Direct writing of channels for microfluidics in silica by MeV ion beam lithography

Nitipon Puttaraksa, Mari Napari, Orapin Chienthavorn, Rattanaporn Norarat, Timo Sajavaara, Mikko Laitinen, Somsorn Singkarat, Harry J. Whitlow

Research output: Chapter in Book/Report/Conference proceedingConference contribution

3 Citations (Scopus)

Abstract

The lithographic exposure characteristic of amorphous silica (SiO 2) was investigated for 6.8 MeV 16O3+ ions. A programmable proximity aperture lithography (PPAL) technique was used for the ion beam exposure. After exposure, the exposed pattern was developed by selective etching in 4% v/v HF. Here, we report on the development of SiO 2 in term of the etch depth dependence on the ion fluence. This showed an exponential approach towards a constant asymptotic etch depth with increasing ion fluence. An example of microfluidic channels produced by this technique is demonstrated.

Original languageEnglish
Title of host publicationNEMS/MEMS Technology and Devices
Pages132-135
Number of pages4
DOIs
Publication statusPublished - 2011
Externally publishedYes
EventInternational Conference on Materials for Advanced Technologies, ICMAT2011 - Symposium G: NEMS/MEMS and MicroTAS - Suntec, Singapore
Duration: 2011 Jun 262011 Jul 1

Publication series

NameAdvanced Materials Research
Volume254
ISSN (Print)1022-6680

Conference

ConferenceInternational Conference on Materials for Advanced Technologies, ICMAT2011 - Symposium G: NEMS/MEMS and MicroTAS
Country/TerritorySingapore
CitySuntec
Period11/6/2611/7/1

Keywords

  • Direct writing
  • Etching
  • MeV ion beam lithography
  • Microfluidic channels
  • Silica

ASJC Scopus subject areas

  • Engineering(all)

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