Drain-current collapse in AlGaN/GaN HEMTs on sapphire and semi-insulating SiC substrates

S. Arulkumaran, T. Egawa, H. Ishikawa, T. Jimbo

Research output: Contribution to journalArticle

Original languageEnglish
Pages (from-to)E-2-3
JournalDefault journal
Publication statusPublished - 2002 Sep 1

Cite this

Drain-current collapse in AlGaN/GaN HEMTs on sapphire and semi-insulating SiC substrates. / Arulkumaran, S.; Egawa, T.; Ishikawa, H.; Jimbo, T.

In: Default journal, 01.09.2002, p. E-2-3.

Research output: Contribution to journalArticle

@article{c2425108d74d4324aeada7de7b86fe4d,
title = "Drain-current collapse in AlGaN/GaN HEMTs on sapphire and semi-insulating SiC substrates",
author = "S. Arulkumaran and T. Egawa and H. Ishikawa and T. Jimbo",
year = "2002",
month = "9",
day = "1",
language = "English",
pages = "E--2--3",
journal = "Default journal",

}

TY - JOUR

T1 - Drain-current collapse in AlGaN/GaN HEMTs on sapphire and semi-insulating SiC substrates

AU - Arulkumaran, S.

AU - Egawa, T.

AU - Ishikawa, H.

AU - Jimbo, T.

PY - 2002/9/1

Y1 - 2002/9/1

M3 - Article

SP - E-2-3

JO - Default journal

JF - Default journal

ER -