Abstract
We make a numerical analysis of breakdown characteristics of AIGaN/GaN HEMTs with a high-k passivation layer, where a deep acceptor above the midgap is considered in a buffer layer and its density NDA is varied between 1017 and 3×l017 cm-3. It is shown that, generally, the breakdown voltage Vbr becomes higher when the relative permittivity of the passivation layer ϵr is higher. In the case where NDA is relatively low, Vbr is determined by impact ionization of carriers when ϵτ, is low, but it becomes determined by buffer leakage current when ϵτ is high, and Vbr becomes saturated with increasing ϵr. On the other hand, when Nda is relatively high, Vbr is determined by impact ionization of carriers even if ϵτ becomes 60, and it becomes about 500 V at the gate-to-drain distance of 1.5 μm, which corresponds to an average electric field of over 3 MV/cm.
| Original language | English |
|---|---|
| Title of host publication | TechConnect Briefs 2018 - Informatics, Electronics and Microsystems |
| Editors | Matthew Laudon, Fiona Case, Bart Romanowicz, Fiona Case |
| Publisher | TechConnect |
| Pages | 24-27 |
| Number of pages | 4 |
| Volume | 4 |
| ISBN (Electronic) | 9780998878256 |
| Publication status | Published - 2018 Jan 1 |
| Event | 11th Annual TechConnect World Innovation Conference and Expo, Held Jointly with the 20th Annual Nanotech Conference and Expo,the 2018 SBIR/STTR Spring Innovation Conference, and the Defense TechConnect DTC Spring Conference - Anaheim, United States Duration: 2018 May 13 → 2018 May 16 |
Other
| Other | 11th Annual TechConnect World Innovation Conference and Expo, Held Jointly with the 20th Annual Nanotech Conference and Expo,the 2018 SBIR/STTR Spring Innovation Conference, and the Defense TechConnect DTC Spring Conference |
|---|---|
| Country | United States |
| City | Anaheim |
| Period | 18/5/13 → 18/5/16 |
Fingerprint
Keywords
- Breakdown voltage
- Buffer latyer
- Deep acceptor
- GaN HEMT
- High-k passivation layer
ASJC Scopus subject areas
- Materials Science(all)
Cite this
Effect of deep-acceptor density in buffer layer on breakdown voltage of AIGaN/GaN HEMTs with high-k passivation layer. / Ueda, S.; Kawada, Y.; Horio, Kazushige.
TechConnect Briefs 2018 - Informatics, Electronics and Microsystems. ed. / Matthew Laudon; Fiona Case; Bart Romanowicz; Fiona Case. Vol. 4 TechConnect, 2018. p. 24-27.Research output: Chapter in Book/Report/Conference proceeding › Conference contribution
}
TY - GEN
T1 - Effect of deep-acceptor density in buffer layer on breakdown voltage of AIGaN/GaN HEMTs with high-k passivation layer
AU - Ueda, S.
AU - Kawada, Y.
AU - Horio, Kazushige
PY - 2018/1/1
Y1 - 2018/1/1
N2 - We make a numerical analysis of breakdown characteristics of AIGaN/GaN HEMTs with a high-k passivation layer, where a deep acceptor above the midgap is considered in a buffer layer and its density NDA is varied between 1017 and 3×l017 cm-3. It is shown that, generally, the breakdown voltage Vbr becomes higher when the relative permittivity of the passivation layer ϵr is higher. In the case where NDA is relatively low, Vbr is determined by impact ionization of carriers when ϵτ, is low, but it becomes determined by buffer leakage current when ϵτ is high, and Vbr becomes saturated with increasing ϵr. On the other hand, when Nda is relatively high, Vbr is determined by impact ionization of carriers even if ϵτ becomes 60, and it becomes about 500 V at the gate-to-drain distance of 1.5 μm, which corresponds to an average electric field of over 3 MV/cm.
AB - We make a numerical analysis of breakdown characteristics of AIGaN/GaN HEMTs with a high-k passivation layer, where a deep acceptor above the midgap is considered in a buffer layer and its density NDA is varied between 1017 and 3×l017 cm-3. It is shown that, generally, the breakdown voltage Vbr becomes higher when the relative permittivity of the passivation layer ϵr is higher. In the case where NDA is relatively low, Vbr is determined by impact ionization of carriers when ϵτ, is low, but it becomes determined by buffer leakage current when ϵτ is high, and Vbr becomes saturated with increasing ϵr. On the other hand, when Nda is relatively high, Vbr is determined by impact ionization of carriers even if ϵτ becomes 60, and it becomes about 500 V at the gate-to-drain distance of 1.5 μm, which corresponds to an average electric field of over 3 MV/cm.
KW - Breakdown voltage
KW - Buffer latyer
KW - Deep acceptor
KW - GaN HEMT
KW - High-k passivation layer
UR - http://www.scopus.com/inward/record.url?scp=85050941069&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=85050941069&partnerID=8YFLogxK
M3 - Conference contribution
VL - 4
SP - 24
EP - 27
BT - TechConnect Briefs 2018 - Informatics, Electronics and Microsystems
A2 - Laudon, Matthew
A2 - Case, Fiona
A2 - Romanowicz, Bart
A2 - Case, Fiona
PB - TechConnect
ER -