Development of the large area silicon PIN diode with 2 mm-thick depletion layer for hard X-ray detector (HXD) on-board ASTRO-E

M. Sugizaki, S. Kubo, T. Murakami, N. Ota, H. Ozawa, T. Takahashi, H. Kaneda, N. Iyomoto, T. Kamae, M. Kokubun, Aya Kubota, K. Makishima, T. Tamura, M. Tashiro, K. Koyama, H. Tsunemi

Research output: Chapter in Book/Report/Conference proceedingConference contribution

10 Citations (Scopus)

Abstract

ASTRO-E is the next Japanese X-ray satellite to be launched in the year of 2000. It carries three high-energy astrophysical experiments, including the Hard X-ray Detector (HXD) which is unique in covering the wide energy band from 10 keV to 700 keV with an extremely low background. The HXD is a compound-eye detector, employing 16 GSO/BGO well-type phoswich scintillation counters together with 64 silicon PIN detectors. The scintillation counters cover an energy range of 40-700 keV, while the PIN diodes fill the intermediate energy range from 10 keV to 70 keV with an energy resolution about 3 keV. In this paper, we report on the developments of the large area, thick silicon PIN diodes. In order to achieve a high quantum efficiency up to 70 keV with a high energy resolution, we utilize a double stack of silicon PIN diodes, each 20 × 20 mm 2 in size and 2 mm thick. Signals from the two diodes are summed into a single output. Four of these stacks (or eight diodes) are placed inside the deep BGO active-shield well of a phoswich counter, to achieve an extremely low background environment. Thus, the HXD utilizes 64 stacked silicon PIN detectors, achieving a total geometrical collecting area of 256 cm 2. We have developed the 2 mm thick silicon PIN diodes which have a low leakage current, a low capacitance, and a high breakdown voltage to meet the requirements of our goal. Through various trials in fabricating PIN diodes with different structures, we have found optimal design parameters, such as mask design of the surface p + layer and the implantation process.

Original languageEnglish
Title of host publicationProceedings of SPIE - The International Society for Optical Engineering
EditorsR.B. Hoover, F.P. Doty
Pages244-253
Number of pages10
Volume3115
DOIs
Publication statusPublished - 1997
Externally publishedYes
EventHard X-Ray and Gamma-Ray Detector Physics, Optics, and Applications - San Diego, CA, United States
Duration: 1997 Jul 311997 Aug 1

Other

OtherHard X-Ray and Gamma-Ray Detector Physics, Optics, and Applications
CountryUnited States
CitySan Diego, CA
Period97/7/3197/8/1

Fingerprint

Diodes
depletion
diodes
Detectors
X rays
Silicon
detectors
silicon
x rays
Silicon detectors
Scintillation counters
scintillation counters
energy
Electric breakdown
Quantum efficiency
electrical faults
Leakage currents
Band structure
energy bands
Masks

Keywords

  • Hard X-ray detector
  • High purity Si material
  • Large area detector
  • Silicon PIN diode
  • X-ray astronomy

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Condensed Matter Physics

Cite this

Sugizaki, M., Kubo, S., Murakami, T., Ota, N., Ozawa, H., Takahashi, T., ... Tsunemi, H. (1997). Development of the large area silicon PIN diode with 2 mm-thick depletion layer for hard X-ray detector (HXD) on-board ASTRO-E. In R. B. Hoover, & F. P. Doty (Eds.), Proceedings of SPIE - The International Society for Optical Engineering (Vol. 3115, pp. 244-253) https://doi.org/10.1117/12.277691

Development of the large area silicon PIN diode with 2 mm-thick depletion layer for hard X-ray detector (HXD) on-board ASTRO-E. / Sugizaki, M.; Kubo, S.; Murakami, T.; Ota, N.; Ozawa, H.; Takahashi, T.; Kaneda, H.; Iyomoto, N.; Kamae, T.; Kokubun, M.; Kubota, Aya; Makishima, K.; Tamura, T.; Tashiro, M.; Koyama, K.; Tsunemi, H.

Proceedings of SPIE - The International Society for Optical Engineering. ed. / R.B. Hoover; F.P. Doty. Vol. 3115 1997. p. 244-253.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Sugizaki, M, Kubo, S, Murakami, T, Ota, N, Ozawa, H, Takahashi, T, Kaneda, H, Iyomoto, N, Kamae, T, Kokubun, M, Kubota, A, Makishima, K, Tamura, T, Tashiro, M, Koyama, K & Tsunemi, H 1997, Development of the large area silicon PIN diode with 2 mm-thick depletion layer for hard X-ray detector (HXD) on-board ASTRO-E. in RB Hoover & FP Doty (eds), Proceedings of SPIE - The International Society for Optical Engineering. vol. 3115, pp. 244-253, Hard X-Ray and Gamma-Ray Detector Physics, Optics, and Applications, San Diego, CA, United States, 97/7/31. https://doi.org/10.1117/12.277691
Sugizaki M, Kubo S, Murakami T, Ota N, Ozawa H, Takahashi T et al. Development of the large area silicon PIN diode with 2 mm-thick depletion layer for hard X-ray detector (HXD) on-board ASTRO-E. In Hoover RB, Doty FP, editors, Proceedings of SPIE - The International Society for Optical Engineering. Vol. 3115. 1997. p. 244-253 https://doi.org/10.1117/12.277691
Sugizaki, M. ; Kubo, S. ; Murakami, T. ; Ota, N. ; Ozawa, H. ; Takahashi, T. ; Kaneda, H. ; Iyomoto, N. ; Kamae, T. ; Kokubun, M. ; Kubota, Aya ; Makishima, K. ; Tamura, T. ; Tashiro, M. ; Koyama, K. ; Tsunemi, H. / Development of the large area silicon PIN diode with 2 mm-thick depletion layer for hard X-ray detector (HXD) on-board ASTRO-E. Proceedings of SPIE - The International Society for Optical Engineering. editor / R.B. Hoover ; F.P. Doty. Vol. 3115 1997. pp. 244-253
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AU - Takahashi, T.

AU - Kaneda, H.

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