Direct writing of channels for microfluidics in silica by MeV ion beam lithography

Nitipon Puttaraksa; Mari Napari; Orapin Chienthavorn; Rattanaporn Norarat; Timo Sajavaara; Mikko Laitinen; Somsorn Singkarat; Harry J. Whitlow

doi:10.4028/www.scientific.net/AMR.254.132

Direct writing of channels for microfluidics in silica by MeV ion beam lithography

Nitipon Puttaraksa, Mari Napari, Orapin Chienthavorn, Rattanaporn Norarat, Timo Sajavaara, Mikko Laitinen, Somsorn Singkarat, Harry J. Whitlow

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

3 Citations (Scopus)

Abstract

The lithographic exposure characteristic of amorphous silica (SiO ₂) was investigated for 6.8 MeV ¹⁶O³⁺ ions. A programmable proximity aperture lithography (PPAL) technique was used for the ion beam exposure. After exposure, the exposed pattern was developed by selective etching in 4% v/v HF. Here, we report on the development of SiO ₂ in term of the etch depth dependence on the ion fluence. This showed an exponential approach towards a constant asymptotic etch depth with increasing ion fluence. An example of microfluidic channels produced by this technique is demonstrated.

Original language	English
Title of host publication	NEMS/MEMS Technology and Devices
Pages	132-135
Number of pages	4
DOIs	https://doi.org/10.4028/www.scientific.net/AMR.254.132
Publication status	Published - 2011
Externally published	Yes
Event	International Conference on Materials for Advanced Technologies, ICMAT2011 - Symposium G: NEMS/MEMS and MicroTAS - Suntec, Singapore Duration: 2011 Jun 26 → 2011 Jul 1

Publication series

Name	Advanced Materials Research
Volume	254
ISSN (Print)	1022-6680

Conference

Conference	International Conference on Materials for Advanced Technologies, ICMAT2011 - Symposium G: NEMS/MEMS and MicroTAS
Country/Territory	Singapore
City	Suntec
Period	11/6/26 → 11/7/1

Keywords

Direct writing
Etching
MeV ion beam lithography
Microfluidic channels
Silica

ASJC Scopus subject areas

Engineering(all)

Access to Document

10.4028/www.scientific.net/AMR.254.132

Cite this

Puttaraksa, N, Napari, M, Chienthavorn, O, Norarat, R, Sajavaara, T, Laitinen, M, Singkarat, S & Whitlow, HJ 2011, Direct writing of channels for microfluidics in silica by MeV ion beam lithography. in NEMS/MEMS Technology and Devices. Advanced Materials Research, vol. 254, pp. 132-135, International Conference on Materials for Advanced Technologies, ICMAT2011 - Symposium G: NEMS/MEMS and MicroTAS, Suntec, Singapore, 11/6/26. https://doi.org/10.4028/www.scientific.net/AMR.254.132

@inproceedings{40a67eccf6b34438afd42b12262100aa,

title = "Direct writing of channels for microfluidics in silica by MeV ion beam lithography",

abstract = "The lithographic exposure characteristic of amorphous silica (SiO 2) was investigated for 6.8 MeV 16O3+ ions. A programmable proximity aperture lithography (PPAL) technique was used for the ion beam exposure. After exposure, the exposed pattern was developed by selective etching in 4% v/v HF. Here, we report on the development of SiO 2 in term of the etch depth dependence on the ion fluence. This showed an exponential approach towards a constant asymptotic etch depth with increasing ion fluence. An example of microfluidic channels produced by this technique is demonstrated.",

keywords = "Direct writing, Etching, MeV ion beam lithography, Microfluidic channels, Silica",

author = "Nitipon Puttaraksa and Mari Napari and Orapin Chienthavorn and Rattanaporn Norarat and Timo Sajavaara and Mikko Laitinen and Somsorn Singkarat and Whitlow, {Harry J.}",

year = "2011",

doi = "10.4028/www.scientific.net/AMR.254.132",

language = "English",

isbn = "9783037851456",

series = "Advanced Materials Research",

pages = "132--135",

booktitle = "NEMS/MEMS Technology and Devices",

note = "International Conference on Materials for Advanced Technologies, ICMAT2011 - Symposium G: NEMS/MEMS and MicroTAS ; Conference date: 26-06-2011 Through 01-07-2011",

}

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T1 - Direct writing of channels for microfluidics in silica by MeV ion beam lithography

AU - Puttaraksa, Nitipon

AU - Napari, Mari

AU - Chienthavorn, Orapin

AU - Norarat, Rattanaporn

AU - Sajavaara, Timo

AU - Laitinen, Mikko

AU - Singkarat, Somsorn

AU - Whitlow, Harry J.

PY - 2011

Y1 - 2011

N2 - The lithographic exposure characteristic of amorphous silica (SiO 2) was investigated for 6.8 MeV 16O3+ ions. A programmable proximity aperture lithography (PPAL) technique was used for the ion beam exposure. After exposure, the exposed pattern was developed by selective etching in 4% v/v HF. Here, we report on the development of SiO 2 in term of the etch depth dependence on the ion fluence. This showed an exponential approach towards a constant asymptotic etch depth with increasing ion fluence. An example of microfluidic channels produced by this technique is demonstrated.

AB - The lithographic exposure characteristic of amorphous silica (SiO 2) was investigated for 6.8 MeV 16O3+ ions. A programmable proximity aperture lithography (PPAL) technique was used for the ion beam exposure. After exposure, the exposed pattern was developed by selective etching in 4% v/v HF. Here, we report on the development of SiO 2 in term of the etch depth dependence on the ion fluence. This showed an exponential approach towards a constant asymptotic etch depth with increasing ion fluence. An example of microfluidic channels produced by this technique is demonstrated.

KW - Direct writing

KW - Etching

KW - MeV ion beam lithography

KW - Microfluidic channels

KW - Silica

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U2 - 10.4028/www.scientific.net/AMR.254.132

DO - 10.4028/www.scientific.net/AMR.254.132

M3 - Conference contribution

AN - SCOPUS:79960058706

SN - 9783037851456

T3 - Advanced Materials Research

SP - 132

EP - 135

BT - NEMS/MEMS Technology and Devices

T2 - International Conference on Materials for Advanced Technologies, ICMAT2011 - Symposium G: NEMS/MEMS and MicroTAS

Y2 - 26 June 2011 through 1 July 2011

ER -

Direct writing of channels for microfluidics in silica by MeV ion beam lithography

Abstract

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Keywords

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