Effect of implanted ion species on the decay kinetics of 2.7 eV photoluminescence in thermal SiO2 films

Kwang Soo Seol, Yoshimichi Ohki, Hiroyuki Nishikawa, Makoto Takiyama, Yoshimasa Hama

Research output: Contribution to journalArticle

48 Citations (Scopus)

Abstract

Decay kinetics of photoluminescence (PL) existing around 2.7 eV has been studied in various ion-implanted thermal SiO2 films as a function of implantation conditions. The PL observed in many samples shows decay constants shorter than 10 ms, which is a well-observed decay constant for silica glass. The change in the decay constant and that in the PL intensity have been found to be systematically related with the mass and the dose of the implanted ions. Therefore, despite the short decay constant, the present 2.7 eV PL is attributable to a triplet-to-singlet transition of oxygen deficient centers, as in the case of silica glass. The rapid decay is interpreted as the increase in spin-orbit coupling interaction due to structural deformations by ion implantation such as the formation of paramagnetic defects and/or densification.

Original languageEnglish
Pages (from-to)6444-6447
Number of pages4
JournalJournal of Applied Physics
Volume80
Issue number11
Publication statusPublished - 1996 Dec 1
Externally publishedYes

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photoluminescence
kinetics
decay
ions
silica glass
densification
ion implantation
implantation
orbits
dosage
defects
oxygen
interactions

ASJC Scopus subject areas

  • Physics and Astronomy(all)
  • Physics and Astronomy (miscellaneous)

Cite this

Effect of implanted ion species on the decay kinetics of 2.7 eV photoluminescence in thermal SiO2 films. / Seol, Kwang Soo; Ohki, Yoshimichi; Nishikawa, Hiroyuki; Takiyama, Makoto; Hama, Yoshimasa.

In: Journal of Applied Physics, Vol. 80, No. 11, 01.12.1996, p. 6444-6447.

Research output: Contribution to journalArticle

Seol, Kwang Soo ; Ohki, Yoshimichi ; Nishikawa, Hiroyuki ; Takiyama, Makoto ; Hama, Yoshimasa. / Effect of implanted ion species on the decay kinetics of 2.7 eV photoluminescence in thermal SiO2 films. In: Journal of Applied Physics. 1996 ; Vol. 80, No. 11. pp. 6444-6447.
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