Dielectric and electrical properties of amorphous La1-xTa xOy films as higher- k gate insulators

Yi Zhao, Koji Kita, Kentaro Kyuno, Akira Toriumi

Research output: Contribution to journalArticle

19 Citations (Scopus)

Abstract

In this study, we investigated the applicability of an amorphous, high-permittivity (k) dielectric film La1-xTaxO y as an alternative gate insulator in next-generation complementary metal-oxide-semiconductor devices and metal-insulator-metal capacitors. La 1-xTaxOy films not only show a crystallization temperature higher than 1000 °C, but also a permittivity as high as 30. La1-xTaxOy films also have a much larger band gap than Ta2O5 films because of the coupling effect between the 5d orbitals of La and Ta atoms bonding to a common oxygen atom. Therefore, La1-xTaxOy films with appropriate Ta concentration are promising amorphous high- k gate insulators.

Original languageEnglish
Article number034103
JournalJournal of Applied Physics
Volume105
Issue number3
DOIs
Publication statusPublished - 2009

Fingerprint

dielectric properties
electrical properties
insulators
permittivity
semiconductor devices
metals
oxygen atoms
CMOS
capacitors
crystallization
orbitals
atoms

ASJC Scopus subject areas

  • Physics and Astronomy(all)

Cite this

Dielectric and electrical properties of amorphous La1-xTa xOy films as higher- k gate insulators. / Zhao, Yi; Kita, Koji; Kyuno, Kentaro; Toriumi, Akira.

In: Journal of Applied Physics, Vol. 105, No. 3, 034103, 2009.

Research output: Contribution to journalArticle

@article{16ff9b48e98046e8a81a1f3cafc5b640,
title = "Dielectric and electrical properties of amorphous La1-xTa xOy films as higher- k gate insulators",
abstract = "In this study, we investigated the applicability of an amorphous, high-permittivity (k) dielectric film La1-xTaxO y as an alternative gate insulator in next-generation complementary metal-oxide-semiconductor devices and metal-insulator-metal capacitors. La 1-xTaxOy films not only show a crystallization temperature higher than 1000 °C, but also a permittivity as high as 30. La1-xTaxOy films also have a much larger band gap than Ta2O5 films because of the coupling effect between the 5d orbitals of La and Ta atoms bonding to a common oxygen atom. Therefore, La1-xTaxOy films with appropriate Ta concentration are promising amorphous high- k gate insulators.",
author = "Yi Zhao and Koji Kita and Kentaro Kyuno and Akira Toriumi",
year = "2009",
doi = "10.1063/1.3073946",
language = "English",
volume = "105",
journal = "Journal of Applied Physics",
issn = "0021-8979",
publisher = "American Institute of Physics Publising LLC",
number = "3",

}

TY - JOUR

T1 - Dielectric and electrical properties of amorphous La1-xTa xOy films as higher- k gate insulators

AU - Zhao, Yi

AU - Kita, Koji

AU - Kyuno, Kentaro

AU - Toriumi, Akira

PY - 2009

Y1 - 2009

N2 - In this study, we investigated the applicability of an amorphous, high-permittivity (k) dielectric film La1-xTaxO y as an alternative gate insulator in next-generation complementary metal-oxide-semiconductor devices and metal-insulator-metal capacitors. La 1-xTaxOy films not only show a crystallization temperature higher than 1000 °C, but also a permittivity as high as 30. La1-xTaxOy films also have a much larger band gap than Ta2O5 films because of the coupling effect between the 5d orbitals of La and Ta atoms bonding to a common oxygen atom. Therefore, La1-xTaxOy films with appropriate Ta concentration are promising amorphous high- k gate insulators.

AB - In this study, we investigated the applicability of an amorphous, high-permittivity (k) dielectric film La1-xTaxO y as an alternative gate insulator in next-generation complementary metal-oxide-semiconductor devices and metal-insulator-metal capacitors. La 1-xTaxOy films not only show a crystallization temperature higher than 1000 °C, but also a permittivity as high as 30. La1-xTaxOy films also have a much larger band gap than Ta2O5 films because of the coupling effect between the 5d orbitals of La and Ta atoms bonding to a common oxygen atom. Therefore, La1-xTaxOy films with appropriate Ta concentration are promising amorphous high- k gate insulators.

UR - http://www.scopus.com/inward/record.url?scp=60449093604&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=60449093604&partnerID=8YFLogxK

U2 - 10.1063/1.3073946

DO - 10.1063/1.3073946

M3 - Article

VL - 105

JO - Journal of Applied Physics

JF - Journal of Applied Physics

SN - 0021-8979

IS - 3

M1 - 034103

ER -