Dielectric Constant Increase of Yttrium-Doped HfO2 by Structural Phase Modification

K Kita, K Kyuno, A toriumi

Research output: Contribution to journalArticle

Original languageEnglish
Pages (from-to)794-795
JournalExtended Abstracts of 2004 International Conference on Solid State Devices and Materials (SSDM)
Publication statusPublished - 2004 Sep 1

Cite this

@article{ce2c10c4bf52417e90306b0d1203460b,
title = "Dielectric Constant Increase of Yttrium-Doped HfO2 by Structural Phase Modification",
author = "K Kita and K Kyuno and A toriumi",
year = "2004",
month = "9",
day = "1",
language = "English",
pages = "794--795",
journal = "Extended Abstracts of 2004 International Conference on Solid State Devices and Materials (SSDM)",

}

TY - JOUR

T1 - Dielectric Constant Increase of Yttrium-Doped HfO2 by Structural Phase Modification

AU - Kita, K

AU - Kyuno, K

AU - toriumi, A

PY - 2004/9/1

Y1 - 2004/9/1

M3 - Article

SP - 794

EP - 795

JO - Extended Abstracts of 2004 International Conference on Solid State Devices and Materials (SSDM)

JF - Extended Abstracts of 2004 International Conference on Solid State Devices and Materials (SSDM)

ER -