Difference between O2 and N2 Annealing Effects on CVD-SiO2 Film Quality Studied by Open-Circuit Measurement

K. Kita, K. Kyuno, A. Toriumi

Research output: Contribution to journal › Article › peer-review

Original language	English
Pages (from-to)	786-787
Journal	Extended Abstracts of 2004 International Conference on Solid State Devices and Materials (SSDM)
Publication status	Published - 2004 Sept 1

Cite this

@article{a5cde2ced7f44c6f93f415bbc6f4490d,

title = "Difference between O2 and N2 Annealing Effects on CVD-SiO2 Film Quality Studied by Open-Circuit Measurement",

author = "K. Kita and K. Kyuno and A. Toriumi",

year = "2004",

month = sep,

day = "1",

language = "English",

pages = "786--787",

journal = "Extended Abstracts of 2004 International Conference on Solid State Devices and Materials (SSDM)",

}

TY - JOUR

T1 - Difference between O2 and N2 Annealing Effects on CVD-SiO2 Film Quality Studied by Open-Circuit Measurement

AU - Kita, K.

AU - Kyuno, K.

AU - Toriumi, A.

PY - 2004/9/1

Y1 - 2004/9/1

M3 - Article

SP - 786

EP - 787

JO - Extended Abstracts of 2004 International Conference on Solid State Devices and Materials (SSDM)

JF - Extended Abstracts of 2004 International Conference on Solid State Devices and Materials (SSDM)

ER -