DEVICE CHARACTERIZATION OF P-CHANNEL ALGAAS/GAAS MIS-LIKE HETEROSTRUCTURE FET'S.

Makoto Hirano; Kunishige Oe; Fumihiko Yanagawa; Kotaro Tsubaki

DEVICE CHARACTERIZATION OF P-CHANNEL ALGAAS/GAAS MIS-LIKE HETEROSTRUCTURE FET'S.

Makoto Hirano, Kunishige Oe, Fumihiko Yanagawa, Kotaro Tsubaki

Research output: Contribution to journal › Article

Abstract

p-channel AlGaAs/GaAs MIS-like heterostructure FETs (p-MIS HFETs) are characterized concerning their gate-source leakage current. Device performance is confirmed to improve approximately inversely to layer thickness d//t between the channel and metal gate, at low gate voltages. A high transconductance g//m of 110 ms-mm** minus **1 is obtained at 77 K by reducing d//t to 20 nm. More results are presented on the effect of the gate-source leakage current on device performance.

Original language	English
Journal	IEEE Transactions on Electron Devices
Volume	ED-34
Issue number	12
Publication status	Published - 1987 Dec 1

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Electronic, Optical and Magnetic Materials
Electrical and Electronic Engineering

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Hirano, M., Oe, K., Yanagawa, F., & Tsubaki, K. (1987). DEVICE CHARACTERIZATION OF P-CHANNEL ALGAAS/GAAS MIS-LIKE HETEROSTRUCTURE FET'S. IEEE Transactions on Electron Devices, ED-34(12).

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abstract = "p-channel AlGaAs/GaAs MIS-like heterostructure FETs (p-MIS HFETs) are characterized concerning their gate-source leakage current. Device performance is confirmed to improve approximately inversely to layer thickness d//t between the channel and metal gate, at low gate voltages. A high transconductance g//m of 110 ms-mm** minus **1 is obtained at 77 K by reducing d//t to 20 nm. More results are presented on the effect of the gate-source leakage current on device performance.",

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year = "1987",

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T1 - DEVICE CHARACTERIZATION OF P-CHANNEL ALGAAS/GAAS MIS-LIKE HETEROSTRUCTURE FET'S.

AU - Hirano, Makoto

AU - Oe, Kunishige

AU - Yanagawa, Fumihiko

AU - Tsubaki, Kotaro

PY - 1987/12/1

Y1 - 1987/12/1

N2 - p-channel AlGaAs/GaAs MIS-like heterostructure FETs (p-MIS HFETs) are characterized concerning their gate-source leakage current. Device performance is confirmed to improve approximately inversely to layer thickness d//t between the channel and metal gate, at low gate voltages. A high transconductance g//m of 110 ms-mm** minus **1 is obtained at 77 K by reducing d//t to 20 nm. More results are presented on the effect of the gate-source leakage current on device performance.

AB - p-channel AlGaAs/GaAs MIS-like heterostructure FETs (p-MIS HFETs) are characterized concerning their gate-source leakage current. Device performance is confirmed to improve approximately inversely to layer thickness d//t between the channel and metal gate, at low gate voltages. A high transconductance g//m of 110 ms-mm** minus **1 is obtained at 77 K by reducing d//t to 20 nm. More results are presented on the effect of the gate-source leakage current on device performance.

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ER -

DEVICE CHARACTERIZATION OF P-CHANNEL ALGAAS/GAAS MIS-LIKE HETEROSTRUCTURE FET'S.

Abstract

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