Device Characterization of p-Channel AlGaAs/GaAs MIS-Like Heterostructure FETs

Makoto Hirano

    Research output: Contribution to journalArticle

    Original languageEnglish
    Pages (from-to)2399-2404
    JournalIEEE Trans. on Electron Devices
    VolumeED-34
    Publication statusPublished - 1987 Dec 1

    Cite this

    Device Characterization of p-Channel AlGaAs/GaAs MIS-Like Heterostructure FETs. / Hirano, Makoto.

    In: IEEE Trans. on Electron Devices, Vol. ED-34, 01.12.1987, p. 2399-2404.

    Research output: Contribution to journalArticle

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    title = "Device Characterization of p-Channel AlGaAs/GaAs MIS-Like Heterostructure FETs",
    author = "Makoto Hirano",
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    journal = "IEEE Trans. on Electron Devices",

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    AU - Hirano, Makoto

    PY - 1987/12/1

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    JO - IEEE Trans. on Electron Devices

    JF - IEEE Trans. on Electron Devices

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