Direct bonding between InP substrate and magnetooptic waveguides

Hideki Yokoi, Tetsuya Mizumoto, Koichi Maru, Nobutaka Fuke, Yoshiyuki Naito

Research output: Contribution to journalArticle

5 Citations (Scopus)

Abstract

Wafer direct bonding was demonstrated between InP and magnetooptic materials. The effects of chemical treatment of two wafers before placing them into contact were investigated in order to enhance the durability of the bonded wafers through the various device fabrication processes. Phosphoric acid etching at a low temperature proved to be the most suitable treatment for the bonding between InP and gadolinium gallium garnet Gd3Ga5O12. In the case of this treatment, the bonding was studied between a planar InP substrate and magnetooptic waveguides on the garnet films.

Original languageEnglish
Pages (from-to)4138-4140
Number of pages3
JournalJapanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
Volume35
Issue number7
Publication statusPublished - 1996 Jul
Externally publishedYes

Fingerprint

Magnetooptical effects
Waveguides
Garnets
wafers
waveguides
Substrates
gadolinium-gallium garnet
Gadolinium
phosphoric acid
Phosphoric acid
Gallium
durability
garnets
Etching
Durability
etching
Fabrication
fabrication
Temperature

Keywords

  • Direct bonding
  • Garnets
  • InP
  • Rib waveguide
  • SEM

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)
  • Engineering(all)

Cite this

Direct bonding between InP substrate and magnetooptic waveguides. / Yokoi, Hideki; Mizumoto, Tetsuya; Maru, Koichi; Fuke, Nobutaka; Naito, Yoshiyuki.

In: Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, Vol. 35, No. 7, 07.1996, p. 4138-4140.

Research output: Contribution to journalArticle

Yokoi, Hideki ; Mizumoto, Tetsuya ; Maru, Koichi ; Fuke, Nobutaka ; Naito, Yoshiyuki. / Direct bonding between InP substrate and magnetooptic waveguides. In: Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers. 1996 ; Vol. 35, No. 7. pp. 4138-4140.
@article{35c9c688192143d1acc13078d45f6188,
title = "Direct bonding between InP substrate and magnetooptic waveguides",
abstract = "Wafer direct bonding was demonstrated between InP and magnetooptic materials. The effects of chemical treatment of two wafers before placing them into contact were investigated in order to enhance the durability of the bonded wafers through the various device fabrication processes. Phosphoric acid etching at a low temperature proved to be the most suitable treatment for the bonding between InP and gadolinium gallium garnet Gd3Ga5O12. In the case of this treatment, the bonding was studied between a planar InP substrate and magnetooptic waveguides on the garnet films.",
keywords = "Direct bonding, Garnets, InP, Rib waveguide, SEM",
author = "Hideki Yokoi and Tetsuya Mizumoto and Koichi Maru and Nobutaka Fuke and Yoshiyuki Naito",
year = "1996",
month = "7",
language = "English",
volume = "35",
pages = "4138--4140",
journal = "Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes",
issn = "0021-4922",
publisher = "Japan Society of Applied Physics",
number = "7",

}

TY - JOUR

T1 - Direct bonding between InP substrate and magnetooptic waveguides

AU - Yokoi, Hideki

AU - Mizumoto, Tetsuya

AU - Maru, Koichi

AU - Fuke, Nobutaka

AU - Naito, Yoshiyuki

PY - 1996/7

Y1 - 1996/7

N2 - Wafer direct bonding was demonstrated between InP and magnetooptic materials. The effects of chemical treatment of two wafers before placing them into contact were investigated in order to enhance the durability of the bonded wafers through the various device fabrication processes. Phosphoric acid etching at a low temperature proved to be the most suitable treatment for the bonding between InP and gadolinium gallium garnet Gd3Ga5O12. In the case of this treatment, the bonding was studied between a planar InP substrate and magnetooptic waveguides on the garnet films.

AB - Wafer direct bonding was demonstrated between InP and magnetooptic materials. The effects of chemical treatment of two wafers before placing them into contact were investigated in order to enhance the durability of the bonded wafers through the various device fabrication processes. Phosphoric acid etching at a low temperature proved to be the most suitable treatment for the bonding between InP and gadolinium gallium garnet Gd3Ga5O12. In the case of this treatment, the bonding was studied between a planar InP substrate and magnetooptic waveguides on the garnet films.

KW - Direct bonding

KW - Garnets

KW - InP

KW - Rib waveguide

KW - SEM

UR - http://www.scopus.com/inward/record.url?scp=0030193689&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0030193689&partnerID=8YFLogxK

M3 - Article

VL - 35

SP - 4138

EP - 4140

JO - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes

JF - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes

SN - 0021-4922

IS - 7

ER -