Abstract
Upon femtosecond pulsed-laser irradiation, periodic structures referred to as "ripples" were fabricated on the surface of a 4H-SiC single crystal. The periodic structures consisted of two concentric regions in the irradiated spots which were clearly distinguished by the period. Surface morphologies were characterized as a function of energy, accumulation number, and interval of pulses. The difference in the threshold of fine and coarse ripples was identified for the first time. The possible formation mechanisms of these structures were discussed.
| Original language | English |
|---|---|
| Journal | Japanese Journal of Applied Physics, Part 2: Letters |
| Volume | 45 |
| Issue number | 12-16 |
| DOIs | |
| Publication status | Published - 2006 |
| Externally published | Yes |
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Keywords
- 4H-SiC
- Ablation
- Femtosecond laser
- Ripple
ASJC Scopus subject areas
- Physics and Astronomy (miscellaneous)
Cite this
Distinct fine and coarse ripples on 4H-SiC single crystal induced by femtosecond laser irradiation. / Tomita, Takuro; Kinoshita, Keita; Matsuo, Shigeki; Hashimoto, Shuichi.
In: Japanese Journal of Applied Physics, Part 2: Letters, Vol. 45, No. 12-16, 2006.Research output: Contribution to journal › Article
}
TY - JOUR
T1 - Distinct fine and coarse ripples on 4H-SiC single crystal induced by femtosecond laser irradiation
AU - Tomita, Takuro
AU - Kinoshita, Keita
AU - Matsuo, Shigeki
AU - Hashimoto, Shuichi
PY - 2006
Y1 - 2006
N2 - Upon femtosecond pulsed-laser irradiation, periodic structures referred to as "ripples" were fabricated on the surface of a 4H-SiC single crystal. The periodic structures consisted of two concentric regions in the irradiated spots which were clearly distinguished by the period. Surface morphologies were characterized as a function of energy, accumulation number, and interval of pulses. The difference in the threshold of fine and coarse ripples was identified for the first time. The possible formation mechanisms of these structures were discussed.
AB - Upon femtosecond pulsed-laser irradiation, periodic structures referred to as "ripples" were fabricated on the surface of a 4H-SiC single crystal. The periodic structures consisted of two concentric regions in the irradiated spots which were clearly distinguished by the period. Surface morphologies were characterized as a function of energy, accumulation number, and interval of pulses. The difference in the threshold of fine and coarse ripples was identified for the first time. The possible formation mechanisms of these structures were discussed.
KW - 4H-SiC
KW - Ablation
KW - Femtosecond laser
KW - Ripple
UR - http://www.scopus.com/inward/record.url?scp=33646479360&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=33646479360&partnerID=8YFLogxK
U2 - 10.1143/JJAP.45.L444
DO - 10.1143/JJAP.45.L444
M3 - Article
AN - SCOPUS:33646479360
VL - 45
JO - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes
JF - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes
SN - 0021-4922
IS - 12-16
ER -