Effect of deep-acceptor density in buffer layer on breakdown voltage of AIGaN/GaN HEMTs with high-k passivation layer

S. Ueda, Y. Kawada, Kazushige Horio

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

We make a numerical analysis of breakdown characteristics of AIGaN/GaN HEMTs with a high-k passivation layer, where a deep acceptor above the midgap is considered in a buffer layer and its density NDA is varied between 1017 and 3×l017 cm-3. It is shown that, generally, the breakdown voltage Vbr becomes higher when the relative permittivity of the passivation layer ϵr is higher. In the case where NDA is relatively low, Vbr is determined by impact ionization of carriers when ϵτ, is low, but it becomes determined by buffer leakage current when ϵτ is high, and Vbr becomes saturated with increasing ϵr. On the other hand, when Nda is relatively high, Vbr is determined by impact ionization of carriers even if ϵτ becomes 60, and it becomes about 500 V at the gate-to-drain distance of 1.5 μm, which corresponds to an average electric field of over 3 MV/cm.

Original languageEnglish
Title of host publicationTechConnect Briefs 2018 - Informatics, Electronics and Microsystems
EditorsMatthew Laudon, Fiona Case, Bart Romanowicz, Fiona Case
PublisherTechConnect
Pages24-27
Number of pages4
Volume4
ISBN (Electronic)9780998878256
Publication statusPublished - 2018 Jan 1
Event11th Annual TechConnect World Innovation Conference and Expo, Held Jointly with the 20th Annual Nanotech Conference and Expo,the 2018 SBIR/STTR Spring Innovation Conference, and the Defense TechConnect DTC Spring Conference - Anaheim, United States
Duration: 2018 May 132018 May 16

Other

Other11th Annual TechConnect World Innovation Conference and Expo, Held Jointly with the 20th Annual Nanotech Conference and Expo,the 2018 SBIR/STTR Spring Innovation Conference, and the Defense TechConnect DTC Spring Conference
CountryUnited States
CityAnaheim
Period18/5/1318/5/16

Fingerprint

Impact ionization
High electron mobility transistors
Buffer layers
Electric breakdown
Passivation
Leakage currents
Numerical analysis
Buffers
Permittivity
Electric fields

Keywords

  • Breakdown voltage
  • Buffer latyer
  • Deep acceptor
  • GaN HEMT
  • High-k passivation layer

ASJC Scopus subject areas

  • Materials Science(all)

Cite this

Ueda, S., Kawada, Y., & Horio, K. (2018). Effect of deep-acceptor density in buffer layer on breakdown voltage of AIGaN/GaN HEMTs with high-k passivation layer. In M. Laudon, F. Case, B. Romanowicz, & F. Case (Eds.), TechConnect Briefs 2018 - Informatics, Electronics and Microsystems (Vol. 4, pp. 24-27). TechConnect.

Effect of deep-acceptor density in buffer layer on breakdown voltage of AIGaN/GaN HEMTs with high-k passivation layer. / Ueda, S.; Kawada, Y.; Horio, Kazushige.

TechConnect Briefs 2018 - Informatics, Electronics and Microsystems. ed. / Matthew Laudon; Fiona Case; Bart Romanowicz; Fiona Case. Vol. 4 TechConnect, 2018. p. 24-27.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Ueda, S, Kawada, Y & Horio, K 2018, Effect of deep-acceptor density in buffer layer on breakdown voltage of AIGaN/GaN HEMTs with high-k passivation layer. in M Laudon, F Case, B Romanowicz & F Case (eds), TechConnect Briefs 2018 - Informatics, Electronics and Microsystems. vol. 4, TechConnect, pp. 24-27, 11th Annual TechConnect World Innovation Conference and Expo, Held Jointly with the 20th Annual Nanotech Conference and Expo,the 2018 SBIR/STTR Spring Innovation Conference, and the Defense TechConnect DTC Spring Conference, Anaheim, United States, 18/5/13.
Ueda S, Kawada Y, Horio K. Effect of deep-acceptor density in buffer layer on breakdown voltage of AIGaN/GaN HEMTs with high-k passivation layer. In Laudon M, Case F, Romanowicz B, Case F, editors, TechConnect Briefs 2018 - Informatics, Electronics and Microsystems. Vol. 4. TechConnect. 2018. p. 24-27
Ueda, S. ; Kawada, Y. ; Horio, Kazushige. / Effect of deep-acceptor density in buffer layer on breakdown voltage of AIGaN/GaN HEMTs with high-k passivation layer. TechConnect Briefs 2018 - Informatics, Electronics and Microsystems. editor / Matthew Laudon ; Fiona Case ; Bart Romanowicz ; Fiona Case. Vol. 4 TechConnect, 2018. pp. 24-27
@inproceedings{d86768053b4c4215a40512cf2f4beaba,
title = "Effect of deep-acceptor density in buffer layer on breakdown voltage of AIGaN/GaN HEMTs with high-k passivation layer",
abstract = "We make a numerical analysis of breakdown characteristics of AIGaN/GaN HEMTs with a high-k passivation layer, where a deep acceptor above the midgap is considered in a buffer layer and its density NDA is varied between 1017 and 3×l017 cm-3. It is shown that, generally, the breakdown voltage Vbr becomes higher when the relative permittivity of the passivation layer ϵr is higher. In the case where NDA is relatively low, Vbr is determined by impact ionization of carriers when ϵτ, is low, but it becomes determined by buffer leakage current when ϵτ is high, and Vbr becomes saturated with increasing ϵr. On the other hand, when Nda is relatively high, Vbr is determined by impact ionization of carriers even if ϵτ becomes 60, and it becomes about 500 V at the gate-to-drain distance of 1.5 μm, which corresponds to an average electric field of over 3 MV/cm.",
keywords = "Breakdown voltage, Buffer latyer, Deep acceptor, GaN HEMT, High-k passivation layer",
author = "S. Ueda and Y. Kawada and Kazushige Horio",
year = "2018",
month = "1",
day = "1",
language = "English",
volume = "4",
pages = "24--27",
editor = "Matthew Laudon and Fiona Case and Bart Romanowicz and Fiona Case",
booktitle = "TechConnect Briefs 2018 - Informatics, Electronics and Microsystems",
publisher = "TechConnect",

}

TY - GEN

T1 - Effect of deep-acceptor density in buffer layer on breakdown voltage of AIGaN/GaN HEMTs with high-k passivation layer

AU - Ueda, S.

AU - Kawada, Y.

AU - Horio, Kazushige

PY - 2018/1/1

Y1 - 2018/1/1

N2 - We make a numerical analysis of breakdown characteristics of AIGaN/GaN HEMTs with a high-k passivation layer, where a deep acceptor above the midgap is considered in a buffer layer and its density NDA is varied between 1017 and 3×l017 cm-3. It is shown that, generally, the breakdown voltage Vbr becomes higher when the relative permittivity of the passivation layer ϵr is higher. In the case where NDA is relatively low, Vbr is determined by impact ionization of carriers when ϵτ, is low, but it becomes determined by buffer leakage current when ϵτ is high, and Vbr becomes saturated with increasing ϵr. On the other hand, when Nda is relatively high, Vbr is determined by impact ionization of carriers even if ϵτ becomes 60, and it becomes about 500 V at the gate-to-drain distance of 1.5 μm, which corresponds to an average electric field of over 3 MV/cm.

AB - We make a numerical analysis of breakdown characteristics of AIGaN/GaN HEMTs with a high-k passivation layer, where a deep acceptor above the midgap is considered in a buffer layer and its density NDA is varied between 1017 and 3×l017 cm-3. It is shown that, generally, the breakdown voltage Vbr becomes higher when the relative permittivity of the passivation layer ϵr is higher. In the case where NDA is relatively low, Vbr is determined by impact ionization of carriers when ϵτ, is low, but it becomes determined by buffer leakage current when ϵτ is high, and Vbr becomes saturated with increasing ϵr. On the other hand, when Nda is relatively high, Vbr is determined by impact ionization of carriers even if ϵτ becomes 60, and it becomes about 500 V at the gate-to-drain distance of 1.5 μm, which corresponds to an average electric field of over 3 MV/cm.

KW - Breakdown voltage

KW - Buffer latyer

KW - Deep acceptor

KW - GaN HEMT

KW - High-k passivation layer

UR - http://www.scopus.com/inward/record.url?scp=85050941069&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=85050941069&partnerID=8YFLogxK

M3 - Conference contribution

VL - 4

SP - 24

EP - 27

BT - TechConnect Briefs 2018 - Informatics, Electronics and Microsystems

A2 - Laudon, Matthew

A2 - Case, Fiona

A2 - Romanowicz, Bart

A2 - Case, Fiona

PB - TechConnect

ER -