Abstract
p-channel AlGaAs/GaAs MIS-like heterostructure FETs (p-MIS HFETs) are characterized concerning their gate-source leakage current. Device performance is confirmed to improve approximately inversely to layer thickness d//t between the channel and metal gate, at low gate voltages. A high transconductance g//m of 110 ms-mm** minus **1 is obtained at 77 K by reducing d//t to 20 nm. More results are presented on the effect of the gate-source leakage current on device performance.
| Original language | English |
|---|---|
| Journal | IEEE Transactions on Electron Devices |
| Volume | ED-34 |
| Issue number | 12 |
| Publication status | Published - 1987 Dec |
| Externally published | Yes |
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ASJC Scopus subject areas
- Electrical and Electronic Engineering
- Physics and Astronomy (miscellaneous)
Cite this
DEVICE CHARACTERIZATION OF P-CHANNEL ALGAAS/GAAS MIS-LIKE HETEROSTRUCTURE FET'S. / Hirano, Makoto; Oe, Kunishige; Yanagawa, Fumihiko; Tsubaki, Kotaro.
In: IEEE Transactions on Electron Devices, Vol. ED-34, No. 12, 12.1987.Research output: Contribution to journal › Article
}
TY - JOUR
T1 - DEVICE CHARACTERIZATION OF P-CHANNEL ALGAAS/GAAS MIS-LIKE HETEROSTRUCTURE FET'S.
AU - Hirano, Makoto
AU - Oe, Kunishige
AU - Yanagawa, Fumihiko
AU - Tsubaki, Kotaro
PY - 1987/12
Y1 - 1987/12
N2 - p-channel AlGaAs/GaAs MIS-like heterostructure FETs (p-MIS HFETs) are characterized concerning their gate-source leakage current. Device performance is confirmed to improve approximately inversely to layer thickness d//t between the channel and metal gate, at low gate voltages. A high transconductance g//m of 110 ms-mm** minus **1 is obtained at 77 K by reducing d//t to 20 nm. More results are presented on the effect of the gate-source leakage current on device performance.
AB - p-channel AlGaAs/GaAs MIS-like heterostructure FETs (p-MIS HFETs) are characterized concerning their gate-source leakage current. Device performance is confirmed to improve approximately inversely to layer thickness d//t between the channel and metal gate, at low gate voltages. A high transconductance g//m of 110 ms-mm** minus **1 is obtained at 77 K by reducing d//t to 20 nm. More results are presented on the effect of the gate-source leakage current on device performance.
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UR - http://www.scopus.com/inward/citedby.url?scp=0023564217&partnerID=8YFLogxK
M3 - Article
AN - SCOPUS:0023564217
VL - ED-34
JO - IEEE Transactions on Electron Devices
JF - IEEE Transactions on Electron Devices
SN - 0018-9383
IS - 12
ER -