Abstract
Wafer direct bonding was demonstrated between InP and magnetooptic materials. The effects of chemical treatment of two wafers before placing them into contact were investigated in order to enhance the durability of the bonded wafers through the various device fabrication processes. Phosphoric acid etching at a low temperature proved to be the most suitable treatment for the bonding between InP and gadolinium gallium garnet Gd3Ga5O12. In the case of this treatment, the bonding was studied between a planar InP substrate and magnetooptic waveguides on the garnet films.
| Original language | English |
|---|---|
| Pages (from-to) | 4138-4140 |
| Number of pages | 3 |
| Journal | Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers |
| Volume | 35 |
| Issue number | 7 |
| Publication status | Published - 1996 Jul |
| Externally published | Yes |
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Keywords
- Direct bonding
- Garnets
- InP
- Rib waveguide
- SEM
ASJC Scopus subject areas
- Physics and Astronomy (miscellaneous)
- Engineering(all)
Cite this
Direct bonding between InP substrate and magnetooptic waveguides. / Yokoi, Hideki; Mizumoto, Tetsuya; Maru, Koichi; Fuke, Nobutaka; Naito, Yoshiyuki.
In: Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, Vol. 35, No. 7, 07.1996, p. 4138-4140.Research output: Contribution to journal › Article
}
TY - JOUR
T1 - Direct bonding between InP substrate and magnetooptic waveguides
AU - Yokoi, Hideki
AU - Mizumoto, Tetsuya
AU - Maru, Koichi
AU - Fuke, Nobutaka
AU - Naito, Yoshiyuki
PY - 1996/7
Y1 - 1996/7
N2 - Wafer direct bonding was demonstrated between InP and magnetooptic materials. The effects of chemical treatment of two wafers before placing them into contact were investigated in order to enhance the durability of the bonded wafers through the various device fabrication processes. Phosphoric acid etching at a low temperature proved to be the most suitable treatment for the bonding between InP and gadolinium gallium garnet Gd3Ga5O12. In the case of this treatment, the bonding was studied between a planar InP substrate and magnetooptic waveguides on the garnet films.
AB - Wafer direct bonding was demonstrated between InP and magnetooptic materials. The effects of chemical treatment of two wafers before placing them into contact were investigated in order to enhance the durability of the bonded wafers through the various device fabrication processes. Phosphoric acid etching at a low temperature proved to be the most suitable treatment for the bonding between InP and gadolinium gallium garnet Gd3Ga5O12. In the case of this treatment, the bonding was studied between a planar InP substrate and magnetooptic waveguides on the garnet films.
KW - Direct bonding
KW - Garnets
KW - InP
KW - Rib waveguide
KW - SEM
UR - http://www.scopus.com/inward/record.url?scp=0030193689&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=0030193689&partnerID=8YFLogxK
M3 - Article
AN - SCOPUS:0030193689
VL - 35
SP - 4138
EP - 4140
JO - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes
JF - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes
SN - 0021-4922
IS - 7
ER -