DEVICE CHARACTERIZATION OF P-CHANNEL ALGAAS/GAAS MIS-LIKE HETEROSTRUCTURE FET'S.

Makoto Hirano, Kunishige Oe, Fumihiko Yanagawa, Kotaro Tsubaki

    Research output: Contribution to journalArticle

    8 Citations (Scopus)

    Abstract

    p-channel AlGaAs/GaAs MIS-like heterostructure FETs (p-MIS HFETs) are characterized concerning their gate-source leakage current. Device performance is confirmed to improve approximately inversely to layer thickness d//t between the channel and metal gate, at low gate voltages. A high transconductance g//m of 110 ms-mm** minus **1 is obtained at 77 K by reducing d//t to 20 nm. More results are presented on the effect of the gate-source leakage current on device performance.

    Original languageEnglish
    JournalIEEE Transactions on Electron Devices
    VolumeED-34
    Issue number12
    Publication statusPublished - 1987 Dec 1

    ASJC Scopus subject areas

    • Electronic, Optical and Magnetic Materials
    • Electrical and Electronic Engineering

    Fingerprint Dive into the research topics of 'DEVICE CHARACTERIZATION OF P-CHANNEL ALGAAS/GAAS MIS-LIKE HETEROSTRUCTURE FET'S.'. Together they form a unique fingerprint.

  • Cite this