Device structure- and trap parameter-dependence of current collapse and lag phenomena in AlGaN/GaN HEMTs

A. Nakajima, K. Itagaki, H. Nara, K. Horio

Research output: Contribution to journalArticle

Original languageEnglish
Pages (from-to)518-519
JournalExtended abstracts of 2008 International Conference on Solid State Devices and Materials (SSDM 2008), Tsukuba, Japan
Publication statusPublished - 2008 Sep 25

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