Effect of high-temperature treatment on optical-absorption bands in amorphous SiO2

Nobuyuki Dohguchi, Shuji Munekuni, Hiroyuki Nishikawa, Yoshimichi Ohki, Kaya Nagasawa

Research output: Contribution to journalArticle

3 Citations (Scopus)

Abstract

The intensity change in optical absorption at 3.8, 5.0, and 5.8 eV was measured for thermal treatment up to 1000 °C done on silica glass samples manufactured by various methods. It was found that these absorption bands change differently with heat, depending on the synthesis process of the sample. The 3.8-eV absorption band due to peroxy linkage is found to increase with high-temperature treatment when the sample contains dissolved oxygen molecules within the sample. For the sample with no oxygen molecules, high- temperaturetreatment does not alter the absorption intensity at 3.8 eV. The 5.0-eV absorption band is found to decrease by high-temperature treatment. In the case of an oxygen-containingsample, the reaction of oxygen molecules with oxygen vacancy sites is a cause of this decrease. The 5.1-eV band, which was thought to have no temperature dependence, is found to be annealed at a temperature region around 950 °C.

Original languageEnglish
Pages (from-to)2788-2790
Number of pages3
JournalJournal of Applied Physics
Volume70
Issue number5
DOIs
Publication statusPublished - 1991
Externally publishedYes

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optical absorption
absorption spectra
oxygen
molecules
silica glass
linkages
heat
temperature dependence
causes
synthesis
temperature

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Cite this

Effect of high-temperature treatment on optical-absorption bands in amorphous SiO2. / Dohguchi, Nobuyuki; Munekuni, Shuji; Nishikawa, Hiroyuki; Ohki, Yoshimichi; Nagasawa, Kaya.

In: Journal of Applied Physics, Vol. 70, No. 5, 1991, p. 2788-2790.

Research output: Contribution to journalArticle

Dohguchi, Nobuyuki ; Munekuni, Shuji ; Nishikawa, Hiroyuki ; Ohki, Yoshimichi ; Nagasawa, Kaya. / Effect of high-temperature treatment on optical-absorption bands in amorphous SiO2. In: Journal of Applied Physics. 1991 ; Vol. 70, No. 5. pp. 2788-2790.
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