Effect of dynamic precursor gas pressure on growth behavior of amorphous Si-C-O nanorods by electron beam-induced deposition

Wei Zhang, Masayuki Shimojo, Kazuo Furuya

Research output: Contribution to journalArticle

4 Citations (Scopus)

Abstract

The effects of dynamic precursor gas pressure on growth behavior of amorphous Si-C-O nanorods and electron beam scanned speed by electron beam-induced deposition (EBID) process were investigated. The EBID experiment was carried out in a 30 kV field emission gun scanning electron microscope, where the electron beam current was about 0.8 nA with a beam diameter of 4 nm. A 300 kV JEM-3000F field-emission gun transmission electron microscope, attached with a post-column Gatan imaging filter and CCD camera, was employed to characterize the deposits by a high-resolution transmission electron microscopy (HRTEM) and energy-filtered transmission electron microscopy (EFTEM). Experimental investigation showed that the nanorod width remains constant with the dynamic reduction of precursor gas pressure.

Original languageEnglish
Pages (from-to)2069-2071
Number of pages3
JournalJournal of Materials Science
Volume43
Issue number6
DOIs
Publication statusPublished - 2008 Mar
Externally publishedYes

Fingerprint

dynamic pressure
Nanorods
nanorods
gas pressure
Electron beams
Gases
electron beams
Field emission
field emission
Electron microscopes
electron microscopes
transmission electron microscopy
CCD cameras
High resolution transmission electron microscopy
beam currents
Deposits
deposits
cameras
electron energy
Transmission electron microscopy

ASJC Scopus subject areas

  • Materials Science(all)
  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics

Cite this

Effect of dynamic precursor gas pressure on growth behavior of amorphous Si-C-O nanorods by electron beam-induced deposition. / Zhang, Wei; Shimojo, Masayuki; Furuya, Kazuo.

In: Journal of Materials Science, Vol. 43, No. 6, 03.2008, p. 2069-2071.

Research output: Contribution to journalArticle

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