Different origins of Tc-suppression in YBa2(Cu1−xMx)3Oy(M=Co and Zn)

Shoji Terada; Norio Kobayashi; Hideo Iwasaki; Ayako Tokiwa; Masae Kikuchi; Yasuhiko Syono; Yoshio Muto

doi:10.1016/S0921-4526(09)80358-X

Different origins of T_c-suppression in YBa₂(Cu_1−xM_x)₃O_y(M=Co and Zn)

Shoji Terada, Norio Kobayashi, Hideo Iwasaki, Ayako Tokiwa, Masae Kikuchi, Yasuhiko Syono, Yoshio Muto

Research output: Contribution to journal › Article › peer-review

5 Citations (Scopus)

Abstract

The electrical resistivity, the Hall effect and the oxygen content have been measured for YBa₂(Cu_1−xM_x)₃O_y(M=Co and Zn). The electrical resistivity increases with concentration x in both systems. The carrier concentration decreases with x for M=Co, while it remains almost constant for M=Zn. The suppression of T_c in the Co-doped system is explained by the reduction in carrier. In the Zn-doped system, on the other hand, the suppression seems to be caused by the electron localization in Cu-O planes.

Original language	English
Pages (from-to)	1545-1546
Number of pages	2
Journal	Physica B: Condensed Matter
Volume	165-166
DOIs	https://doi.org/10.1016/S0921-4526(09)80358-X
Publication status	Published - 1990
Externally published	Yes

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Electrical and Electronic Engineering

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10.1016/S0921-4526(09)80358-X

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title = "Different origins of Tc-suppression in YBa2(Cu1−xMx)3Oy(M=Co and Zn)",

abstract = "The electrical resistivity, the Hall effect and the oxygen content have been measured for YBa2(Cu1−xMx)3Oy(M=Co and Zn). The electrical resistivity increases with concentration x in both systems. The carrier concentration decreases with x for M=Co, while it remains almost constant for M=Zn. The suppression of Tc in the Co-doped system is explained by the reduction in carrier. In the Zn-doped system, on the other hand, the suppression seems to be caused by the electron localization in Cu-O planes.",

author = "Shoji Terada and Norio Kobayashi and Hideo Iwasaki and Ayako Tokiwa and Masae Kikuchi and Yasuhiko Syono and Yoshio Muto",

year = "1990",

doi = "10.1016/S0921-4526(09)80358-X",

language = "English",

volume = "165-166",

pages = "1545--1546",

journal = "Physica B: Condensed Matter",

issn = "0921-4526",

publisher = "Elsevier",

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T1 - Different origins of Tc-suppression in YBa2(Cu1−xMx)3Oy(M=Co and Zn)

AU - Terada, Shoji

AU - Kobayashi, Norio

AU - Iwasaki, Hideo

AU - Tokiwa, Ayako

AU - Kikuchi, Masae

AU - Syono, Yasuhiko

AU - Muto, Yoshio

PY - 1990

Y1 - 1990

N2 - The electrical resistivity, the Hall effect and the oxygen content have been measured for YBa2(Cu1−xMx)3Oy(M=Co and Zn). The electrical resistivity increases with concentration x in both systems. The carrier concentration decreases with x for M=Co, while it remains almost constant for M=Zn. The suppression of Tc in the Co-doped system is explained by the reduction in carrier. In the Zn-doped system, on the other hand, the suppression seems to be caused by the electron localization in Cu-O planes.

AB - The electrical resistivity, the Hall effect and the oxygen content have been measured for YBa2(Cu1−xMx)3Oy(M=Co and Zn). The electrical resistivity increases with concentration x in both systems. The carrier concentration decreases with x for M=Co, while it remains almost constant for M=Zn. The suppression of Tc in the Co-doped system is explained by the reduction in carrier. In the Zn-doped system, on the other hand, the suppression seems to be caused by the electron localization in Cu-O planes.

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U2 - 10.1016/S0921-4526(09)80358-X

DO - 10.1016/S0921-4526(09)80358-X

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VL - 165-166

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EP - 1546

JO - Physica B: Condensed Matter

JF - Physica B: Condensed Matter

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