Distinct fine and coarse ripples on 4H-SiC single crystal induced by femtosecond laser irradiation

Takuro Tomita; Keita Kinoshita; Shigeki Matsuo; Shuichi Hashimoto

doi:10.1143/JJAP.45.L444

Distinct fine and coarse ripples on 4H-SiC single crystal induced by femtosecond laser irradiation

Takuro Tomita, Keita Kinoshita, Shigeki Matsuo, Shuichi Hashimoto

Research output: Contribution to journal › Article › peer-review

38 Citations (Scopus)

Abstract

Upon femtosecond pulsed-laser irradiation, periodic structures referred to as "ripples" were fabricated on the surface of a 4H-SiC single crystal. The periodic structures consisted of two concentric regions in the irradiated spots which were clearly distinguished by the period. Surface morphologies were characterized as a function of energy, accumulation number, and interval of pulses. The difference in the threshold of fine and coarse ripples was identified for the first time. The possible formation mechanisms of these structures were discussed.

Original language	English
Pages (from-to)	L444-L446
Journal	Japanese Journal of Applied Physics, Part 2: Letters
Volume	45
Issue number	12-16
DOIs	https://doi.org/10.1143/JJAP.45.L444
Publication status	Published - 2006 May 17
Externally published	Yes

Keywords

4H-SiC
Ablation
Femtosecond laser
Ripple

ASJC Scopus subject areas

Engineering(all)
Physics and Astronomy (miscellaneous)
Physics and Astronomy(all)

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AU - Tomita, Takuro

AU - Kinoshita, Keita

AU - Matsuo, Shigeki

AU - Hashimoto, Shuichi

PY - 2006/5/17

Y1 - 2006/5/17

N2 - Upon femtosecond pulsed-laser irradiation, periodic structures referred to as "ripples" were fabricated on the surface of a 4H-SiC single crystal. The periodic structures consisted of two concentric regions in the irradiated spots which were clearly distinguished by the period. Surface morphologies were characterized as a function of energy, accumulation number, and interval of pulses. The difference in the threshold of fine and coarse ripples was identified for the first time. The possible formation mechanisms of these structures were discussed.

AB - Upon femtosecond pulsed-laser irradiation, periodic structures referred to as "ripples" were fabricated on the surface of a 4H-SiC single crystal. The periodic structures consisted of two concentric regions in the irradiated spots which were clearly distinguished by the period. Surface morphologies were characterized as a function of energy, accumulation number, and interval of pulses. The difference in the threshold of fine and coarse ripples was identified for the first time. The possible formation mechanisms of these structures were discussed.

KW - 4H-SiC

KW - Ablation

KW - Femtosecond laser

KW - Ripple

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JO - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes

JF - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes

SN - 0021-4922

IS - 12-16

ER -

Distinct fine and coarse ripples on 4H-SiC single crystal induced by femtosecond laser irradiation

Abstract

Keywords

ASJC Scopus subject areas

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