

KW - Millimeter-wave power bipolar transistors

UR - http://www.scopus.com/inward/record.url?scp=0031673609&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0031673609&partnerID=8YFLogxK

U2 - 10.1109/16.658809

DO - 10.1109/16.658809

M3 - Article

AN - SCOPUS:0031673609

VL - 45

SP - 36

EP - 44

JO - IEEE Transactions on Electron Devices

JF - IEEE Transactions on Electron Devices

SN - 0018-9383

IS - 1

ER -