Different origins of Tc-suppression in YBa2(Cu1−xMx)3Oy(M=Co and Zn)

Shoji Terada, Norio Kobayashi, Hideo Iwasaki, Ayako Tokiwa, Masae Kikuchi, Yasuhiko Syono, Yoshio Muto

Research output: Contribution to journalArticle

5 Citations (Scopus)

Abstract

The electrical resistivity, the Hall effect and the oxygen content have been measured for YBa2(Cu1−xMx)3Oy(M=Co and Zn). The electrical resistivity increases with concentration x in both systems. The carrier concentration decreases with x for M=Co, while it remains almost constant for M=Zn. The suppression of Tc in the Co-doped system is explained by the reduction in carrier. In the Zn-doped system, on the other hand, the suppression seems to be caused by the electron localization in Cu-O planes.

Original languageEnglish
Pages (from-to)1545-1546
Number of pages2
JournalPhysica B: Condensed Matter
Volume165-166
DOIs
Publication statusPublished - 1990 Jan 1

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering

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    Terada, S., Kobayashi, N., Iwasaki, H., Tokiwa, A., Kikuchi, M., Syono, Y., & Muto, Y. (1990). Different origins of Tc-suppression in YBa2(Cu1−xMx)3Oy(M=Co and Zn). Physica B: Condensed Matter, 165-166, 1545-1546. https://doi.org/10.1016/S0921-4526(09)80358-X