Distinct fine and coarse ripples on 4H-SiC single crystal induced by femtosecond laser irradiation

Takuro Tomita, Keita Kinoshita, Shigeki Matsuo, Shuichi Hashimoto

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38 Citations (Scopus)

Abstract

Upon femtosecond pulsed-laser irradiation, periodic structures referred to as "ripples" were fabricated on the surface of a 4H-SiC single crystal. The periodic structures consisted of two concentric regions in the irradiated spots which were clearly distinguished by the period. Surface morphologies were characterized as a function of energy, accumulation number, and interval of pulses. The difference in the threshold of fine and coarse ripples was identified for the first time. The possible formation mechanisms of these structures were discussed.

Original languageEnglish
Pages (from-to)L444-L446
JournalJapanese Journal of Applied Physics, Part 2: Letters
Volume45
Issue number12-16
DOIs
Publication statusPublished - 2006 May 17
Externally publishedYes

Keywords

  • 4H-SiC
  • Ablation
  • Femtosecond laser
  • Ripple

ASJC Scopus subject areas

  • Engineering(all)
  • Physics and Astronomy (miscellaneous)
  • Physics and Astronomy(all)

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