EBIC observation of n-GaN grown on sapphire substrates by MOCVD

Kensaku Yamamoto, Hiroyasu Ishikawa, Takashi Egawa, Takashi Jimbo, Masayoshi Umeno

Research output: Contribution to journalArticle

17 Citations (Scopus)

Abstract

Si-doped GaN layers were grown on sapphire substrates by metalorganic chemical vapor deposition (MOCVD) and characterized by using electron beam-induced current (EBIC) and molten KOH etching. Dark spot densities in EBIC image are be 1.0 and 1.2 × 108 cm-2 depending on the accelerating voltage. The dark spots in EBIC image correspond to recombination centers. When we compare dark spot density with etch pit density revealed molten KOH, this is the same order as the EPD revealed by molten KOH. We confirm there are many dislocations which influence recombination of minority carriers in the layers.

Original languageEnglish
Pages (from-to)575-579
Number of pages5
JournalJournal of Crystal Growth
Volume189-190
Publication statusPublished - 1998 Jun 15
Externally publishedYes

Fingerprint

Aluminum Oxide
Induced currents
Metallorganic chemical vapor deposition
Sapphire
metalorganic chemical vapor deposition
Molten materials
Electron beams
sapphire
electron beams
Substrates
minority carriers
Etching
etching
Electric potential
electric potential

Keywords

  • Defect
  • EBIC
  • Etch pit density
  • Nonradiative recombination
  • Schottky diodes
  • Si-doped GaN

ASJC Scopus subject areas

  • Condensed Matter Physics

Cite this

Yamamoto, K., Ishikawa, H., Egawa, T., Jimbo, T., & Umeno, M. (1998). EBIC observation of n-GaN grown on sapphire substrates by MOCVD. Journal of Crystal Growth, 189-190, 575-579.

EBIC observation of n-GaN grown on sapphire substrates by MOCVD. / Yamamoto, Kensaku; Ishikawa, Hiroyasu; Egawa, Takashi; Jimbo, Takashi; Umeno, Masayoshi.

In: Journal of Crystal Growth, Vol. 189-190, 15.06.1998, p. 575-579.

Research output: Contribution to journalArticle

Yamamoto, K, Ishikawa, H, Egawa, T, Jimbo, T & Umeno, M 1998, 'EBIC observation of n-GaN grown on sapphire substrates by MOCVD', Journal of Crystal Growth, vol. 189-190, pp. 575-579.
Yamamoto K, Ishikawa H, Egawa T, Jimbo T, Umeno M. EBIC observation of n-GaN grown on sapphire substrates by MOCVD. Journal of Crystal Growth. 1998 Jun 15;189-190:575-579.
Yamamoto, Kensaku ; Ishikawa, Hiroyasu ; Egawa, Takashi ; Jimbo, Takashi ; Umeno, Masayoshi. / EBIC observation of n-GaN grown on sapphire substrates by MOCVD. In: Journal of Crystal Growth. 1998 ; Vol. 189-190. pp. 575-579.
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