Direct bonding between InP substrate and magnetooptic waveguides

Hideki Yokoi; Tetsuya Mizumoto; Koichi Maru; Nobutaka Fuke; Yoshiyuki Naito

doi:10.1143/jjap.35.4138

Direct bonding between InP substrate and magnetooptic waveguides

Hideki Yokoi, Tetsuya Mizumoto, Koichi Maru, Nobutaka Fuke, Yoshiyuki Naito

Research output: Contribution to journal › Article › peer-review

5 Citations (Scopus)

Abstract

Wafer direct bonding was demonstrated between InP and magnetooptic materials. The effects of chemical treatment of two wafers before placing them into contact were investigated in order to enhance the durability of the bonded wafers through the various device fabrication processes. Phosphoric acid etching at a low temperature proved to be the most suitable treatment for the bonding between InP and gadolinium gallium garnet Gd₃Ga₅O₁₂. In the case of this treatment, the bonding was studied between a planar InP substrate and magnetooptic waveguides on the garnet films.

Original language	English
Pages (from-to)	4138-4140
Number of pages	3
Journal	Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
Volume	35
Issue number	7
DOIs	https://doi.org/10.1143/jjap.35.4138
Publication status	Published - 1996 Jul
Externally published	Yes

Keywords

Direct bonding
Garnets
InP
Rib waveguide
SEM

ASJC Scopus subject areas

Engineering(all)
Physics and Astronomy(all)

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title = "Direct bonding between InP substrate and magnetooptic waveguides",

abstract = "Wafer direct bonding was demonstrated between InP and magnetooptic materials. The effects of chemical treatment of two wafers before placing them into contact were investigated in order to enhance the durability of the bonded wafers through the various device fabrication processes. Phosphoric acid etching at a low temperature proved to be the most suitable treatment for the bonding between InP and gadolinium gallium garnet Gd3Ga5O12. In the case of this treatment, the bonding was studied between a planar InP substrate and magnetooptic waveguides on the garnet films.",

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author = "Hideki Yokoi and Tetsuya Mizumoto and Koichi Maru and Nobutaka Fuke and Yoshiyuki Naito",

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doi = "10.1143/jjap.35.4138",

language = "English",

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T1 - Direct bonding between InP substrate and magnetooptic waveguides

AU - Yokoi, Hideki

AU - Mizumoto, Tetsuya

AU - Maru, Koichi

AU - Fuke, Nobutaka

AU - Naito, Yoshiyuki

PY - 1996/7

Y1 - 1996/7

N2 - Wafer direct bonding was demonstrated between InP and magnetooptic materials. The effects of chemical treatment of two wafers before placing them into contact were investigated in order to enhance the durability of the bonded wafers through the various device fabrication processes. Phosphoric acid etching at a low temperature proved to be the most suitable treatment for the bonding between InP and gadolinium gallium garnet Gd3Ga5O12. In the case of this treatment, the bonding was studied between a planar InP substrate and magnetooptic waveguides on the garnet films.

AB - Wafer direct bonding was demonstrated between InP and magnetooptic materials. The effects of chemical treatment of two wafers before placing them into contact were investigated in order to enhance the durability of the bonded wafers through the various device fabrication processes. Phosphoric acid etching at a low temperature proved to be the most suitable treatment for the bonding between InP and gadolinium gallium garnet Gd3Ga5O12. In the case of this treatment, the bonding was studied between a planar InP substrate and magnetooptic waveguides on the garnet films.

KW - Direct bonding

KW - Garnets

KW - InP

KW - Rib waveguide

KW - SEM

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JO - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes

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ER -

Direct bonding between InP substrate and magnetooptic waveguides

Abstract

Keywords

ASJC Scopus subject areas

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