| Original language | English |
|---|---|
| Pages (from-to) | 794-795 |
| Journal | Extended Abstracts of 2004 International Conference on Solid State Devices and Materials (SSDM) |
| Publication status | Published - 2004 Sep 1 |
Cite this
Dielectric Constant Increase of Yttrium-Doped HfO2 by Structural Phase Modification. / Kita, K; Kyuno, K; toriumi, A.
In: Extended Abstracts of 2004 International Conference on Solid State Devices and Materials (SSDM), 01.09.2004, p. 794-795.Research output: Contribution to journal › Article
@article{ce2c10c4bf52417e90306b0d1203460b,
title = "Dielectric Constant Increase of Yttrium-Doped HfO2 by Structural Phase Modification",
author = "K Kita and K Kyuno and A toriumi",
year = "2004",
month = "9",
day = "1",
language = "English",
pages = "794--795",
journal = "Extended Abstracts of 2004 International Conference on Solid State Devices and Materials (SSDM)",
}
TY - JOUR
T1 - Dielectric Constant Increase of Yttrium-Doped HfO2 by Structural Phase Modification
AU - Kita, K
AU - Kyuno, K
AU - toriumi, A
PY - 2004/9/1
Y1 - 2004/9/1
M3 - Article
SP - 794
EP - 795
JO - Extended Abstracts of 2004 International Conference on Solid State Devices and Materials (SSDM)
JF - Extended Abstracts of 2004 International Conference on Solid State Devices and Materials (SSDM)
ER -