Effect of Oxygen Pressure on Thermoelectric Properties of p-Type CuAlO2 Films Fabricated by Pulsed Laser Deposition

Shrikant Saini, Paolo Mele, Shunsuke Osugi, Malik I. Adam

Research output: Contribution to journalArticle

Abstract

We focus on the growth of p-type CuAlO2 thin films and its thermoelectric properties. Thin films are deposited by pulsed laser deposition technique on single-crystal sapphire substrates varying the oxygen partial pressure. Thin film deposited at oxygen partial pressure of 200 mTorr presents bigger grains (about 10 μm in size) and shows Seebeck coefficient as high as 270 µV/K with a conductivity of about 0.8 S/cm so that its power factor is about 5.7 µW/mK2 at 800 K, twice than observed in the film deposited at 60 mTorr of oxygen.

Original languageEnglish
JournalJournal of Materials Engineering and Performance
DOIs
Publication statusAccepted/In press - 2018 Jan 1

Fingerprint

Pulsed laser deposition
Oxygen
Thin films
Partial pressure
Seebeck coefficient
Aluminum Oxide
Sapphire
Single crystals
Substrates
CuAlO(2)

Keywords

  • CuAlO
  • heat harvesting
  • oxides
  • pulsed laser deposition
  • thermoelectrics
  • thin films

ASJC Scopus subject areas

  • Materials Science(all)
  • Mechanics of Materials
  • Mechanical Engineering

Cite this

Effect of Oxygen Pressure on Thermoelectric Properties of p-Type CuAlO2 Films Fabricated by Pulsed Laser Deposition. / Saini, Shrikant; Mele, Paolo; Osugi, Shunsuke; Adam, Malik I.

In: Journal of Materials Engineering and Performance, 01.01.2018.

Research output: Contribution to journalArticle

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