DEVICE CHARACTERIZATION OF P-CHANNEL ALGAAS/GAAS MIS-LIKE HETEROSTRUCTURE FET'S.

Makoto Hirano, Kunishige Oe, Fumihiko Yanagawa, Kotaro Tsubaki

Research output: Contribution to journalArticle

8 Citations (Scopus)

Abstract

p-channel AlGaAs/GaAs MIS-like heterostructure FETs (p-MIS HFETs) are characterized concerning their gate-source leakage current. Device performance is confirmed to improve approximately inversely to layer thickness d//t between the channel and metal gate, at low gate voltages. A high transconductance g//m of 110 ms-mm** minus **1 is obtained at 77 K by reducing d//t to 20 nm. More results are presented on the effect of the gate-source leakage current on device performance.

Original languageEnglish
JournalIEEE Transactions on Electron Devices
VolumeED-34
Issue number12
Publication statusPublished - 1987 Dec
Externally publishedYes

Fingerprint

Management information systems
MIS (semiconductors)
Field effect transistors
Leakage currents
aluminum gallium arsenides
Heterojunctions
field effect transistors
Transconductance
leakage
Metals
Electric potential
transconductance
gallium arsenide
electric potential
metals

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Physics and Astronomy (miscellaneous)

Cite this

DEVICE CHARACTERIZATION OF P-CHANNEL ALGAAS/GAAS MIS-LIKE HETEROSTRUCTURE FET'S. / Hirano, Makoto; Oe, Kunishige; Yanagawa, Fumihiko; Tsubaki, Kotaro.

In: IEEE Transactions on Electron Devices, Vol. ED-34, No. 12, 12.1987.

Research output: Contribution to journalArticle

Hirano, Makoto ; Oe, Kunishige ; Yanagawa, Fumihiko ; Tsubaki, Kotaro. / DEVICE CHARACTERIZATION OF P-CHANNEL ALGAAS/GAAS MIS-LIKE HETEROSTRUCTURE FET'S. In: IEEE Transactions on Electron Devices. 1987 ; Vol. ED-34, No. 12.
@article{59d1ab5132964c5697948051f663eab1,
title = "DEVICE CHARACTERIZATION OF P-CHANNEL ALGAAS/GAAS MIS-LIKE HETEROSTRUCTURE FET'S.",
abstract = "p-channel AlGaAs/GaAs MIS-like heterostructure FETs (p-MIS HFETs) are characterized concerning their gate-source leakage current. Device performance is confirmed to improve approximately inversely to layer thickness d//t between the channel and metal gate, at low gate voltages. A high transconductance g//m of 110 ms-mm** minus **1 is obtained at 77 K by reducing d//t to 20 nm. More results are presented on the effect of the gate-source leakage current on device performance.",
author = "Makoto Hirano and Kunishige Oe and Fumihiko Yanagawa and Kotaro Tsubaki",
year = "1987",
month = "12",
language = "English",
volume = "ED-34",
journal = "IEEE Transactions on Electron Devices",
issn = "0018-9383",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
number = "12",

}

TY - JOUR

T1 - DEVICE CHARACTERIZATION OF P-CHANNEL ALGAAS/GAAS MIS-LIKE HETEROSTRUCTURE FET'S.

AU - Hirano, Makoto

AU - Oe, Kunishige

AU - Yanagawa, Fumihiko

AU - Tsubaki, Kotaro

PY - 1987/12

Y1 - 1987/12

N2 - p-channel AlGaAs/GaAs MIS-like heterostructure FETs (p-MIS HFETs) are characterized concerning their gate-source leakage current. Device performance is confirmed to improve approximately inversely to layer thickness d//t between the channel and metal gate, at low gate voltages. A high transconductance g//m of 110 ms-mm** minus **1 is obtained at 77 K by reducing d//t to 20 nm. More results are presented on the effect of the gate-source leakage current on device performance.

AB - p-channel AlGaAs/GaAs MIS-like heterostructure FETs (p-MIS HFETs) are characterized concerning their gate-source leakage current. Device performance is confirmed to improve approximately inversely to layer thickness d//t between the channel and metal gate, at low gate voltages. A high transconductance g//m of 110 ms-mm** minus **1 is obtained at 77 K by reducing d//t to 20 nm. More results are presented on the effect of the gate-source leakage current on device performance.

UR - http://www.scopus.com/inward/record.url?scp=0023564217&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0023564217&partnerID=8YFLogxK

M3 - Article

VL - ED-34

JO - IEEE Transactions on Electron Devices

JF - IEEE Transactions on Electron Devices

SN - 0018-9383

IS - 12

ER -