Device Characterization of p-Channel AlGaAs/GaAs MIS-Like Heterostructure FET's

Makoto Hirano, Kunishige Oe, Fumihiko Yanagawa, Kotaro Tsubaki

Research output: Contribution to journalArticle

4 Citations (Scopus)

Abstract

p-chanhel AlGaAs/GaAs MIS-like heterostructure FET's (p-MIS HFET's) are characterized concerning their gate-source leakage current. Device performance is confirmed to improve approximately inversely to layer thickness dt, between the channel and metal gate, at low gate voltages. A high transconductance gm of 110 ms. mm-1 is obtained at 77 K by reducing dt to 20 nm. Maximum transconductance is limited by gate-source leakage current Igs. lgs is governed mainly by the leakage current through the ion-implanted gate edge and is reduced by decreasing the dose level of ion implantation at the gate edge to 2 x 1013 cm-2. The contact resistance is reduced to about 0.Ω1 mm by ion implantation into the ohmic contact region to a dose of 2 x 1014 cm-2. Calculations indicate that, by reducing fgs and the gate-source resistance to 1Ωmm with the lightly doped drain (LDD) structure, gm around 200 mS- mm-1 at 300 K and 300 mS - mm-1 at 77 k are achievable with a[fprmula ommitet] gate structure.

Original languageEnglish
Pages (from-to)2399-2404
Number of pages6
JournalIEEE Transactions on Electron Devices
Volume34
Issue number12
DOIs
Publication statusPublished - 1987
Externally publishedYes

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Management information systems
Field effect transistors
Leakage currents
Heterojunctions
Transconductance
Ion implantation
Ohmic contacts
Contact resistance
Metals
Ions
Electric potential
gallium arsenide

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials

Cite this

Device Characterization of p-Channel AlGaAs/GaAs MIS-Like Heterostructure FET's. / Hirano, Makoto; Oe, Kunishige; Yanagawa, Fumihiko; Tsubaki, Kotaro.

In: IEEE Transactions on Electron Devices, Vol. 34, No. 12, 1987, p. 2399-2404.

Research output: Contribution to journalArticle

Hirano, Makoto ; Oe, Kunishige ; Yanagawa, Fumihiko ; Tsubaki, Kotaro. / Device Characterization of p-Channel AlGaAs/GaAs MIS-Like Heterostructure FET's. In: IEEE Transactions on Electron Devices. 1987 ; Vol. 34, No. 12. pp. 2399-2404.
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