Abstract
The electrical resistivity, the Hall effect and the oxygen content have been measured for YBa2(Cu1−xMx)3Oy(M=Co and Zn). The electrical resistivity increases with concentration x in both systems. The carrier concentration decreases with x for M=Co, while it remains almost constant for M=Zn. The suppression of Tc in the Co-doped system is explained by the reduction in carrier. In the Zn-doped system, on the other hand, the suppression seems to be caused by the electron localization in Cu-O planes.
| Original language | English |
|---|---|
| Pages (from-to) | 1545-1546 |
| Number of pages | 2 |
| Journal | Physica B: Condensed Matter |
| Volume | 165-166 |
| DOIs | |
| Publication status | Published - 1990 |
| Externally published | Yes |
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics
- Electrical and Electronic Engineering
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Cite this
Terada, S., Kobayashi, N., Iwasaki, H., Tokiwa, A., Kikuchi, M., Syono, Y., & Muto, Y. (1990). Different origins of Tc-suppression in YBa2(Cu1−xMx)3Oy(M=Co and Zn). Physica B: Condensed Matter, 165-166, 1545-1546. https://doi.org/10.1016/S0921-4526(09)80358-X