EBIC observation of n-GaN grown on sapphire substrates by MOCVD

Kensaku Yamamoto, Hiroyasu Ishikawa, Takashi Egawa, Takashi Jimbo, Masayoshi Umeno

Research output: Contribution to journalArticle

17 Citations (Scopus)

Abstract

Si-doped GaN layers were grown on sapphire substrates by metalorganic chemical vapor deposition (MOCVD) and characterized by using electron beam-induced current (EBIC) and molten KOH etching. Dark spot densities in EBIC image are be 1.0 and 1.2 × 108 cm-2 depending on the accelerating voltage. The dark spots in EBIC image correspond to recombination centers. When we compare dark spot density with etch pit density revealed molten KOH, this is the same order as the EPD revealed by molten KOH. We confirm there are many dislocations which influence recombination of minority carriers in the layers.

Original languageEnglish
Pages (from-to)575-579
Number of pages5
JournalJournal of Crystal Growth
Volume189-190
DOIs
Publication statusPublished - 1998 Jun 15

Keywords

  • Defect
  • EBIC
  • Etch pit density
  • Nonradiative recombination
  • Schottky diodes
  • Si-doped GaN

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Inorganic Chemistry
  • Materials Chemistry

Fingerprint Dive into the research topics of 'EBIC observation of n-GaN grown on sapphire substrates by MOCVD'. Together they form a unique fingerprint.

  • Cite this