Device structure- and trap parameter-dependence of current collapse and lag phenomena in AlGaN/GaN HEMTs

A. Nakajima, K. Itagaki, H. Nara, K. Horio

Research output: Contribution to journalArticle

Original languageEnglish
Pages (from-to)518-519
JournalExtended abstracts of 2008 International Conference on Solid State Devices and Materials (SSDM 2008), Tsukuba, Japan
Publication statusPublished - 2008 Sep 25

Cite this

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title = "Device structure- and trap parameter-dependence of current collapse and lag phenomena in AlGaN/GaN HEMTs",
author = "A. Nakajima and K. Itagaki and H. Nara and K. Horio",
year = "2008",
month = "9",
day = "25",
language = "English",
pages = "518--519",
journal = "Extended abstracts of 2008 International Conference on Solid State Devices and Materials (SSDM 2008), Tsukuba, Japan",

}

TY - JOUR

T1 - Device structure- and trap parameter-dependence of current collapse and lag phenomena in AlGaN/GaN HEMTs

AU - Nakajima, A.

AU - Itagaki, K.

AU - Nara, H.

AU - Horio, K.

PY - 2008/9/25

Y1 - 2008/9/25

M3 - Article

SP - 518

EP - 519

JO - Extended abstracts of 2008 International Conference on Solid State Devices and Materials (SSDM 2008), Tsukuba, Japan

JF - Extended abstracts of 2008 International Conference on Solid State Devices and Materials (SSDM 2008), Tsukuba, Japan

ER -