Direct bonding between quaternary compound semiconductor and garnet crystals for integrated optical isolator

Hideki Yokoi, Tetsuya Mizumoto, Masafumi Shimizu, Naoki Futakuchi, Noriaki Kaida, Yoshiaki Nakano

Research output: Contribution to journalArticle

7 Citations (Scopus)

Abstract

An integrated optical isolator employing a nonreciprocal phase shift is very attractive because it does not need phase matching. We have investigated a novel configuration of the integrated optical isolator, employing the nonreciprocal phase shift, in which the magnetooptic waveguide has a magnetic garnet/GalnAsP/InP structure. The wafer direct bonding technique is necessary to realize this structure. The direct bonding between quaternary III-V compound semiconductors and garnet crystals was experimentally studied. The bonding was achieved by chemical treatment and subsequent heat treatment at temperatures ranging from 110 to 330°C. Cross-sectional scanning electron microscope (SEM) images indicated that there were no gaps between the two wafers in contact.

Original languageEnglish
Pages (from-to)195-197
Number of pages3
JournalJapanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
Volume38
Issue number1
Publication statusPublished - 1999
Externally publishedYes

Fingerprint

isolators
Garnets
garnets
Semiconductor materials
Phase shift
Crystals
phase shift
wafers
crystals
Magnetooptical effects
Phase matching
phase matching
Waveguides
heat treatment
Electron microscopes
electron microscopes
Heat treatment
waveguides
Scanning
scanning

Keywords

  • Magnetic garnets
  • Optical isolator
  • SEM
  • Semiconductor
  • Wafer direct bonding

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Cite this

Direct bonding between quaternary compound semiconductor and garnet crystals for integrated optical isolator. / Yokoi, Hideki; Mizumoto, Tetsuya; Shimizu, Masafumi; Futakuchi, Naoki; Kaida, Noriaki; Nakano, Yoshiaki.

In: Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, Vol. 38, No. 1, 1999, p. 195-197.

Research output: Contribution to journalArticle

@article{fbd94bdbd6274533bf59a1a98ddacc31,
title = "Direct bonding between quaternary compound semiconductor and garnet crystals for integrated optical isolator",
abstract = "An integrated optical isolator employing a nonreciprocal phase shift is very attractive because it does not need phase matching. We have investigated a novel configuration of the integrated optical isolator, employing the nonreciprocal phase shift, in which the magnetooptic waveguide has a magnetic garnet/GalnAsP/InP structure. The wafer direct bonding technique is necessary to realize this structure. The direct bonding between quaternary III-V compound semiconductors and garnet crystals was experimentally studied. The bonding was achieved by chemical treatment and subsequent heat treatment at temperatures ranging from 110 to 330°C. Cross-sectional scanning electron microscope (SEM) images indicated that there were no gaps between the two wafers in contact.",
keywords = "Magnetic garnets, Optical isolator, SEM, Semiconductor, Wafer direct bonding",
author = "Hideki Yokoi and Tetsuya Mizumoto and Masafumi Shimizu and Naoki Futakuchi and Noriaki Kaida and Yoshiaki Nakano",
year = "1999",
language = "English",
volume = "38",
pages = "195--197",
journal = "Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes",
issn = "0021-4922",
publisher = "Japan Society of Applied Physics",
number = "1",

}

TY - JOUR

T1 - Direct bonding between quaternary compound semiconductor and garnet crystals for integrated optical isolator

AU - Yokoi, Hideki

AU - Mizumoto, Tetsuya

AU - Shimizu, Masafumi

AU - Futakuchi, Naoki

AU - Kaida, Noriaki

AU - Nakano, Yoshiaki

PY - 1999

Y1 - 1999

N2 - An integrated optical isolator employing a nonreciprocal phase shift is very attractive because it does not need phase matching. We have investigated a novel configuration of the integrated optical isolator, employing the nonreciprocal phase shift, in which the magnetooptic waveguide has a magnetic garnet/GalnAsP/InP structure. The wafer direct bonding technique is necessary to realize this structure. The direct bonding between quaternary III-V compound semiconductors and garnet crystals was experimentally studied. The bonding was achieved by chemical treatment and subsequent heat treatment at temperatures ranging from 110 to 330°C. Cross-sectional scanning electron microscope (SEM) images indicated that there were no gaps between the two wafers in contact.

AB - An integrated optical isolator employing a nonreciprocal phase shift is very attractive because it does not need phase matching. We have investigated a novel configuration of the integrated optical isolator, employing the nonreciprocal phase shift, in which the magnetooptic waveguide has a magnetic garnet/GalnAsP/InP structure. The wafer direct bonding technique is necessary to realize this structure. The direct bonding between quaternary III-V compound semiconductors and garnet crystals was experimentally studied. The bonding was achieved by chemical treatment and subsequent heat treatment at temperatures ranging from 110 to 330°C. Cross-sectional scanning electron microscope (SEM) images indicated that there were no gaps between the two wafers in contact.

KW - Magnetic garnets

KW - Optical isolator

KW - SEM

KW - Semiconductor

KW - Wafer direct bonding

UR - http://www.scopus.com/inward/record.url?scp=0032686586&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0032686586&partnerID=8YFLogxK

M3 - Article

VL - 38

SP - 195

EP - 197

JO - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes

JF - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes

SN - 0021-4922

IS - 1

ER -