Effect of gold layer thickness on the low-temperature crystallization process of germanium thin films by gold-induced crystallization

Narin Sunthornpan, Kohtaroh Tauchi, Nairu Tezuka, Kentaro Kyuno

Research output: Contribution to journalArticlepeer-review

Abstract

The effect of Au layer thickness (1, 2.5, 5, 7.5 and 10 nm) on the low-temperature crystallization of Ge thin films (30 nm) was examined. It is found that the best Ge crystallinity is achieved at an Au layer thickness of 2.5 nm. This finding will open up the possibility to reduce the amount of Au consumption in the low-temperature crystallization process of Ge thin films.

Original languageEnglish
Article number080904
JournalJapanese Journal of Applied Physics
Volume59
Issue number8
DOIs
Publication statusPublished - 2020 Aug 1

ASJC Scopus subject areas

  • Engineering(all)
  • Physics and Astronomy(all)

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