Effect of pulse bias voltage and nitrogen pressure on nitrogen distribution in steel substrate by plasma immersion ion implantation of nitrogen

Atsusshi Mitsuo, S. Uchida, T. Aizawa

Research output: Contribution to journalArticle

21 Citations (Scopus)

Abstract

Nitrogen ions were implanted into low carbon steel under various pulse bias voltage and pressure in order to investigate nitrogen distribution by using a plasma immersion ion implantation (PIII). A beam-line implanter was also utilized to compare the implanted nitrogen distribution between two approaches. The nitrogen-implanted surface was characterized by X-ray diffractometer (XRD) for identification of in-situ synthesized nitride. Auger electron spectroscopy (AES) was used to determine the depth profile of the implanted nitrogen. Substrate temperature was estimated from the hardness of tool steel substrate treated simultaneously. Formation of Fe3N and Fe4N were recognized in the near-surface region of the substrate. Nitrogen concentration reached 25-30 mol% at the surface, and reduced with increasing depth. Nitrogen-affected region became deeper with bias voltage and nitrogen pressure. Maximum distribution depth of nitrogen correlated with the bias voltage and the substrate temperature.

Original languageEnglish
Pages (from-to)196-199
Number of pages4
JournalSurface and Coatings Technology
Volume186
Issue number1-2 SPEC. ISS.
DOIs
Publication statusPublished - 2004 Aug 2
Externally publishedYes

Fingerprint

Steel
Bias voltage
Ion implantation
submerging
ion implantation
Nitrogen
steels
Plasmas
nitrogen
electric potential
Substrates
pulses
low carbon steels
nitrogen ions
Tool steel
diffractometers
Diffractometers
Low carbon steel
Auger electron spectroscopy
Auger spectroscopy

Keywords

  • Auger electron spectroscopy
  • Depth distribution
  • Low carbon steel
  • Nitriding
  • Plasma immersion ion implantation
  • Thermal diffusion

ASJC Scopus subject areas

  • Surfaces, Coatings and Films
  • Condensed Matter Physics
  • Surfaces and Interfaces

Cite this

Effect of pulse bias voltage and nitrogen pressure on nitrogen distribution in steel substrate by plasma immersion ion implantation of nitrogen. / Mitsuo, Atsusshi; Uchida, S.; Aizawa, T.

In: Surface and Coatings Technology, Vol. 186, No. 1-2 SPEC. ISS., 02.08.2004, p. 196-199.

Research output: Contribution to journalArticle

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abstract = "Nitrogen ions were implanted into low carbon steel under various pulse bias voltage and pressure in order to investigate nitrogen distribution by using a plasma immersion ion implantation (PIII). A beam-line implanter was also utilized to compare the implanted nitrogen distribution between two approaches. The nitrogen-implanted surface was characterized by X-ray diffractometer (XRD) for identification of in-situ synthesized nitride. Auger electron spectroscopy (AES) was used to determine the depth profile of the implanted nitrogen. Substrate temperature was estimated from the hardness of tool steel substrate treated simultaneously. Formation of Fe3N and Fe4N were recognized in the near-surface region of the substrate. Nitrogen concentration reached 25-30 mol{\%} at the surface, and reduced with increasing depth. Nitrogen-affected region became deeper with bias voltage and nitrogen pressure. Maximum distribution depth of nitrogen correlated with the bias voltage and the substrate temperature.",
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AB - Nitrogen ions were implanted into low carbon steel under various pulse bias voltage and pressure in order to investigate nitrogen distribution by using a plasma immersion ion implantation (PIII). A beam-line implanter was also utilized to compare the implanted nitrogen distribution between two approaches. The nitrogen-implanted surface was characterized by X-ray diffractometer (XRD) for identification of in-situ synthesized nitride. Auger electron spectroscopy (AES) was used to determine the depth profile of the implanted nitrogen. Substrate temperature was estimated from the hardness of tool steel substrate treated simultaneously. Formation of Fe3N and Fe4N were recognized in the near-surface region of the substrate. Nitrogen concentration reached 25-30 mol% at the surface, and reduced with increasing depth. Nitrogen-affected region became deeper with bias voltage and nitrogen pressure. Maximum distribution depth of nitrogen correlated with the bias voltage and the substrate temperature.

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