Effect of deep-acceptor density in buffer layer on breakdown voltage of AIGaN/GaN HEMTs with high-k passivation layer

S. Ueda; Y. Kawada; Kazushige Horio

Effect of deep-acceptor density in buffer layer on breakdown voltage of AIGaN/GaN HEMTs with high-k passivation layer

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

We make a numerical analysis of breakdown characteristics of AIGaN/GaN HEMTs with a high-k passivation layer, where a deep acceptor above the midgap is considered in a buffer layer and its density N_DA is varied between 10¹⁷ and 3×l0¹⁷ cm^-3. It is shown that, generally, the breakdown voltage V_br becomes higher when the relative permittivity of the passivation layer ϵ_r is higher. In the case where N_DA is relatively low, V_br is determined by impact ionization of carriers when ϵ_τ, is low, but it becomes determined by buffer leakage current when ϵ_τ is high, and V_br becomes saturated with increasing ϵ_r. On the other hand, when N_da is relatively high, V_br is determined by impact ionization of carriers even if ϵ_τ becomes 60, and it becomes about 500 V at the gate-to-drain distance of 1.5 μm, which corresponds to an average electric field of over 3 MV/cm.

Original language	English
Title of host publication	TechConnect Briefs 2018 - Informatics, Electronics and Microsystems
Editors	Matthew Laudon, Fiona Case, Bart Romanowicz, Fiona Case
Publisher	TechConnect
Pages	24-27
Number of pages	4
Volume	4
ISBN (Electronic)	9780998878256
Publication status	Published - 2018 Jan 1
Event	11th Annual TechConnect World Innovation Conference and Expo, Held Jointly with the 20th Annual Nanotech Conference and Expo,the 2018 SBIR/STTR Spring Innovation Conference, and the Defense TechConnect DTC Spring Conference - Anaheim, United States Duration: 2018 May 13 → 2018 May 16

Other

Other	11th Annual TechConnect World Innovation Conference and Expo, Held Jointly with the 20th Annual Nanotech Conference and Expo,the 2018 SBIR/STTR Spring Innovation Conference, and the Defense TechConnect DTC Spring Conference
Country	United States
City	Anaheim
Period	18/5/13 → 18/5/16

Keywords

Breakdown voltage
Buffer latyer
Deep acceptor
GaN HEMT
High-k passivation layer

ASJC Scopus subject areas

Materials Science(all)

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Ueda, S., Kawada, Y., & Horio, K. (2018). Effect of deep-acceptor density in buffer layer on breakdown voltage of AIGaN/GaN HEMTs with high-k passivation layer. In M. Laudon, F. Case, B. Romanowicz, & F. Case (Eds.), TechConnect Briefs 2018 - Informatics, Electronics and Microsystems (Vol. 4, pp. 24-27). TechConnect.

Effect of deep-acceptor density in buffer layer on breakdown voltage of AIGaN/GaN HEMTs with high-k passivation layer. / Ueda, S.; Kawada, Y.; Horio, Kazushige.

TechConnect Briefs 2018 - Informatics, Electronics and Microsystems. ed. / Matthew Laudon; Fiona Case; Bart Romanowicz; Fiona Case. Vol. 4 TechConnect, 2018. p. 24-27.

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Ueda, S, Kawada, Y & Horio, K 2018, Effect of deep-acceptor density in buffer layer on breakdown voltage of AIGaN/GaN HEMTs with high-k passivation layer. in M Laudon, F Case, B Romanowicz & F Case (eds), TechConnect Briefs 2018 - Informatics, Electronics and Microsystems. vol. 4, TechConnect, pp. 24-27, 11th Annual TechConnect World Innovation Conference and Expo, Held Jointly with the 20th Annual Nanotech Conference and Expo,the 2018 SBIR/STTR Spring Innovation Conference, and the Defense TechConnect DTC Spring Conference, Anaheim, United States, 18/5/13.

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abstract = "We make a numerical analysis of breakdown characteristics of AIGaN/GaN HEMTs with a high-k passivation layer, where a deep acceptor above the midgap is considered in a buffer layer and its density NDA is varied between 1017 and 3×l017 cm-3. It is shown that, generally, the breakdown voltage Vbr becomes higher when the relative permittivity of the passivation layer ϵr is higher. In the case where NDA is relatively low, Vbr is determined by impact ionization of carriers when ϵτ, is low, but it becomes determined by buffer leakage current when ϵτ is high, and Vbr becomes saturated with increasing ϵr. On the other hand, when Nda is relatively high, Vbr is determined by impact ionization of carriers even if ϵτ becomes 60, and it becomes about 500 V at the gate-to-drain distance of 1.5 μm, which corresponds to an average electric field of over 3 MV/cm.",

keywords = "Breakdown voltage, Buffer latyer, Deep acceptor, GaN HEMT, High-k passivation layer",

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N2 - We make a numerical analysis of breakdown characteristics of AIGaN/GaN HEMTs with a high-k passivation layer, where a deep acceptor above the midgap is considered in a buffer layer and its density NDA is varied between 1017 and 3×l017 cm-3. It is shown that, generally, the breakdown voltage Vbr becomes higher when the relative permittivity of the passivation layer ϵr is higher. In the case where NDA is relatively low, Vbr is determined by impact ionization of carriers when ϵτ, is low, but it becomes determined by buffer leakage current when ϵτ is high, and Vbr becomes saturated with increasing ϵr. On the other hand, when Nda is relatively high, Vbr is determined by impact ionization of carriers even if ϵτ becomes 60, and it becomes about 500 V at the gate-to-drain distance of 1.5 μm, which corresponds to an average electric field of over 3 MV/cm.

AB - We make a numerical analysis of breakdown characteristics of AIGaN/GaN HEMTs with a high-k passivation layer, where a deep acceptor above the midgap is considered in a buffer layer and its density NDA is varied between 1017 and 3×l017 cm-3. It is shown that, generally, the breakdown voltage Vbr becomes higher when the relative permittivity of the passivation layer ϵr is higher. In the case where NDA is relatively low, Vbr is determined by impact ionization of carriers when ϵτ, is low, but it becomes determined by buffer leakage current when ϵτ is high, and Vbr becomes saturated with increasing ϵr. On the other hand, when Nda is relatively high, Vbr is determined by impact ionization of carriers even if ϵτ becomes 60, and it becomes about 500 V at the gate-to-drain distance of 1.5 μm, which corresponds to an average electric field of over 3 MV/cm.

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