Direct bonding between InP and rare earth iron garnet grown on Gd3Ga5O12 substrate by liquid phase epitaxy

Hideki Yokoi, T. Mizumoto, K. Maru, Y. Naito

Research output: Contribution to journalArticle

21 Citations (Scopus)

Abstract

The bonding of InP and rare earth iron garnet grown on Gd3Ga5O12 substrate without any additional material is demonstrated. After chemical treatment, heat treatment in H2 ambient results in the bonding of the samples. This process is applicable to the integration of semiconductor and magneto-optic devices.

Original languageEnglish
Pages (from-to)1612-1613
Number of pages2
JournalElectronics Letters
Volume31
Issue number18
DOIs
Publication statusPublished - 1995 Jan 1
Externally publishedYes

Fingerprint

Liquid phase epitaxy
Garnets
Rare earths
Iron
Magnetooptical effects
Substrates
Heat treatment
Semiconductor materials

ASJC Scopus subject areas

  • Electrical and Electronic Engineering

Cite this

Direct bonding between InP and rare earth iron garnet grown on Gd3Ga5O12 substrate by liquid phase epitaxy. / Yokoi, Hideki; Mizumoto, T.; Maru, K.; Naito, Y.

In: Electronics Letters, Vol. 31, No. 18, 01.01.1995, p. 1612-1613.

Research output: Contribution to journalArticle

@article{a0566fc7bf8e4f11ab5acea06d4de882,
title = "Direct bonding between InP and rare earth iron garnet grown on Gd3Ga5O12 substrate by liquid phase epitaxy",
abstract = "The bonding of InP and rare earth iron garnet grown on Gd3Ga5O12 substrate without any additional material is demonstrated. After chemical treatment, heat treatment in H2 ambient results in the bonding of the samples. This process is applicable to the integration of semiconductor and magneto-optic devices.",
author = "Hideki Yokoi and T. Mizumoto and K. Maru and Y. Naito",
year = "1995",
month = "1",
day = "1",
doi = "10.1049/el:19951050",
language = "English",
volume = "31",
pages = "1612--1613",
journal = "Electronics Letters",
issn = "0013-5194",
publisher = "Institution of Engineering and Technology",
number = "18",

}

TY - JOUR

T1 - Direct bonding between InP and rare earth iron garnet grown on Gd3Ga5O12 substrate by liquid phase epitaxy

AU - Yokoi, Hideki

AU - Mizumoto, T.

AU - Maru, K.

AU - Naito, Y.

PY - 1995/1/1

Y1 - 1995/1/1

N2 - The bonding of InP and rare earth iron garnet grown on Gd3Ga5O12 substrate without any additional material is demonstrated. After chemical treatment, heat treatment in H2 ambient results in the bonding of the samples. This process is applicable to the integration of semiconductor and magneto-optic devices.

AB - The bonding of InP and rare earth iron garnet grown on Gd3Ga5O12 substrate without any additional material is demonstrated. After chemical treatment, heat treatment in H2 ambient results in the bonding of the samples. This process is applicable to the integration of semiconductor and magneto-optic devices.

UR - http://www.scopus.com/inward/record.url?scp=0029352973&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0029352973&partnerID=8YFLogxK

U2 - 10.1049/el:19951050

DO - 10.1049/el:19951050

M3 - Article

AN - SCOPUS:0029352973

VL - 31

SP - 1612

EP - 1613

JO - Electronics Letters

JF - Electronics Letters

SN - 0013-5194

IS - 18

ER -