Direct bonding between InP and rare earth iron garnet grown on Gd3Ga5O12 substrate by liquid phase epitaxy

H. Yokoi, T. Mizumoto, K. Maru, Y. Naito

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Abstract

The bonding of InP and rare earth iron garnet grown on Gd3Ga5O12 substrate without any additional material is demonstrated. After chemical treatment, heat treatment in H2 ambient results in the bonding of the samples. This process is applicable to the integration of semiconductor and magneto-optic devices.

Original languageEnglish
Pages (from-to)1612-1613
Number of pages2
JournalElectronics Letters
Volume31
Issue number18
DOIs
Publication statusPublished - 1995 Aug 31

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Keywords

  • Garnets
  • Indium phosphide
  • Wafer bonding

ASJC Scopus subject areas

  • Electrical and Electronic Engineering

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