The electrical resistivity, the Hall effect and the oxygen content have been measured for YBa2(Cu1−xMx)3Oy(M=Co and Zn). The electrical resistivity increases with concentration x in both systems. The carrier concentration decreases with x for M=Co, while it remains almost constant for M=Zn. The suppression of Tc in the Co-doped system is explained by the reduction in carrier. In the Zn-doped system, on the other hand, the suppression seems to be caused by the electron localization in Cu-O planes.
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics
- Electrical and Electronic Engineering