Direct deposition of multilayer graphene on dielectrics via solid-phase precipitation from carbon-doped cobalt with a copper capping layer

Kazuyoshi Ueno, Shota Sano, Yuji Matsumoto

Research output: Contribution to journalArticle

Abstract

A method for producing a uniform multilayer graphene (MLG) film directly on SiO 2 via solid-phase precipitation from carbon-doped cobalt (Co-C) with a Cu capping layer has been developed for a large scale integration (LSI) interconnect application. One advantage is that no transfer process is required. A 20 nm thick MLG film was grown uniformly from a 100 nm thick Co-C (20 at%) catalyst layer with a Cu capping layer. Cross-sectional TEM/EDX images revealed that the optimized Cu capping layer prevents Co agglomeration during annealing and promotes C precipitation on the SiO 2 while eliminating it on the top surface of the catalytic metals.

Original languageEnglish
Article number026501
JournalJapanese Journal of Applied Physics
Volume58
Issue number2
DOIs
Publication statusPublished - 2019 Jan 1

Fingerprint

Graphene
solid phases
Cobalt
graphene
Multilayers
cobalt
Copper
LSI circuits
copper
Carbon
carbon
Energy dispersive spectroscopy
Agglomeration
Annealing
Transmission electron microscopy
Catalysts
large scale integration
agglomeration
Metals
catalysts

ASJC Scopus subject areas

  • Engineering(all)
  • Physics and Astronomy(all)

Cite this

Direct deposition of multilayer graphene on dielectrics via solid-phase precipitation from carbon-doped cobalt with a copper capping layer. / Ueno, Kazuyoshi; Sano, Shota; Matsumoto, Yuji.

In: Japanese Journal of Applied Physics, Vol. 58, No. 2, 026501, 01.01.2019.

Research output: Contribution to journalArticle

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