Dielectric and electrical properties of amorphous La1-xTa xOy films as higher- k gate insulators

Yi Zhao, Koji Kita, Kentaro Kyuno, Akira Toriumi

Research output: Contribution to journalArticlepeer-review

19 Citations (Scopus)


In this study, we investigated the applicability of an amorphous, high-permittivity (k) dielectric film La1-xTaxO y as an alternative gate insulator in next-generation complementary metal-oxide-semiconductor devices and metal-insulator-metal capacitors. La 1-xTaxOy films not only show a crystallization temperature higher than 1000 °C, but also a permittivity as high as 30. La1-xTaxOy films also have a much larger band gap than Ta2O5 films because of the coupling effect between the 5d orbitals of La and Ta atoms bonding to a common oxygen atom. Therefore, La1-xTaxOy films with appropriate Ta concentration are promising amorphous high- k gate insulators.

Original languageEnglish
Article number034103
JournalJournal of Applied Physics
Issue number3
Publication statusPublished - 2009

ASJC Scopus subject areas

  • Physics and Astronomy(all)


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