TY - GEN
T1 - Direct writing of channels for microfluidics in silica by MeV ion beam lithography
AU - Puttaraksa, Nitipon
AU - Napari, Mari
AU - Chienthavorn, Orapin
AU - Norarat, Rattanaporn
AU - Sajavaara, Timo
AU - Laitinen, Mikko
AU - Singkarat, Somsorn
AU - Whitlow, Harry J.
PY - 2011
Y1 - 2011
N2 - The lithographic exposure characteristic of amorphous silica (SiO 2) was investigated for 6.8 MeV 16O3+ ions. A programmable proximity aperture lithography (PPAL) technique was used for the ion beam exposure. After exposure, the exposed pattern was developed by selective etching in 4% v/v HF. Here, we report on the development of SiO 2 in term of the etch depth dependence on the ion fluence. This showed an exponential approach towards a constant asymptotic etch depth with increasing ion fluence. An example of microfluidic channels produced by this technique is demonstrated.
AB - The lithographic exposure characteristic of amorphous silica (SiO 2) was investigated for 6.8 MeV 16O3+ ions. A programmable proximity aperture lithography (PPAL) technique was used for the ion beam exposure. After exposure, the exposed pattern was developed by selective etching in 4% v/v HF. Here, we report on the development of SiO 2 in term of the etch depth dependence on the ion fluence. This showed an exponential approach towards a constant asymptotic etch depth with increasing ion fluence. An example of microfluidic channels produced by this technique is demonstrated.
KW - Direct writing
KW - Etching
KW - MeV ion beam lithography
KW - Microfluidic channels
KW - Silica
UR - http://www.scopus.com/inward/record.url?scp=79960058706&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=79960058706&partnerID=8YFLogxK
U2 - 10.4028/www.scientific.net/AMR.254.132
DO - 10.4028/www.scientific.net/AMR.254.132
M3 - Conference contribution
AN - SCOPUS:79960058706
SN - 9783037851456
T3 - Advanced Materials Research
SP - 132
EP - 135
BT - NEMS/MEMS Technology and Devices
T2 - International Conference on Materials for Advanced Technologies, ICMAT2011 - Symposium G: NEMS/MEMS and MicroTAS
Y2 - 26 June 2011 through 1 July 2011
ER -