Direct bonding between laser wafers and magneto-optic waveguides

Hideki Yokoi, Tetsuya Mizumoto, Koichi Maru, Yoshiyuki Naito

Research output: Contribution to conferencePaper

Abstract

Wafer direct bonding is an attractive technique for the integration of different materials. In a previous study, the bonding between InP and several kinds of garnets which are essential to an optical isolator was demonstrated. When the optical isolator is integrated with the laser wafer as shown in Fig. 1, the surface of garnet wafer where a rib waveguide is formed is to be bonded with an etch stop layer for the vertical alignment. This paper reports the direct bonding between GaInAsP etch stop layer and Gd3Ga5O12 (GGG) which is used as a substrate for magneto-optic crystal growth. The bonding is also described between InP and the garnet rib waveguide.

Original languageEnglish
Number of pages1
Publication statusPublished - 1996 Jan 1
Externally publishedYes
EventProceedings of the 1996 Conference on Lasers and Electro-Optics Europe, CLEO/Europe - Hamburg, Ger
Duration: 1996 Sep 81996 Sep 13

Other

OtherProceedings of the 1996 Conference on Lasers and Electro-Optics Europe, CLEO/Europe
CityHamburg, Ger
Period96/9/896/9/13

ASJC Scopus subject areas

  • Control and Systems Engineering
  • Electrical and Electronic Engineering

Fingerprint Dive into the research topics of 'Direct bonding between laser wafers and magneto-optic waveguides'. Together they form a unique fingerprint.

  • Cite this

    Yokoi, H., Mizumoto, T., Maru, K., & Naito, Y. (1996). Direct bonding between laser wafers and magneto-optic waveguides. Paper presented at Proceedings of the 1996 Conference on Lasers and Electro-Optics Europe, CLEO/Europe, Hamburg, Ger, .