Difference between O2 and N2 Annealing Effects on CVD-SiO2 Film Quality Studied by Open-Circuit Measurement

K. Kita, K. Kyuno, A. Toriumi

Research output: Contribution to journalArticle

Original languageEnglish
Pages (from-to)786-787
JournalExtended Abstracts of 2004 International Conference on Solid State Devices and Materials (SSDM)
Publication statusPublished - 2004 Sep 1

Cite this

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title = "Difference between O2 and N2 Annealing Effects on CVD-SiO2 Film Quality Studied by Open-Circuit Measurement",
author = "K. Kita and K. Kyuno and A. Toriumi",
year = "2004",
month = "9",
day = "1",
language = "English",
pages = "786--787",
journal = "Extended Abstracts of 2004 International Conference on Solid State Devices and Materials (SSDM)",

}

TY - JOUR

T1 - Difference between O2 and N2 Annealing Effects on CVD-SiO2 Film Quality Studied by Open-Circuit Measurement

AU - Kita, K.

AU - Kyuno, K.

AU - Toriumi, A.

PY - 2004/9/1

Y1 - 2004/9/1

M3 - Article

SP - 786

EP - 787

JO - Extended Abstracts of 2004 International Conference on Solid State Devices and Materials (SSDM)

JF - Extended Abstracts of 2004 International Conference on Solid State Devices and Materials (SSDM)

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