Domain-wall resistance at low temperature

I. Knittel; S. Faas; M. A. Gothe; Michael Rudolf Koblischka; U. Hartmann

doi:10.1016/j.jmmm.2003.12.1033

Domain-wall resistance at low temperature

I. Knittel, S. Faas, M. A. Gothe, Michael Rudolf Koblischka, U. Hartmann

Research output: Contribution to journal › Article

1 Citation (Scopus)

Abstract

The physical origin of domain-wall resistance in thin films at low temperature is still unclear. In order to distinguish between spin-dependent phenomena and effects of the Lorentz force as origin of low-temperature domain-wall resistance, a dedicated experiment was developed. Additionally, models of ballistic transport in thin films with surface scattering and domain structure are discussed. As a result, at least part of the observed domain-wall resistance at low temperature can be attributed to surface scattering.

Original language	English
Journal	Journal of Magnetism and Magnetic Materials
Volume	272-276
Issue number	SUPPL. 1
DOIs	https://doi.org/10.1016/j.jmmm.2003.12.1033
Publication status	Published - 2004 May 1
Externally published	Yes

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Keywords

Domain-wall resistance
Lorentz magnetoresistance
Permalloy
Surface scattering

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics

Cite this

Knittel, I., Faas, S., Gothe, M. A., Koblischka, M. R., & Hartmann, U. (2004). Domain-wall resistance at low temperature. Journal of Magnetism and Magnetic Materials, 272-276(SUPPL. 1). https://doi.org/10.1016/j.jmmm.2003.12.1033

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AU - Faas, S.

AU - Gothe, M. A.

AU - Koblischka, Michael Rudolf

AU - Hartmann, U.

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Access to Document

10.1016/j.jmmm.2003.12.1033