Development of the large area silicon PIN diode with 2mm-thick depletion layer for Hard X-ray Detector (HXD) on-board Astro-E

Mutsumi Sugisaki, Shin Kubo, Toshio Murakami, Naomi Ohta, H. Ozawa, Tadayuki Takahashi, H. KanedaNaoko Iyomoto, ?6? ?24??11?? ?6? ?24??11??, Shuji Kubota

Research output: Contribution to journalArticle

Original languageEnglish
Pages (from-to)244-253
JournalSPIE
Volume3115
Publication statusPublished - 1997 Jul 1

Cite this

Sugisaki, M., Kubo, S., Murakami, T., Ohta, N., Ozawa, H., Takahashi, T., ... Kubota, S. (1997). Development of the large area silicon PIN diode with 2mm-thick depletion layer for Hard X-ray Detector (HXD) on-board Astro-E. SPIE, 3115, 244-253.

Development of the large area silicon PIN diode with 2mm-thick depletion layer for Hard X-ray Detector (HXD) on-board Astro-E. / Sugisaki, Mutsumi; Kubo, Shin; Murakami, Toshio; Ohta, Naomi; Ozawa, H.; Takahashi, Tadayuki; Iyomoto, H. KanedaNaoko; ?6? ?24??11??, ?6? ?24??11??; Kubota, Shuji.

In: SPIE, Vol. 3115, 01.07.1997, p. 244-253.

Research output: Contribution to journalArticle

Sugisaki, M, Kubo, S, Murakami, T, Ohta, N, Ozawa, H, Takahashi, T, Iyomoto, HK, ?6? ?24??11??, & Kubota, S 1997, 'Development of the large area silicon PIN diode with 2mm-thick depletion layer for Hard X-ray Detector (HXD) on-board Astro-E', SPIE, vol. 3115, pp. 244-253.
Sugisaki M, Kubo S, Murakami T, Ohta N, Ozawa H, Takahashi T et al. Development of the large area silicon PIN diode with 2mm-thick depletion layer for Hard X-ray Detector (HXD) on-board Astro-E. SPIE. 1997 Jul 1;3115:244-253.
Sugisaki, Mutsumi ; Kubo, Shin ; Murakami, Toshio ; Ohta, Naomi ; Ozawa, H. ; Takahashi, Tadayuki ; Iyomoto, H. KanedaNaoko ; ?6? ?24??11??, ?6? ?24??11?? ; Kubota, Shuji. / Development of the large area silicon PIN diode with 2mm-thick depletion layer for Hard X-ray Detector (HXD) on-board Astro-E. In: SPIE. 1997 ; Vol. 3115. pp. 244-253.
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