p-channel AlGaAs/GaAs MIS-like heterostructure FETs (p-MIS HFETs) are characterized concerning their gate-source leakage current. Device performance is confirmed to improve approximately inversely to layer thickness d//t between the channel and metal gate, at low gate voltages. A high transconductance g//m of 110 ms-mm** minus **1 is obtained at 77 K by reducing d//t to 20 nm. More results are presented on the effect of the gate-source leakage current on device performance.
|Journal||IEEE Transactions on Electron Devices|
|Publication status||Published - 1987 Dec 1|
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Electrical and Electronic Engineering