Abstract
Upon femtosecond pulsed-laser irradiation, periodic structures referred to as "ripples" were fabricated on the surface of a 4H-SiC single crystal. The periodic structures consisted of two concentric regions in the irradiated spots which were clearly distinguished by the period. Surface morphologies were characterized as a function of energy, accumulation number, and interval of pulses. The difference in the threshold of fine and coarse ripples was identified for the first time. The possible formation mechanisms of these structures were discussed.
| Original language | English |
|---|---|
| Pages (from-to) | L444-L446 |
| Journal | Japanese Journal of Applied Physics, Part 2: Letters |
| Volume | 45 |
| Issue number | 12-16 |
| DOIs | |
| Publication status | Published - 2006 May 17 |
Keywords
- 4H-SiC
- Ablation
- Femtosecond laser
- Ripple
ASJC Scopus subject areas
- Engineering(all)
- Physics and Astronomy (miscellaneous)
- Physics and Astronomy(all)
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Tomita, T., Kinoshita, K., Matsuo, S., & Hashimoto, S. (2006). Distinct fine and coarse ripples on 4H-SiC single crystal induced by femtosecond laser irradiation. Japanese Journal of Applied Physics, Part 2: Letters, 45(12-16), L444-L446. https://doi.org/10.1143/JJAP.45.L444