Development of the large area silicon PIN diode with 2mm-thick depletion layer for Hard X-ray Detector (HXD) on-board Astro-E

Mutsumi Sugisaki; Shin Kubo; Toshio Murakami; Naomi Ohta; H. Ozawa; Tadayuki Takahashi; H. KanedaNaoko Iyomoto; ?6? ?24??11?? ?6? ?24??11??; Shuji Kubota

Development of the large area silicon PIN diode with 2mm-thick depletion layer for Hard X-ray Detector (HXD) on-board Astro-E

Mutsumi Sugisaki, Shin Kubo, Toshio Murakami, Naomi Ohta, H. Ozawa, Tadayuki Takahashi, H. KanedaNaoko Iyomoto, ?6? ?24??11?? ?6? ?24??11??, Shuji Kubota

Functional Control Systems

Research output: Contribution to journal › Article › peer-review

Original language	English
Pages (from-to)	244-253
Journal	SPIE
Volume	3115
Publication status	Published - 1997 Jul 1

Cite this

@article{a211679f46634da09fbf488ff5f5926b,

title = "Development of the large area silicon PIN diode with 2mm-thick depletion layer for Hard X-ray Detector (HXD) on-board Astro-E",

author = "Mutsumi Sugisaki and Shin Kubo and Toshio Murakami and Naomi Ohta and H. Ozawa and Tadayuki Takahashi and Iyomoto, {H. KanedaNaoko} and {?6? ?24??11??}, {?6? ?24??11??} and Shuji Kubota",

year = "1997",

month = jul,

day = "1",

language = "English",

volume = "3115",

pages = "244--253",

journal = "SPIE",

}

TY - JOUR

T1 - Development of the large area silicon PIN diode with 2mm-thick depletion layer for Hard X-ray Detector (HXD) on-board Astro-E

AU - Sugisaki, Mutsumi

AU - Kubo, Shin

AU - Murakami, Toshio

AU - Ohta, Naomi

AU - Ozawa, H.

AU - Takahashi, Tadayuki

AU - Iyomoto, H. KanedaNaoko

AU - ?6? ?24??11??, ?6? ?24??11??

AU - Kubota, Shuji

PY - 1997/7/1

Y1 - 1997/7/1

M3 - Article

VL - 3115

SP - 244

EP - 253

JO - SPIE

JF - SPIE

ER -