Development of the large area silicon PIN diode with 2mm-thick depletion layer for Hard X-ray Detector (HXD) on-board Astro-E

Mutsumi Sugisaki; Shin Kubo; Toshio Murakami; Naomi Ohta; H. Ozawa; Tadayuki Takahashi; H. KanedaNaoko Iyomoto; ?6? ?24??11?? ?6? ?24??11??; Shuji Kubota

Development of the large area silicon PIN diode with 2mm-thick depletion layer for Hard X-ray Detector (HXD) on-board Astro-E

Mutsumi Sugisaki, Shin Kubo, Toshio Murakami, Naomi Ohta, H. Ozawa, Tadayuki Takahashi, H. KanedaNaoko Iyomoto, ?6? ?24??11?? ?6? ?24??11??, Shuji Kubota

Functional Control Systems

Research output: Contribution to journal › Article

Original language	English
Pages (from-to)	244-253
Journal	SPIE
Volume	3115
Publication status	Published - 1997 Jul 1

Cite this

Sugisaki, M., Kubo, S., Murakami, T., Ohta, N., Ozawa, H., Takahashi, T., Iyomoto, H. K., ?6? ?24??11??, . ., & Kubota, S. (1997). Development of the large area silicon PIN diode with 2mm-thick depletion layer for Hard X-ray Detector (HXD) on-board Astro-E. SPIE, 3115, 244-253.

Development of the large area silicon PIN diode with 2mm-thick depletion layer for Hard X-ray Detector (HXD) on-board Astro-E. / Sugisaki, Mutsumi; Kubo, Shin; Murakami, Toshio; Ohta, Naomi; Ozawa, H.; Takahashi, Tadayuki; Iyomoto, H. KanedaNaoko; ?6? ?24??11??, ?6? ?24??11??; Kubota, Shuji.

In: SPIE, Vol. 3115, 01.07.1997, p. 244-253.

Research output: Contribution to journal › Article

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author = "Mutsumi Sugisaki and Shin Kubo and Toshio Murakami and Naomi Ohta and H. Ozawa and Tadayuki Takahashi and Iyomoto, {H. KanedaNaoko} and {?6? ?24??11??}, {?6? ?24??11??} and Shuji Kubota",

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