Effect of grain size on Bi4Ti3O12 thin film properties

Masaki Yamaguchi, Takao Nagatomo

Research output: Contribution to journalArticle

30 Citations (Scopus)

Abstract

Bismuth titanate (Bi4Ti3O12) thin films with a c-axis orientation were prepared on (100) silicon wafers by rf magnetron sputtering. The average grain size and the c-axis lattice constant depend on the substrate temperature. The c-axis lattice constant was decreased with increasing grain size. The leakage current characteristics of the Bi4Ti3O12 thin film consisting of small grains with a closely packed structure, are superior to those of others. The apparent remanent polarization and the apparent coercive field of the film with small grain sizes were estimated to be 2.4 μC·cm-2 and 2.3 kV·cm-1, respectively. The refractive index dispersion characteristics for the film show that the large grains increase the distortion of the oxygen-octahedra. Consequently, this result indicates that the small grain size of Bi4Ti3O12 thin films can improve the ferroelectric properties.

Original languageEnglish
Pages (from-to)5166-5170
Number of pages5
JournalJapanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
Volume37
Issue number9 PART B
Publication statusPublished - 1998 Sep

Fingerprint

grain size
Thin films
Lattice constants
thin films
Remanence
Bismuth
Silicon wafers
Leakage currents
Magnetron sputtering
Ferroelectric materials
Refractive index
bismuth
magnetron sputtering
Oxygen
leakage
wafers
Substrates
refractivity
silicon
oxygen

Keywords

  • Bismuth titanate
  • Ferroelectricity
  • Grain size
  • Silicon
  • Thin films

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)
  • Engineering(all)

Cite this

Effect of grain size on Bi4Ti3O12 thin film properties. / Yamaguchi, Masaki; Nagatomo, Takao.

In: Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, Vol. 37, No. 9 PART B, 09.1998, p. 5166-5170.

Research output: Contribution to journalArticle

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