Effect of oxygen disorder on superconductivity-induced self-energy effects in impurity-free YBa2Cu3O7-δ

V. G. Hadjiev, C. Thomsrn, A. Erb, G. Müller-Vogt, Michael Rudolf Koblischka, M. Cardona

Research output: Contribution to journalArticle

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Abstract

We investigated various areas of impurity-free YBa2Cu3O7-δ single crystals with Raman spectroscopy. A definite correlation between the appearance of the group- theoretically forbidden chain-related Raman lines at 232 and 598 cm-1 and the superconductivity-induced self-energy effects observed for the 340 cm-1 B1g-like mode was established: Disorder in the chains in pure crystals has a similar effect as the introduction of impurity atoms, both leading to an increased gap value for 2Δ/kTc as deduced from the phonon self-energy effects. The absence of the forbidden chain modes in the Raman spectra may be used as an extremely sensitive quality criterion of impurity-free crystals.

Original languageEnglish
Pages (from-to)643-647
Number of pages5
JournalSolid State Communications
Volume80
Issue number8
DOIs
Publication statusPublished - 1991 Jan 1
Externally publishedYes

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Superconductivity
superconductivity
disorders
Impurities
Oxygen
impurities
oxygen
Crystals
crystals
Raman spectroscopy
energy
Raman scattering
Single crystals
Raman spectra
Atoms
single crystals
atoms
barium copper yttrium oxide

ASJC Scopus subject areas

  • Chemistry(all)
  • Condensed Matter Physics
  • Materials Chemistry

Cite this

Effect of oxygen disorder on superconductivity-induced self-energy effects in impurity-free YBa2Cu3O7-δ. / Hadjiev, V. G.; Thomsrn, C.; Erb, A.; Müller-Vogt, G.; Koblischka, Michael Rudolf; Cardona, M.

In: Solid State Communications, Vol. 80, No. 8, 01.01.1991, p. 643-647.

Research output: Contribution to journalArticle

Hadjiev, V. G. ; Thomsrn, C. ; Erb, A. ; Müller-Vogt, G. ; Koblischka, Michael Rudolf ; Cardona, M. / Effect of oxygen disorder on superconductivity-induced self-energy effects in impurity-free YBa2Cu3O7-δ. In: Solid State Communications. 1991 ; Vol. 80, No. 8. pp. 643-647.
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